US4750029A
Expired / Lapsed
US
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Copper base lead material for leads of semiconductor devices
Assignee: Mitsubishi Shindoh Co Ltd
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Filing: 1987-03-26
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Granted: 1988-06-07
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Expires: 2007-03-26
Abstract
Abstract A copper base lead material for leads of a semiconductor device, which consists essentially of from 0.05 to 0.25 percent by weight tin, from 0.01 to 0.2 percent by weight silver, from 0.025 to 0.1 percent by weight phosphorus, from 0.05 to 0.2 percent by weight magnesium, and the balance of copper and inevitable impurities, wherein the P/Mg ratio is within a range from 0.5 to 0.85, preferably within a range from 0.60 to 0.85, so as to form a compound of magnesium and phosphorus or Mg3P2. The copper base lead material possesses satisfactory properties required of a metal material for leads in semiconductor devices, such as strength, thermal resistance, and stampability, and further possesses excellent heat radiation to an extent suitable for use as leads of semiconductor devices having high wiring densities. The invention also includes the semiconductor device containing said leads.
Inventors
- 👤 Rensei Futatsuka
- 👤 Tadao Sakakibara
- 👤 Shunichi Chiba
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 23:59
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/40; H10W70/456; H01; H01B; H01B1/00; H01B1/02; H01B1/026; H10W72/00; H10W72/01; H10W72/015; H10W72/01565; H10W72/50; H10W72/551; H10W72/552; H10W72/5522; H10W72/5525
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
64 words
A copper base lead material for leads of a semiconductor device, which consists essentially of from 0.05 to 0.25 percent by weight tin, from 0.01 to 0.2 percent by weight silver, from 0.025 to 0.1 percent by weight phosphorus, from 0.05 to 0.2 percent by weight magnesium, and the balance of copper and inevitable impurities, wherein the P/Mg ratio is from 0.5 to 0.85.
Claim 2
Dependent Claim
64 words
A copper base lead material for leads of a semiconductor device, which consists essentially of from 0.05 to 0.25 percent by weight tin, from 0.01 to 0.2 percent by weight silver, from 0.025 to 0.1 percent by weight phosphorus, from 0.05 to 0.2 percent by weight magnesium, and the balance of copper and inevitable impurities, wherein the P/Mg ratio is from 0.5 to 0.85.
Claim 3
Dependent Claim
50 words
The copper base lead material of claim 1, further containing at least one element selected from the group consisting of aluminum, manganese, calcium, and boron, to act as at least one deoxidizer, said at least one element being each contained in an amount not more than 0.01 percent by weight.
Claim 4
Dependent Claim
23 words
The copper base lead material for leads of a semiconductor device of claim 9, wherein the P/Mg ratio is from 0.6 to 0.85.
Claim 5
Dependent Claim
50 words
The copper base lead material of claim 3, further containing at least one element selected from the group consisting of aluminum, manganese, calcium, and boron, to act as at least one deoxidizer, said at least one element being each contained in an amount not more than 0.01 percent by weight.
Claim 6
Dependent Claim
66 words
A semiconductor device having leads, said leads comprising a copper base lead material which consists essentially of from 0.05 to 0.25 percent by weight tin, from 0.01 to 0.2 percent by weight silver, from 0.025 to 0.1 percent by weight phosphorus, from 0.05 to 0.2 percent by weight magnesium, and the balance of copper and inevitable impurities, wherein the P/Mg ratio is from 0.5 to 0.85.
Claim 7
Dependent Claim
66 words
A semiconductor device having leads, said leads comprising a copper base lead material which consists essentially of from 0.05 to 0.25 percent by weight tin, from 0.01 to 0.2 percent by weight silver, from 0.025 to 0.1 percent by weight phosphorus, from 0.05 to 0.2 percent by weight magnesium, and the balance of copper and inevitable impurities, wherein the P/Mg ratio is from 0.5 to 0.85.
Claim 8
Dependent Claim
54 words
The semiconductor device of claim 5, wherein said copper base lead material also contains at least one element selected from the group consisting of aluminum, manganese, calcium, and boron, to act as at least one deoxidizer, said at least one element being each contained in an amount not more than 0.01 percent by weight.
Claim 9
Dependent Claim
21 words
The semiconductor device of claim 5, wherein in said copper base lead material, the P/Mg ratio is from 0.6 to 0.85.
Claim 10
Dependent Claim
54 words
The semiconductor device of claim 7, wherein said copper base lead material also contains at least one element selected from the group consisting of aluminum, manganese, calcium, and boron, to act as at least one deoxidizer, said at least one element being each contained in an amount not more than 0.01 percent by weight.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-06-07 | 1991-12-07 | 1992-06-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-06-07 | 1995-12-07 | 1996-06-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-06-07 | 1999-12-07 | 2000-06-07 | $7700.00 | Window Closed / Lapsed |