US5023674A
Expired / Lapsed
US
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Field effect transistor
Assignee: Fujitsu Ltd
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Filing: 1990-10-04
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Granted: 1991-06-11
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Expires: 2010-10-04
Abstract
Abstract A field effect transistor includes a semiconductor substrate, first and second semiconductor layers formed on the semiconductor substrate, and third semiconductor layers located between the first and second semiconductor layers. The third semiconductor layers have a forbidden band width narrower than those in the first and second semiconductor layers and form a quantum well. The third semiconductor layers include a doping layer such as planar-doping or high doping, and a channel is formed in the third semiconductor layers along the quantum well. The electrons supplied from the doped layer are confined by the quantum well and form a quasi-two-dimensional electron gas.
Inventors
- 👤 Kohki Hikosaka
- 👤 Yasutake Hirachi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 23:27
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/82; H10D62/824; H10D30/00; H10D30/40; H10D30/47; H10D30/471; H10D30/473; H10D30/4732; H10D30/4735; H10D62/60; H10D62/605; H10D64/00; H10D64/60; H10D64/602
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
219 words
A field effect transistor, comprising: a semiconductor substrate; a first semiconductor layer formed on said semiconductor substrate; a second semiconductor layer formed above said first semiconductor layer, said first and second semiconductor layers each having an electron affinity and each having an overall layer thickness such that carriers cannot tunnel therethrough; a third semiconductor layer, formed between said first and second semiconductor layers and heterojunctions formed between said first and third semiconductor layers and said second and third semiconductor layers, said third semiconductor layer having an electron affinity larger than the electron affinity in the first and second semiconductor layers, forming a quantum well, and including a doped layer being planar doped or highly doped, electrons supplied from the doped layer being confined by said quantum well and forming a quasi-two-dimensional electron gas, and said third semiconductor layer having an entire layer thickness such that only one two-dimensional electron gas layer is formed as a channel layer; a gate electrode, for controlling carriers in said third semiconductor layer, formed above said second semiconductor layer; a source/drain region provided on two sides of said gate electrode and contacting said first, second and third semiconductor layers; a source electrode and a drain electrode formed on said source/drain region; and a channel formed in said third semiconductor layer along said quantum well.
Claim 2
Dependent Claim
219 words
A field effect transistor, comprising: a semiconductor substrate; a first semiconductor layer formed on said semiconductor substrate; a second semiconductor layer formed above said first semiconductor layer, said first and second semiconductor layers each having an electron affinity and each having an overall layer thickness such that carriers cannot tunnel therethrough; a third semiconductor layer, formed between said first and second semiconductor layers and heterojunctions formed between said first and third semiconductor layers and said second and third semiconductor layers, said third semiconductor layer having an electron affinity larger than the electron affinity in the first and second semiconductor layers, forming a quantum well, and including a doped layer being planar doped or highly doped, electrons supplied from the doped layer being confined by said quantum well and forming a quasi-two-dimensional electron gas, and said third semiconductor layer having an entire layer thickness such that only one two-dimensional electron gas layer is formed as a channel layer; a gate electrode, for controlling carriers in said third semiconductor layer, formed above said second semiconductor layer; a source/drain region provided on two sides of said gate electrode and contacting said first, second and third semiconductor layers; a source electrode and a drain electrode formed on said source/drain region; and a channel formed in said third semiconductor layer along said quantum well.
Claim 3
Dependent Claim
19 words
A field effect transistor according to claim 1, wherein said quantum well is provided as a single quantum well.
Claim 4
Dependent Claim
48 words
A field effect transistor according to claim 2, wherein said semiconductor substrate includes semi-insulator gallium-arsenide GaAs, said first and second semiconductor layers include aluminum-gallium-arsenide AlGaAs, said third semiconductor layer is made of gallium-arsenide GaAs, and a non-doped gallium-arsenide layer is located on both sides of said doped layer.
Claim 5
Dependent Claim
60 words
A field effect transistor according to claim 1, wherein said third semiconductor layer comprises: a first layer including said doped layer, said first layer having a first thickness; a second layer being substantially non-doped and having a second thickness greater than the first thickness; and a barrier layer, formed between said first and second layers, allowing a tunneling effect therethrough.
Claim 6
Dependent Claim
211 words
A field effect transistor comprising: a semiconductor substrate formed of semi-insulating gallium-arsenide (GaAs); a first semiconductor layer formed on said semiconductor substrate and formed of aluminum-gallium-arsenide (AlGaAs); a second semiconductor layer formed above said first semiconductor layer and formed of AlGaAs, said first and second semiconductor layers each having an overall layer thickness such that carriers cannot tunnel therethrough; a third semiconductor layer formed between said first and second semiconductor layers and formed of gallium-arsenide (GaAs), having a forbidden bandwidth narrower than a forbidden bandwidth of said first and second semiconductor layers and forming a quantum well, said third semiconductor layer including a doping layer being planar doped or highly doped, electrons supplied from said doping layer being confined by said quantum well and forming a quasi-two-dimensional electron gas, and having an entire layer thickness such that only one two-dimensional electron gas layer is formed as a channel layer; a gate electrode for controlling carriers in said third semiconductor layer formed above said second semiconductor layer; a source/drain region, provided on two sides of said gate electrode and contacting said first, second and third semiconductor layers; a source electrode and a drain electrode formed on said source/drain region; and a channel formed in said third semiconductor layer along said quantum well.
Claim 7
Dependent Claim
211 words
A field effect transistor comprising: a semiconductor substrate formed of semi-insulating gallium-arsenide (GaAs); a first semiconductor layer formed on said semiconductor substrate and formed of aluminum-gallium-arsenide (AlGaAs); a second semiconductor layer formed above said first semiconductor layer and formed of AlGaAs, said first and second semiconductor layers each having an overall layer thickness such that carriers cannot tunnel therethrough; a third semiconductor layer formed between said first and second semiconductor layers and formed of gallium-arsenide (GaAs), having a forbidden bandwidth narrower than a forbidden bandwidth of said first and second semiconductor layers and forming a quantum well, said third semiconductor layer including a doping layer being planar doped or highly doped, electrons supplied from said doping layer being confined by said quantum well and forming a quasi-two-dimensional electron gas, and having an entire layer thickness such that only one two-dimensional electron gas layer is formed as a channel layer; a gate electrode for controlling carriers in said third semiconductor layer formed above said second semiconductor layer; a source/drain region, provided on two sides of said gate electrode and contacting said first, second and third semiconductor layers; a source electrode and a drain electrode formed on said source/drain region; and a channel formed in said third semiconductor layer along said quantum well.
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