Method for fabricating insulated gate semiconductor device

Claim 1

A method for fabricating an insulated gate semiconductor device comprising the steps of: selectively forming at least one insulated gate on the surface of a semiconductor layer of one conductivity type, each said insulated gate consisting of three layers of a gate oxide film, a gate electrode and an insulating film, with the gate electrode between the gate oxide film and the insulating film; after said selectively forming said at least one insulated gate having said gate oxide film, said gate electrode and the insulating film, forming well layers of the other conductivity type in the semiconductor layer using the insulated gate as a mask, said well layers each having a higher impurity concentration than that of the semiconductor layer; forming, only on the side walls of the insulated gate, insulator films doped with impurities of the one conductivity type; diffusing the impurities from the insulator films doped with the one conductivity type impurities into the well layers to form source layers having the one conductivity type and a higher impurity concentration than that of the well layers; and forming a source electrode in ohmic contact with exposed portions of the source layers and the well layers, and extending over the at least one insulated gate.

Claim 2

A method for fabricating an insulated gate semiconductor device comprising the steps of: selectively forming at least one insulated gate on the surface of a semiconductor layer of one conductivity type, each said insulated gate consisting of three layers of a gate oxide film, a gate electrode and an insulating film, with the gate electrode between the gate oxide film and the insulating film; after said selectively forming said at least one insulated gate having said gate oxide film, said gate electrode and the insulating film, forming well layers of the other conductivity type in the semiconductor layer using the insulated gate as a mask, said well layers each having a higher impurity concentration than that of the semiconductor layer; forming, only on the side walls of the insulated gate, insulator films doped with impurities of the one conductivity type; diffusing the impurities from the insulator films doped with the one conductivity type impurities into the well layers to form source layers having the one conductivity type and a higher impurity concentration than that of the well layers; and forming a source electrode in ohmic contact with exposed portions of the source layers and the well layers, and extending over the at least one insulated gate.

Claim 9

A method for fabricating an insulated gate semiconductor device comprising the steps of: selectively forming at least one insulated gate on the surface of a semiconductor layer of one conductivity type, each said insulated gate consisting of three layers of a gate oxide film, a gate electrode and an insulating film, with the gate electrode between the gate oxide film and the insulating film; after said selectively forming said at least one insulated gate having said gate oxide film, said gate electrode and said insulating film, forming well layers of the other conductivity type in the semiconductor layer using the insulated gate as a mask, said well layers each having a higher impurity concentration than that of the semiconductor layer; forming doped films through an insulator film located on the side walls of the insulated gate, said doped films being formed only through the insulator film located on the sidewalls of the insulated gate, said doped films doped with impurities of the one conductivity type; diffusing the impurities from the doped films into the well layers to form source layers having the one conductivity type and a higher impurity concentration than that of the well layers; and forming a source electrode in ohmic contact with exposed portions of the source layers and the well layers, and extending over the at least one insulated gate.

Claim 10

A method for fabricating an insulated gate semiconductor device comprising the steps of: selectively forming at least one insulated gate on the surface of a semiconductor layer of one conductivity type, each said insulated gate consisting of three layers of a gate oxide film, a gate electrode and an insulating film, with the gate electrode between the gate oxide film and the insulating film; after said selectively forming said at least one insulated gate having said gate oxide film, said gate electrode and said insulating film, forming well layers of the other conductivity type in the semiconductor layer using the insulated gate as a mask, said well layers each having a higher impurity concentration than that of the semiconductor layer; forming doped films through an insulator film located on the side walls of the insulated gate, said doped films being formed only through the insulator film located on the sidewalls of the insulated gate, said doped films doped with impurities of the one conductivity type; diffusing the impurities from the doped films into the well layers to form source layers having the one conductivity type and a higher impurity concentration than that of the well layers; and forming a source electrode in ohmic contact with exposed portions of the source layers and the well layers, and extending over the at least one insulated gate.

