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US5023476A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device with power supply mode-change controller for reliability testing
Assignee: Toshiba Corp
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Filing: 1989-01-23
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Granted: 1991-06-11
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Expires: 2009-01-23
Abstract
Abstract An integrated semiconductor device is disclosed which has a highly-integrated circuit formed on a substrate. A constant voltage generator is connected to the integrated circuit, for receiving an externally-supplied d.c. power supply voltage to produce a regulated d.c. voltage, the potential level of which is lower than the external power supply voltage and remains substantially constant irrespective of the external power supply voltage. A mode-change controller is connected in parallel with the voltage generator, for supplying the output d.c. voltage of the voltage generator to the integrated circuit as an internal power supply voltage in a normal operation mode. When the device is subjected to an accelerated test using an increased power supply voltage, a switching transistor is rendered conductive under the control of a control circuit, thereby allowing the external power supply voltage to be directly applied to the integrated circuit.
Inventors
- 👤 Yohji Watanabe
- 👤 Tohru Furuyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 22:27
CPC Classifications
G; G11; G11C; G11C5/00; G11C5/14; G11C5/147; G05; G05F; G05F1/00; G05F1/10; G05F1/46; G05F1/462; G05F1/465; H; H10; H10D; H10D89/00; H10D89/60; H10D89/601; H10D89/811; H10D89/819
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
159 words
A semiconductor integrated circuit device comprising: a semiconductor substrate; a main circuit section formed on said substrate; constant voltage generator means formed on said substrate, for receiving an externally supplied d.c. power supply and for producing a regulated d.c. voltage having a potential level lower than that of the external power supply voltage; and operation reliability test means for executing an accelerated test for said integrated circuit device independently of an operating condition of said main circuit section, said test means comprising switching means formed on said substrate and connected to said main circuit section and said constant voltage generator means, for providing said regulated d.c. voltage from said constant voltage generator means to said main circuit section in a normal operation mode of said device, and for, in a test mode of device, allowing said external power supply voltage to be directly applied to said main circuit section as an increased power supply voltage for said accelerated test.
Claim 2
Dependent Claim
159 words
A semiconductor integrated circuit device comprising: a semiconductor substrate; a main circuit section formed on said substrate; constant voltage generator means formed on said substrate, for receiving an externally supplied d.c. power supply and for producing a regulated d.c. voltage having a potential level lower than that of the external power supply voltage; and operation reliability test means for executing an accelerated test for said integrated circuit device independently of an operating condition of said main circuit section, said test means comprising switching means formed on said substrate and connected to said main circuit section and said constant voltage generator means, for providing said regulated d.c. voltage from said constant voltage generator means to said main circuit section in a normal operation mode of said device, and for, in a test mode of device, allowing said external power supply voltage to be directly applied to said main circuit section as an increased power supply voltage for said accelerated test.
Claim 3
Dependent Claim
72 words
The device according to claim 1, wherein said operation reliability test means comprises: internal controller means (24) provided on said substrate, for detecting a time sequential change in the voltage level of said external power supply voltage (Vcc) which triggers the test test mode and the normal operation mode, said controller means driving said switching means so as to change its electrical condition between the test mode and the normal operation mode.
Claim 4
Dependent Claim
36 words
The device according to claim 2, wherein said controller means sets said device in said test mode when it is detected that the external power supply voltage is changed in a specific time sequential changing pattern.
Claim 5
Dependent Claim
86 words
The device according to claim 3, wherein said controller means detects that the external power supply voltage increases over a first reference voltage and a second reference voltage which is higher than the first voltage and then decreases below the first voltage changing the electrical condition of said switching means is such a manner that said constant voltage generator means is substantially disconnected from said main circuit section and the external power supply voltage is directly applied to said main circuit section in the test mode.
Claim 6
Dependent Claim
13 words
The device according to claim 4, wherein said switching means comprises a transistor.
Claim 7
Dependent Claim
13 words
The device according to claim 5, wherein said transistor includes a unipolar transistor.
Claim 8
Dependent Claim
21 words
The device according to claim 6, wherein said transistor comprises a metal oxide semiconductor field effect transistor having a gate electrode.
Claim 9
Dependent Claim
87 words
The device according to claim 7, wherein said control means comprises: reference voltage generator means for producing first and second output voltages which define the first and second voltages; comparator means for receiving the first and second output voltages of said reference voltage generator means, and for detecting a mutual relationship of the voltage of said outside power supply terminal with respect to the first and second reference voltages; and a flip-flop circuit connected to said comparator means and the gate electrode of said field effect transistor.
Claim 10
Dependent Claim
15 words
The device according to claim 1, wherein the main circuit section comprises a unipolar transistor.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-06-10 | 1994-12-10 | 1995-06-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-06-10 | 1998-12-10 | 1999-06-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-06-10 | 2002-12-10 | 2003-06-11 | $7700.00 | Window Closed / Lapsed |