Semiconductor device

Claim 2

A semiconductor device comprising a semiconductor chip, a diffusion layer formed on said semiconductor chip, an insulator film layer formed on said semiconductor chip, a metallization film layer formed on said semiconductor chip, an electrode portion formed on said metallization form layer, a protection film layer formed on said metallization film layer, a wire connected to said electrode portion, a lead frame connected to said wire, and package covering said semiconductor chip, said protection film layer and said wire, characterized in that said metallization film layer is made of Cu alloy which contains a metal element less noble than Cu and the balance of which consists of Cu and unavoidable impurities; said metal element less noble than Cu is at least one element selected from the group consisting of Al, Be, Cr, Fe, Mg, Ni, Si, Sn and Zn and the content of said metal element less noble than Cu in a weight ratio is 0.01 to 0.5% of Al, 0.01 to 0.3% of Be, 0.01 to 0.3% of Cr, 0.01 to 0.2% of Fe, 0.01 to 0.3% of Mg, 0.01 to 0.5% of Ni, 0.01 to 0.2% of Si, 0.01 to 0.5% of Sn and 0.01 to 2% of Zn; said film layer exhibiting high electrical conductivity, high heat resistance, high electro-migration resistance and high corrosion resistance.

Claim 3

A semiconductor device comprising a Si semiconductor chip, a diffusion layer formed on said Si semiconductor chip, an insulator film layer formed on said Si semiconductor chip, a metallization film layer formed on said Si semiconductor chip, an electrode portion formed on said metallization film layer, a protection film layer formed on said metallization film layer, and an Au film connected to said electrode portion, a Cu lead frame connected to said Au wire, and a resin or ceramic package covering said Si semiconductor chip, said protection film layer and said Au wire, characterized in that said metallization film layer is made of Cu alloy which contains a metal element less noble than Cu and the balance of which consists of Cu and unavoidable impurities, said metal element less noble than Cu is at least one element selected from the group consisting of Al, Be, Cr, Fe, Mg, Ni, Si, Sn and Zn and the content of said metal element less noble than Cu in a weight ratio is 0.01 to 0.5% of Al, 0.01 to 0.3% of Be, 0.01 to 0.3% of Cr, 0.01 to 0.2% of Fe, 0.01 to 0.3%of Mg, 0.01 to 0.5% of Ni, 0.01 to 0.2% of Si, 0.01 to 0.5% of Sn and 0.01 to 2% of Zn; said film layer exhibiting high electrical conductivity, high heat resistance, high electro-migration resistance and high corrosion resistance.

Claim 4

A semiconductor device comprising a Si semiconductor chip, a diffusion layer formed on said Si semiconductor chip, an insulator film layer formed on said Si semiconductor chip, a metallization film layer formed on said Si semiconductor chip, an electrode portion formed on said metallization film layer, a protection film layer formed on said metallization film layer, and an Au film connected to said electrode portion, a Cu lead frame connected to said Au wire, and a resin or ceramic package covering said Si semiconductor chip, said protection film layer and said Au wire, characterized in that said metallization film layer is made of Cu alloy which contains a metal element less noble than Cu and the balance of which consists of Cu and unavoidable impurities, said metal element less noble than Cu is at least one element selected from the group consisting of Al, Be, Cr, Fe, Mg, Ni, Si, Sn and Zn and the content of said metal element less noble than Cu in a weight ratio is 0.01 to 0.5% of Al, 0.01 to 0.3% of Be, 0.01 to 0.3% of Cr, 0.01 to 0.2% of Fe, 0.01 to 0.3%of Mg, 0.01 to 0.5% of Ni, 0.01 to 0.2% of Si, 0.01 to 0.5% of Sn and 0.01 to 2% of Zn; said film layer exhibiting high electrical conductivity, high heat resistance, high electro-migration resistance and high corrosion resistance.