Claim 12

A method for fabricating an insulated gate semiconductor device comprising the steps of: forming a plurality of insulated gates, each consisting of three layers of a gate oxide film, a gate electrode and an insulating film, at predetermined intervals on the surface of a semiconductor layer of one conductivity type; after forming said plurality of insulated gates having said gate oxide film, said gate electrode and said insulating film, forming a plurality of well layers of the other conductivity type in the semiconductor layer using the insulated gates as masks, said well layers each having a higher impurity concentration than that of the semiconductor layer; forming a doped film on the entire surface of the insulated gates and the well layers; removing said doped film by anisotropic-dry-etching so that remaining doped films are left on only the side walls of the insulated gates in regions between the insulated gates; diffusing the impurities from the remaining doped films on the side walls of the insulated gates into the well layers to form source layers each having the one conductivity type and a higher concentration than that of the well layers; removing the remaining doped films from the side walls of the insulated gates; forming insulator films on the side walls of the insulated gates; and forming a source electrode kept in ohmic contact with the exposed portions of the source layers and the well layers and extended over the insulated gates.

Claim 13

A method for fabricating an insulated gate semiconductor device comprising the steps of: forming a plurality of insulated gates, each consisting of three layers of a gate oxide film, a gate electrode and an insulating film, at predetermined intervals on the surface of a semiconductor layer of one conductivity type; after forming said plurality of insulated gates having said gate oxide film, said gate electrode and said insulating film, forming a plurality of well layers of the other conductivity type in the semiconductor layer using the insulated gates as masks, said well layers each having a higher impurity concentration than that of the semiconductor layer; forming a doped film on the entire surface of the insulated gates and the well layers; removing said doped film by anisotropic-dry-etching so that remaining doped films are left on only the side walls of the insulated gates in regions between the insulated gates; diffusing the impurities from the remaining doped films on the side walls of the insulated gates into the well layers to form source layers each having the one conductivity type and a higher concentration than that of the well layers; removing the remaining doped films from the side walls of the insulated gates; forming insulator films on the side walls of the insulated gates; and forming a source electrode kept in ohmic contact with the exposed portions of the source layers and the well layers and extended over the insulated gates.

Claim 16

A method for fabricating insulated gate semiconductor devices comprising the steps of: forming a plurality of insulated gates, each consisting of three layers of a gate oxide film, a gate electrode and an insulating film, at predetermined intervals on the surface of a semiconductor layer of one conductivity type; after forming the insulated gates having the gate oxide film, the gate electrode and the insulating film, forming well layers of the other conductivity type in the semiconductor layer using the insulated gates as masks, said well layers each having a higher impurity concentration than that of the semiconductor layer; forming, only on the side walls of each of the insulated gates in regions between the insulated gates, insulators doped with impurities of the one conductivity type; diffusing the impurities from the insulators doped with the one conductivity type impurities into the well layers to form source layers each having the one conductivity type and a higher concentration than that of the well layers; and forming a source electrode kept in ohmic contact with the exposed portions of the source layers and the well layers and extended over the insulated gates.

Claim 17

A method for fabricating insulated gate semiconductor devices comprising the steps of: forming a plurality of insulated gates, each consisting of three layers of a gate oxide film, a gate electrode and an insulating film, at predetermined intervals on the surface of a semiconductor layer of one conductivity type; after forming the insulated gates having the gate oxide film, the gate electrode and the insulating film, forming well layers of the other conductivity type in the semiconductor layer using the insulated gates as masks, said well layers each having a higher impurity concentration than that of the semiconductor layer; forming, only on the side walls of each of the insulated gates in regions between the insulated gates, insulators doped with impurities of the one conductivity type; diffusing the impurities from the insulators doped with the one conductivity type impurities into the well layers to form source layers each having the one conductivity type and a higher concentration than that of the well layers; and forming a source electrode kept in ohmic contact with the exposed portions of the source layers and the well layers and extended over the insulated gates.

