Patent US5027172A successfully refreshed from Google Patents.
US5027172A
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Dynamic random access memory cell and method of making thereof
Assignee: Samsung Electronics Co Ltd
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Filing: 1989-12-18
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Granted: 1991-06-25
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Expires: 2009-12-18
Abstract
Abstract A method of making a DRAM cell capable of increaisng storage capacity and for which is amendable to large-scale integration. The method provides a DRAM cell having stacked and trench capacitors and a transistor of second conductivity type opposite to a first conductivity type on a semiconductor substrate of the first conductivity type. Polycrystalline silicon of a cell node in the stack capacitor is coupled to source region of the transistor. The cell node of the trench capacitor is coupled to the source region of the transistor through an N-type diffusion region around the trench that is formed between said source region and a field oxide. Over the trench capacitor is disposed the stacked capacitor, and the cell nodes are coupled to each other. A cell plate filling the inside of the trench may be used in common since it surrounds the polycrystalline silicon, that is, the cell node of the stacked capacitor.
Inventors
- 👤 Jun-Young Jeon
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 09:45
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/30; H10B12/37; H10B12/377; H10B12/01; H10B12/02; H10B12/03
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
198 words
A DRAM cell having a field oxide layer formed on the surface of a semiconductor substrate of a first conductivity type in order to isolate adjacent cells, drain and source regions of a second conductivity type opposite to the first conductivity type mutually separated by a given distance on the substrate, a gate oxide layer on the substrate between said source and drain regions, and word lines of a conductivity type being grown on said field oxide layer, said DRAM cell comprising: a trench formed under a given portion between said source region and field oxide layer; a diffusion layer connected with said source region by ion-implanting impurities of a second conductivity type disposed into the substrate around said trench; a first polycrystalline silicon layer connected with said source region and isolated from said word lines by a first insulating film; a dielectric film formed on an inside surface of said trench and on said first polycrystalline silicon layer; a second polycrystalline silicon layer formed on the dielectric film so as to fill the inside of said trench; and a bit line connected with said drain region through an opening hole and isolated by a second insulating film.
Claim 2
Dependent Claim
198 words
A DRAM cell having a field oxide layer formed on the surface of a semiconductor substrate of a first conductivity type in order to isolate adjacent cells, drain and source regions of a second conductivity type opposite to the first conductivity type mutually separated by a given distance on the substrate, a gate oxide layer on the substrate between said source and drain regions, and word lines of a conductivity type being grown on said field oxide layer, said DRAM cell comprising: a trench formed under a given portion between said source region and field oxide layer; a diffusion layer connected with said source region by ion-implanting impurities of a second conductivity type disposed into the substrate around said trench; a first polycrystalline silicon layer connected with said source region and isolated from said word lines by a first insulating film; a dielectric film formed on an inside surface of said trench and on said first polycrystalline silicon layer; a second polycrystalline silicon layer formed on the dielectric film so as to fill the inside of said trench; and a bit line connected with said drain region through an opening hole and isolated by a second insulating film.
Claim 3
Dependent Claim
16 words
The DRAM cell according to claim 1, wherein said first insulating film is an oxide film.
Claim 4
Dependent Claim
24 words
The DRAM cell according to claim 1, wherein said first polycrystalline silicon layer and diffusion layer are connected to said source region is parallel.
Claim 5
Dependent Claim
151 words
A semiconductor memory cell comprising: a field oxide layer formed on the surface of said semiconductor substrate in order to isolate adjacent cells; drain and source regions of a second conductivity type mutually separated by a given distance on the substrate; a gate oxide on the substrate between said source and drain regions; word lines grown on said field oxide layer; a trench formed under a given portion between said source region and field oxide layer; a diffusion layer connected with said source region by impurities of a second conductivity type disposed into the substrate said trench; a first polycrystalline silicon connected with said source region and isolated from said word lines by a first insulating film; a dielectric film formed on the inside of said trench and a first polycrystalline silicon; and a second polycrystalline silicon formed on the dielectric film so as to fill the inside of said trench.
Claim 6
Dependent Claim
151 words
A semiconductor memory cell comprising: a field oxide layer formed on the surface of said semiconductor substrate in order to isolate adjacent cells; drain and source regions of a second conductivity type mutually separated by a given distance on the substrate; a gate oxide on the substrate between said source and drain regions; word lines grown on said field oxide layer; a trench formed under a given portion between said source region and field oxide layer; a diffusion layer connected with said source region by impurities of a second conductivity type disposed into the substrate said trench; a first polycrystalline silicon connected with said source region and isolated from said word lines by a first insulating film; a dielectric film formed on the inside of said trench and a first polycrystalline silicon; and a second polycrystalline silicon formed on the dielectric film so as to fill the inside of said trench.
Claim 7
Dependent Claim
24 words
The DRAM cell according to claim 4, wherein said first polycrystalline silicon and diffusion layer of impurity are connected to source region in parallel.
Claim 8
Dependent Claim
16 words
The memory cell according to claim 4, wherein said first insulating film is an oxide film.
Claim 9
Dependent Claim
24 words
The memory cell according to claim 4, wherein said first polycrystalline silicon layer and diffusion layer are connected to said source region in parallel.
Claim 10
Dependent Claim
24 words
The memory cell according to claim 6, wherein said first polycrystalline silicon layer and diffusion layer are connected to said source region in parallel.
Claim 11
Dependent Claim
137 words
A semiconductor memory cell, comprising: a semiconductor substrate of a first type conductivity; a region of a second type conductivity; a gate oxide layer disposed upon a surface of said substrate, adjacent to a first side of said region; a word line spaced apart from a second side of said region; a trench formed through, and extending into said substrate below said region; a diffusion layer connected with said region by impurities of a second type conductivity disposed into the substrate around said trench; a first insulating film; a first polycrystalline silicon layer connected with said region and isolated from said word line by said first insulating film; a dielectric film disposed on an inside surface of said trench and on said first polycrystalline silicon layer; and a second polycrystalline silicon layer formed on said dielectric film.
Claim 12
Dependent Claim
137 words
A semiconductor memory cell, comprising: a semiconductor substrate of a first type conductivity; a region of a second type conductivity; a gate oxide layer disposed upon a surface of said substrate, adjacent to a first side of said region; a word line spaced apart from a second side of said region; a trench formed through, and extending into said substrate below said region; a diffusion layer connected with said region by impurities of a second type conductivity disposed into the substrate around said trench; a first insulating film; a first polycrystalline silicon layer connected with said region and isolated from said word line by said first insulating film; a dielectric film disposed on an inside surface of said trench and on said first polycrystalline silicon layer; and a second polycrystalline silicon layer formed on said dielectric film.
Claim 13
Dependent Claim
16 words
The memory cell according to claim 9, wherein said first insulating film is an oxide film.
Claim 14
Dependent Claim
22 words
The DRAM cell according to claim 9, wherein said first polycrystalline silicon and diffusion layer are connected in parallel to said region.
References Cited (Backward Citations)
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