EP0158509A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Lead materials for semiconductor devices
Assignee: Kobe Steel Ltd
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Filing: 1985-04-03
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Granted: —
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Expires: 2005-04-03
Abstract
Abstract A lead material for semiconductor devices comprising from 0.4 to 4.0 wt% of Ni, from 0.1 to 1.0 wt% of Si, from 0.05 to 1.0 wt% of Zn, from 0.01 to 1.0 wt% of Mn, from 0.001 to less than 0.01 wt% of Mg, from 0.001 to less than 0.01 wt% of Cr, up to 0.003 wt% of S, and the balance of Cu and inevitable impurities. The material may further comprise up to 5 ppm of hydrogen and up to 5 ppm of oxygen.
Inventors
- 👤 Motohisa Miyafuji
- 👤 Takashi Matsui
- 👤 Hidekazu Harada
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-03 00:48
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/20; H10W70/24; H10W72/00
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
67 words
A lead material for semiconductor devices comprising from 0.4 to 4.0 wt% of Ni, from 0.1 to 1.0 wt% of Si, from 0.05 to 1.0 wt% of Zn, from 0.01 to 1.0 wt% of Mn, from 0.001 to less than 0.01 wt% of Mg, from 0.001 to less than 0.01 wt% of Cr, up to 0.003 wt% of S, and the balance of Cu and inevitable impurities.
Claim 2
Dependent Claim
67 words
A lead material for semiconductor devices comprising from 0.4 to 4.0 wt% of Ni, from 0.1 to 1.0 wt% of Si, from 0.05 to 1.0 wt% of Zn, from 0.01 to 1.0 wt% of Mn, from 0.001 to less than 0.01 wt% of Mg, from 0.001 to less than 0.01 wt% of Cr, up to 0.003 wt% of S, and the balance of Cu and inevitable impurities.
Claim 3
Dependent Claim
16 words
The lead material according to Claim 1, wherein S is substantially in the form of MgS.
Claim 4
Dependent Claim
24 words
The lead material according to Claim 1 or 2, further comprising up to 5 ppm of hydrogen and up to 5 ppm of oxygen.
References Cited (Backward Citations)
No citation records indexed.
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