Claim 18

A method for fabricating insulated gate semiconductor devices comprising the steps of: forming a plurality of insulated gates, each consisting of three layers of a gate oxide film, a gate electrode and an insulating film, at predetermined intervals on the surface of a semiconductor layer of one conductivity type; after forming the plurality of insulated gates having the gate oxide film, the gate electrode and the insulating film, forming well layers of the other conductivity type in the semiconductor layer using the insulated gates as masks, said well layers each having a higher impurity concentration than that of the semiconductor layer; forming, only on an insulator film located on the side walls of each of the insulated gates, films doped with impurities of the one conductivity type; diffusing the impurities from the films doped with the one conductivity type impurities into the well layers to form source layers each having the one conductivity type and a higher concentration than that of the well layers; and forming a source electrode kept in ohmic contact with exposed portions of the source layers and the well layers and extended over the insulated gates.

Claim 19

A method for fabricating insulated gate semiconductor devices comprising the steps of: forming a plurality of insulated gates, each consisting of three layers of a gate oxide film, a gate electrode and an insulating film, at predetermined intervals on the surface of a semiconductor layer of one conductivity type; after forming the plurality of insulated gates having the gate oxide film, the gate electrode and the insulating film, forming well layers of the other conductivity type in the semiconductor layer using the insulated gates as masks, said well layers each having a higher impurity concentration than that of the semiconductor layer; forming, only on an insulator film located on the side walls of each of the insulated gates, films doped with impurities of the one conductivity type; diffusing the impurities from the films doped with the one conductivity type impurities into the well layers to form source layers each having the one conductivity type and a higher concentration than that of the well layers; and forming a source electrode kept in ohmic contact with exposed portions of the source layers and the well layers and extended over the insulated gates.

Claim 20

A method for fabricating an insulated gate semiconductor device comprising the steps of: forming a plurality of insulated gates, each consisting of three layers of a gate oxide film, a gate electrode and an insulating film, at predetermined intervals on the surface of a semiconductor layer of one conductivity type, with the gate electrode between the gate oxide film and the insulating film; after forming the insulated gates having the gate oxide film, the gate electrode and the insulating film, forming a plurality of well layers of the other conductivity type in the semiconductor layer using the insulated gates as masks, said well layers each having a higher impurity concentration than that of the semiconductor layer; forming a doped insulator on the entire surface of the insulated gates and the well layers; removing said doped insulator by anisotropic-dry-etching so that a remaining portion is left on only the side walls of the insulated gates in regions between the insulated gates; diffusing the impurities from the remaining portion of the doped insulator on the side walls of the insulated gates, into the well layers to form source layers each having the one conductivity type and a higher concentration than that of the well layers; and forming a source electrode in ohmic contact with exposed portions of the source layers and the well layers, and extending over the insulated gates.

Claim 21

A method for fabricating an insulated gate semiconductor device comprising the steps of: forming a plurality of insulated gates, each consisting of three layers of a gate oxide film, a gate electrode and an insulating film, at predetermined intervals on the surface of a semiconductor layer of one conductivity type, with the gate electrode between the gate oxide film and the insulating film; after forming the insulated gates having the gate oxide film, the gate electrode and the insulating film, forming a plurality of well layers of the other conductivity type in the semiconductor layer using the insulated gates as masks, said well layers each having a higher impurity concentration than that of the semiconductor layer; forming a doped insulator on the entire surface of the insulated gates and the well layers; removing said doped insulator by anisotropic-dry-etching so that a remaining portion is left on only the side walls of the insulated gates in regions between the insulated gates; diffusing the impurities from the remaining portion of the doped insulator on the side walls of the insulated gates, into the well layers to form source layers each having the one conductivity type and a higher concentration than that of the well layers; and forming a source electrode in ohmic contact with exposed portions of the source layers and the well layers, and extending over the insulated gates.

