US5030580A
Expired / Lapsed
US
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Method for producing a silicon carbide semiconductor device
Assignee: Sharp Corp
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Filing: 1990-08-23
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Granted: 1991-07-09
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Expires: 2010-08-23
Abstract
Abstract A method for producing a silicon carbide semiconductor device having at least one of the p-type conductive layer and the n-type conductive layer is disclosed which includes the steps of: forming a silicon carbide single-crystal layer on a semiconductor substrate or semiconductor bulk single crystal; and implanting the III group of V group element ions in combination with fluorine ions in the silicon carbide single-crystal layer to form a p-type or n-type conductive layer, respectively.
Inventors
- 👤 Katsuki Furukawa
- 👤 Akira Suzuki
- 👤 Yoshihisa Fujii
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 23:14
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/21; H10P30/202; H10P30/204; H10P30/2042; H10P30/218; Y; Y10; Y10S; Y10S438/00; Y10S438/931
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
63 words
A method for producing a silicon carbide semiconductor device having at least one of the p-type conductive layer and the n-type conductive layer, comprising the steps of: forming a silicon carbide single-crystal layer; and implanting the III group or V group element ions in combination with fluorine ions in said silicon carbide single-crystal layer to form a p-type or n-type conductive layer, respectively.
Claim 2
Independent Claim
63 words
A method for producing a silicon carbide semiconductor device having at least one of the p-type conductive layer and the n-type conductive layer, comprising the steps of: forming a silicon carbide single-crystal layer; and implanting the III group or V group element ions in combination with fluorine ions in said silicon carbide single-crystal layer to form a p-type or n-type conductive layer, respectively.
Claim 3
Dependent Claim
24 words
A method according to claim 1, further comprising the step of annealing said p-type or n-type conductive layer to activate the ions implanted therein.
Claim 4
Dependent Claim
18 words
A method according to claim 1, wherein said silicon carbide single-crystal layer is formed on a semiconductor substrate.
Claim 5
Dependent Claim
20 words
A method according to claim 1, wherein said silicon carbide single-crystal layer is formed on a semiconductor bulk single crystal.
Claim 6
Dependent Claim
29 words
A method according to claim 1, wherein said group III element ions are selected from the group consisting of boron (B) ions, aluminum (Al) ions, and gallium (Ga) ions.
Claim 7
Dependent Claim
29 words
A method according to claim 1, wherein said group V element ions are selected from the group consisting of nitrogen (N) ions, phosphorous (P) ions, and arsenic (As) ions.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1994-07-08 | 1995-01-07 | 1995-07-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-07-08 | 1999-01-07 | 1999-07-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-07-08 | 2003-01-07 | 2003-07-09 | $7700.00 | Window Closed / Lapsed |