Low current driver for gate array

Claim 2

A circuit in a gate array for providing a low current to an output comprising: first and second reference voltage sources; a first transistor of a first conductivity type; a plurality of second transistors of a second conductivity type series connected between said first and second reference voltage sources; and a third transistor series connected with said first transistor between said first reference voltage source and said output; wherein the control electrode of said first transistor is connected to a common point between two of said second transistors.

Claim 3

The circuit of claim 1 wherein each of said second transistors is diode connected.

Claim 4

The circuit of claim 2 wherein each of said second transistors is an n-type MOSFET with the gate of each such second transistor connected to its drain.

Claim 5

The circuit of claim 1 wherein said plurality of second transistors consists of two transistors, wherein one of said second transistors is diode connected and the other is shut off.

Claim 6

The circuit of claim 4 wherein said diode connected transistor has a threshold voltage less than half the difference between the reference voltage sources.

Claim 7

The circuit of claim 4 wherein said diode connected transistor is connected to said first reference voltage source and said shut off transistor is connected to said second reference voltage source.

Claim 8

The circuit of claim 6 wherein each of said second transistors is an n-type MOSFET with the gate of said diode connected transistor connected to its drain and the gate of said shut off transistor connected to its source.

Claim 9

The circuit of claim 7 wherein said common point between said second transistors is the source of said diode connected transistor and the drain of said shut off transistor.

Claim 10

The circuit of claim 1 wherein the control electrode of said third transistor is connected to receive an enable signal for selectively turning on and off said third transistor.

Claim 11

The circuit of claim 1 wherein said second transistors are the same size.

Claim 12

The circuit of claim 1 further comprising: at least one additional transistor of said first conductivity type series connected with said first transistor; wherein the control electrode of each of said additional transistors is connected to said common point.

Claim 13

The circuit of claim 11 wherein said first conductivity type transistors are the same size and wherein said second transistors are the same size.

Claim 14

The circuit of claim 12 wherein said first conductivity type transistors are p-type MOSFETs and said second transistors are n-type MOSFETs.

Claim 15

The circuit of claim 13 wherein said third transistor is the same size and conductivity as said first conductivity type transistors.

Claim 16

A circuit in a gate array for providing a low current to an output comprising: first and second reference voltage sources; a plurality of uniformly sized first transistors of a first conductivity type; a plurality of diode connected, uniformly sized second transistors of a second conductivity type series connected between said first and second reference voltage sources; and a third transistor of the same size and conductivity as said first transistors, series connected with said first transistors between said first reference voltage source and said output, wherein the control electrode of said third transistor is connected to receive an enable signal for selectively turning on and off said third transistor; wherein the control electrode of each first transistor is connected to a common point between two of said second transistors.

Claim 17

A circuit in a gate array for providing a low current to an output comprising: first and second reference voltage sources; a plurality of uniformly sized first transistors of a first conductivity type; a plurality of diode connected, uniformly sized second transistors of a second conductivity type series connected between said first and second reference voltage sources; and a third transistor of the same size and conductivity as said first transistors, series connected with said first transistors between said first reference voltage source and said output, wherein the control electrode of said third transistor is connected to receive an enable signal for selectively turning on and off said third transistor; wherein the control electrode of each first transistor is connected to a common point between two of said second transistors.

Claim 18

The circuit of claim 15 wherein said first transistors are p-type MOSFETs and said second transistors are n-type MOSFETs with the gate of each second transistor connected to its respective drain.

Claim 19

A circuit in a gate array for providing a low current to an output comprising: first and second reference voltage sources; a plurality of uniformly sized first transistors of a first conductivity type; second and third uniformly sized transistors of a second conductivity type series connected between said first and second reference voltage sources, wherein said second transistor is diode connected and said third transistor is shut off, said second transistor being connected to said first reference voltage source and said third transistor being connected to said second reference voltage source; and a fourth transistor of the same size and conductivity as said first transistors, series connected with said first transistors between said first reference voltage source and said output, wherein the control electrode of said fourth transistor is connected to receive an enable signal for selectively turning on and off said fourth transistor; wherein the control electrode of each first transistor is connected to the common point between said second and third transistors.

Claim 20

A circuit in a gate array for providing a low current to an output comprising: first and second reference voltage sources; a plurality of uniformly sized first transistors of a first conductivity type; second and third uniformly sized transistors of a second conductivity type series connected between said first and second reference voltage sources, wherein said second transistor is diode connected and said third transistor is shut off, said second transistor being connected to said first reference voltage source and said third transistor being connected to said second reference voltage source; and a fourth transistor of the same size and conductivity as said first transistors, series connected with said first transistors between said first reference voltage source and said output, wherein the control electrode of said fourth transistor is connected to receive an enable signal for selectively turning on and off said fourth transistor; wherein the control electrode of each first transistor is connected to the common point between said second and third transistors.

Claim 21

The circuit of claim 17 wherein said second transistor has a threshold voltage less than half the difference between the reference voltage sources.

Claim 22

The circuit of claim 18 wherein said first transistors are p-type MOSFETs and said second and third transistors are n-type MOSFETs, with the gate of said second transistor connected to its drain and the gate of third transistor connected to its source, and wherein said common point between said second and third transistors is the source of said second transistor and the drain of said third transistor.

Claim 23

In a gate array having uniformly sized transistors of a defined conductivity type, uniformly sized transistors of a complementary conductivity type, and first and second reference voltage sources, a circuit comprising: a first of said defined conductivity type transistors connected between said first reference voltage source and an output; and means consisting of at least two of said complementary conductivity type transistors for providing an intermediate voltage, between the voltages of said first and second voltage sources, to the control electrode of said first transistor.

Claim 24

In a gate array having uniformly sized transistors of a defined conductivity type, uniformly sized transistors of a complementary conductivity type, and first and second reference voltage sources, a circuit comprising: a first of said defined conductivity type transistors connected between said first reference voltage source and an output; and means consisting of at least two of said complementary conductivity type transistors for providing an intermediate voltage, between the voltages of said first and second voltage sources, to the control electrode of said first transistor.

Claim 25

The circuit of claim 20 wherein said complementary conductivity type transistors are individually diode connected and collectively series connected between said first and second reference voltage sources, and wherein said intermediate voltage is provided by a common point between two of said complementary type transistors.

Claim 26

The circuit of claim 21 further comprising: means connected to said first transistor for controlling a low current flow to said output.

Claim 27

The circuit of claim 22 wherein said controlling means includes a second of said defined conductivity type transistors, series connected with said first transistor between said first reference voltage source and said output.

Claim 28

The circuit of claim 23 further comprising at least one additional defined conductivity type transistor series connected with said first and second transistors, wherein the control electrode of each of said additional transistors receives said intermediate voltage.

Claim 29

The circuit of claim 20 wherein said complementary conductivity type transistors include second and third transistors series connected between said first and second reference voltage sources, wherein said second transistor is diode connected and said third transistor is shut off, and wherein said intermediate voltage is provided by the common point between said second and third transistors.

Claim 30

The circuit of claim 25 wherein said second transistor has a threshold voltage less than half the difference between the reference voltage sources.

Claim 31

The circuit of claim 26 further comprising: means connected to said first transistor for controlling a low current flow to said output.

Claim 32

The circuit of claim 27 wherein said controlling means includes a fourth transistor of said defined conductivity type, series connected with said first transistor between said first reference voltage source and said output.

Claim 33

The circuit of claim 28 further comprising at least one additional defined conductivity type transistor series connected with said first and second transistors, wherein the control electrode of each of said additional transistors receives said intermediate voltage.