Claim 23

A method for fabricating an insulated gate semiconductor device comprising the steps of: forming a plurality of insulated gates, each consisting of three layers of a gate oxide film, a gate electrode and an insulating film, at predetermined intervals on the surface of a semiconductor layer of one conductivity type, with the gate electrode between the gate oxide film and the insulating film; after forming the insulated gates having the gate oxide film, the gate electrode and the insulating film, forming a plurality of well layers of the other conductivity type in the semiconductor layer using the insulated gates as masks, said well layers each having a higher impurity concentration than that of the semiconductor layer; forming an insulating film on the entire surface of the insulated gates and the well layers; removing said insulating film by anisotropic-dry-etching so that a remaining portion thereof is left on only the side walls of the insulated gates; forming a doped film on the entire surface of the insulated gates and well layers; removing said doped film by anisotropic-dry-etching so that a remaining portion of the doped film is left on only the side walls of the insulated gates in regions between the insulated gates; diffusing the impurities from the remaining portion of the doped film on the side walls of the insulated gates into the well layers to form source layers each having the one conductivity type and a higher concentration than that of the well layers; and forming a source electrode in ohmic contact with exposed portions of the source layers and the well layers, and extending over the insulated gates.

Claim 24

A method for fabricating an insulated gate semiconductor device comprising the steps of: forming a plurality of insulated gates, each consisting of three layers of a gate oxide film, a gate electrode and an insulating film, at predetermined intervals on the surface of a semiconductor layer of one conductivity type, with the gate electrode between the gate oxide film and the insulating film; after forming the insulated gates having the gate oxide film, the gate electrode and the insulating film, forming a plurality of well layers of the other conductivity type in the semiconductor layer using the insulated gates as masks, said well layers each having a higher impurity concentration than that of the semiconductor layer; forming an insulating film on the entire surface of the insulated gates and the well layers; removing said insulating film by anisotropic-dry-etching so that a remaining portion thereof is left on only the side walls of the insulated gates; forming a doped film on the entire surface of the insulated gates and well layers; removing said doped film by anisotropic-dry-etching so that a remaining portion of the doped film is left on only the side walls of the insulated gates in regions between the insulated gates; diffusing the impurities from the remaining portion of the doped film on the side walls of the insulated gates into the well layers to form source layers each having the one conductivity type and a higher concentration than that of the well layers; and forming a source electrode in ohmic contact with exposed portions of the source layers and the well layers, and extending over the insulated gates.

Claim 26

A method for fabricating an insulated gate semiconductor device comprising the steps of: forming a plurality of insulated gates, each consisting of three layers of a gate oxide film, a gate electrode and an insulating film, at predetermined intervals on the surface of a semiconductor layer of one conductivity type; after forming the insulated gates having the gate oxide film, the gate electrode and the insulating film, forming a plurality of well layers of the other conductivity type in the semiconductor layer using the insulated gates as masks, said well layers each having a higher impurity concentration than that of the semiconductor layer; forming an insulator film on the entire surface of the insulated gates and the well layers; removing said insulator film by anisotropic-dry-etching so that it is left on only the side walls of the insulated gates; forming a doped film on the entire surface of the insulated gates and the well layers; removing said doped film by anisotropic-dry-etching so that a remaining portion of the doped film is left on only the side walls of the insulated gates; diffusing the impurities from the remaining portion of the doped film, on the side walls of the insulated gates, into the well layers to form source layers each having the one conductivity type and a higher concentration than that of the well layers; and forming a source electrode kept in ohmic contact with exposed portions o the source layers and the well layers and extended over the insulated gates.

Claim 27

A method for fabricating an insulated gate semiconductor device comprising the steps of: forming a plurality of insulated gates, each consisting of three layers of a gate oxide film, a gate electrode and an insulating film, at predetermined intervals on the surface of a semiconductor layer of one conductivity type; after forming the insulated gates having the gate oxide film, the gate electrode and the insulating film, forming a plurality of well layers of the other conductivity type in the semiconductor layer using the insulated gates as masks, said well layers each having a higher impurity concentration than that of the semiconductor layer; forming an insulator film on the entire surface of the insulated gates and the well layers; removing said insulator film by anisotropic-dry-etching so that it is left on only the side walls of the insulated gates; forming a doped film on the entire surface of the insulated gates and the well layers; removing said doped film by anisotropic-dry-etching so that a remaining portion of the doped film is left on only the side walls of the insulated gates; diffusing the impurities from the remaining portion of the doped film, on the side walls of the insulated gates, into the well layers to form source layers each having the one conductivity type and a higher concentration than that of the well layers; and forming a source electrode kept in ohmic contact with exposed portions o the source layers and the well layers and extended over the insulated gates.

Claim 28

A method for fabricating an insulated gate semiconductor device comprising the steps of: selectively forming at least one insulated gate on the surface of a semiconductor layer of one conductivity type, each said insulated gate consisting of three layers of a gate oxide film, a gate electrode and an insulating film; after forming the at least one insulated gate having the gate oxide film, the gate electrode and the insulating film, forming well layers of the other conductivity type in the semiconductor layer, said well layers being formed in self-alignment with said insulated gate, said well layers each having a higher impurity concentration than that of the semiconductor layer; forming, only on the side walls of the insulated gate, insulator films doped with impurities of the one conductivity type; diffusing the impurities from the insulator films doped with the one conductivity type impurities into the well layers to form source layers having the one conductivity type and a higher impurity concentration than that of the well layers; and forming a source electrode in ohmic contact with exposed portions of the source layers and the well layers, and extending over the at least one insulated gate.

Claim 29

A method for fabricating an insulated gate semiconductor device comprising the steps of: selectively forming at least one insulated gate on the surface of a semiconductor layer of one conductivity type, each said insulated gate consisting of three layers of a gate oxide film, a gate electrode and an insulating film; after forming the at least one insulated gate having the gate oxide film, the gate electrode and the insulating film, forming well layers of the other conductivity type in the semiconductor layer, said well layers being formed in self-alignment with said insulated gate, said well layers each having a higher impurity concentration than that of the semiconductor layer; forming, only on the side walls of the insulated gate, insulator films doped with impurities of the one conductivity type; diffusing the impurities from the insulator films doped with the one conductivity type impurities into the well layers to form source layers having the one conductivity type and a higher impurity concentration than that of the well layers; and forming a source electrode in ohmic contact with exposed portions of the source layers and the well layers, and extending over the at least one insulated gate.

Claim 30

A method for fabricating an insulated gate semiconductor device comprising the steps of: selectively forming at least one insulated gate on the surface of a semiconductor layer of one conductivity type, each said insulated gate consisting of three layers of a gate oxide film, a gate electrode and an insulating film; after forming the at least one insulated gate having the gate oxide film, the gate electrode and the insulating film, forming well layers of the other conductivity type in the semiconductor layer, said well layers being formed in self-alignment with said at least one insulated gate, said well layers each having a higher impurity concentration than that of the semiconductor layer; forming, only on an insulator film located on the side walls of the insulated gate, films doped with impurities of the one conductivity type; diffusing the impurities from the films doped with the one conductivity type impurities into the well layers to form source layers having the one conductivity type and a higher impurity concentration than that of the well layers; and forming a source electrode in ohmic contact with exposed portions of the source layers and the well layers, and extending over the at least one insulated gate.

Claim 31

A method for fabricating an insulated gate semiconductor device comprising the steps of: selectively forming at least one insulated gate on the surface of a semiconductor layer of one conductivity type, each said insulated gate consisting of three layers of a gate oxide film, a gate electrode and an insulating film; after forming the at least one insulated gate having the gate oxide film, the gate electrode and the insulating film, forming well layers of the other conductivity type in the semiconductor layer, said well layers being formed in self-alignment with said at least one insulated gate, said well layers each having a higher impurity concentration than that of the semiconductor layer; forming, only on an insulator film located on the side walls of the insulated gate, films doped with impurities of the one conductivity type; diffusing the impurities from the films doped with the one conductivity type impurities into the well layers to form source layers having the one conductivity type and a higher impurity concentration than that of the well layers; and forming a source electrode in ohmic contact with exposed portions of the source layers and the well layers, and extending over the at least one insulated gate.

Claim 32

A method for fabricating an insulated gate semiconductor device comprising the steps of: forming a plurality of insulated gates, each consisting of three layers of a gate oxide film, a gate electrode and an insulating film, at predetermined intervals on the surface of a semiconductor layer of one conductivity type; after forming the at least one insulated gate having the gate oxide film, the gate electrode and the insulating film, forming a plurality of well layers of the other conductivity type in the semiconductor layer, said plurality of well layers being in self-alignment with said plurality of insulated gates, said well layers each having a higher impurity concentration than that of the semiconductor layer; forming a doped film on the entire surface of the insulated gates and well layers; removing said doped film by anisotropic-dry-etching so that remaining doped films are left on only the side walls of the insulated gates in regions between the insulated gates; diffusing the impurities from the remaining doped films on the side walls of the insulated gates into the well layers to form source layers each having the one conductivity type and a higher concentration than that of the well layers; removing the remaining doped films from the side walls of the insulated gates; forming insulator films on the side walls of the insulated gates; and forming a source electrode kept in ohmic contact with the exposed portions of the source layers and the well layers and extended over the insulated gates.

Claim 33

A method for fabricating an insulated gate semiconductor device comprising the steps of: forming a plurality of insulated gates, each consisting of three layers of a gate oxide film, a gate electrode and an insulating film, at predetermined intervals on the surface of a semiconductor layer of one conductivity type; after forming the at least one insulated gate having the gate oxide film, the gate electrode and the insulating film, forming a plurality of well layers of the other conductivity type in the semiconductor layer, said plurality of well layers being in self-alignment with said plurality of insulated gates, said well layers each having a higher impurity concentration than that of the semiconductor layer; forming a doped film on the entire surface of the insulated gates and well layers; removing said doped film by anisotropic-dry-etching so that remaining doped films are left on only the side walls of the insulated gates in regions between the insulated gates; diffusing the impurities from the remaining doped films on the side walls of the insulated gates into the well layers to form source layers each having the one conductivity type and a higher concentration than that of the well layers; removing the remaining doped films from the side walls of the insulated gates; forming insulator films on the side walls of the insulated gates; and forming a source electrode kept in ohmic contact with the exposed portions of the source layers and the well layers and extended over the insulated gates.

Claim 35

A method for fabricating an insulated gate semiconductor device comprising the steps of: forming a plurality of insulated gates, each consisting of three layers of a gate oxide film, a gate electrode and an insulating film, at predetermined intervals on the surface of a semiconductor layer of one conductivity type; after forming the insulated gates having the gate oxide film, the gate electrode and the insulating film, forming a plurality of well layers of the other conductivity type in the semiconductor layer using the insulated gates as masks, said well layers each having a higher impurity concentration than that of the semiconductor layer; forming a doped insulator on the entire surface of the insulated gates and the well layers; removing said doped insulator by anisotropic-dry-etching so that a remaining portion is left on only the side walls of the insulated gates in regions between the insulating gates; diffusing impurities from the remaining portion of the doped insulator, on the side walls of the insulated gates, into the well layers to form source layers each having the one conductivity type and a higher concentration than that of the well layers; and forming a source electrode kept in ohmic contact with the exposed portions of the source layers and the well layers and extended over the insulated gates.

Claim 36

A method for fabricating an insulated gate semiconductor device comprising the steps of: forming a plurality of insulated gates, each consisting of three layers of a gate oxide film, a gate electrode and an insulating film, at predetermined intervals on the surface of a semiconductor layer of one conductivity type; after forming the insulated gates having the gate oxide film, the gate electrode and the insulating film, forming a plurality of well layers of the other conductivity type in the semiconductor layer using the insulated gates as masks, said well layers each having a higher impurity concentration than that of the semiconductor layer; forming a doped insulator on the entire surface of the insulated gates and the well layers; removing said doped insulator by anisotropic-dry-etching so that a remaining portion is left on only the side walls of the insulated gates in regions between the insulating gates; diffusing impurities from the remaining portion of the doped insulator, on the side walls of the insulated gates, into the well layers to form source layers each having the one conductivity type and a higher concentration than that of the well layers; and forming a source electrode kept in ohmic contact with the exposed portions of the source layers and the well layers and extended over the insulated gates.