US5023199A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of diffusing Zn into compound semiconductor
Assignee: Mitsubishi Electric Corp
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Filing: 1990-01-04
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Granted: 1991-06-11
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Expires: 2010-01-04
Abstract
Abstract A method of diffusing Zn into AlGaInP using Al x G 1-x As (0≦x≦1) as a diffusion stopping at a position of predetermined depth from the surface of the AlGaInP, or using Al x Ga 1-x As (0≦x≦1) as a diffusion mask which is disposed on the surface of the AlGaInP.
Inventors
- 👤 Takashi Murakami
- 👤 Takashi Motoda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 06:51
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/824; H10H20/8242; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/223; H01S5/2231; H10H20/01; H10H20/011; H10H20/013; H10P; H10P14/00; H10P14/20; H10P14/38; H10P14/3824; H10P32/00; H10P32/10; H10P32/14; H10P32/17; H10P32/174; H01S5/2054; H01S5/2059; Y; Y10; Y10S; Y10S148/00; Y10S148/095
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
118 words
A method of producing a laser diode comprising: successively growing a lower cladding layer, an active layer, an upper cladding layer, a current blocking layer, a cap layer, and an Al x Ga 1-x As (0 ≦x≦1) diffusion mask layer on a substrate; removing a portion of said diffusion mask to expose a portion of said cap layer; successively depositing a mixed film including Zn and a protection layer on said diffusion mask layer and said exposed portion of said cap layer; and diffusing Zn from said mixed layer through said exposed portion of said cap layer, through said current blocking and upper cladding layers underlying said exposed portion of said cap layer and into said active layer.
Claim 2
Independent Claim
118 words
A method of producing a laser diode comprising: successively growing a lower cladding layer, an active layer, an upper cladding layer, a current blocking layer, a cap layer, and an Al x Ga 1-x As (0 ≦x≦1) diffusion mask layer on a substrate; removing a portion of said diffusion mask to expose a portion of said cap layer; successively depositing a mixed film including Zn and a protection layer on said diffusion mask layer and said exposed portion of said cap layer; and diffusing Zn from said mixed layer through said exposed portion of said cap layer, through said current blocking and upper cladding layers underlying said exposed portion of said cap layer and into said active layer.
Claim 3
Dependent Claim
61 words
A method of producing a laser diode as defined in claim 1 wherein said substrate comprises GaAs, said lower and upper cladding layers and said current blocking layer comprise Al 0 .25 Ga 0 .25 In 0 .5 P, said active layer and said cap layer comprise Ga 0 .5 In 0 .5 P, and said diffusion mask layer comprises GaAs.
Claim 4
Dependent Claim
30 words
A method of producing a laser diode as defined in claim 1 wherein said mixed film comprises ZnO and SiO 2 , and said protection layer comprises SiO 2 .
Claim 5
Independent Claim
153 words
A method of producing a laser diode comprising: successively growing a lower cladding layer, an active layer, a first upper cladding layer, an Al x Ga 1-x As (0≦x≦1) diffusion stopping layer, a light guide layer, a second upper cladding layer, a cap layer, and an Al x Ga 1-x As (0≦x≦1) diffusion mask layer on a substrate; removing a portion of said diffusion mask layer to leave a stripe configuration mask and to expose portions of said cap layer at both sides of said stripe mask; successively depositing a mixed film containing Zn and a protection film on said diffusion stripe mask and said cap layer at both sides of said stripe mask; and diffusing Zn from said mixed film at both sides of the stripe mask through said cap, second upper cladding layer, and light guide layer and into said diffusion striping layer underlying said exposed portions of said cap layer.
Claim 6
Independent Claim
153 words
A method of producing a laser diode comprising: successively growing a lower cladding layer, an active layer, a first upper cladding layer, an Al x Ga 1-x As (0≦x≦1) diffusion stopping layer, a light guide layer, a second upper cladding layer, a cap layer, and an Al x Ga 1-x As (0≦x≦1) diffusion mask layer on a substrate; removing a portion of said diffusion mask layer to leave a stripe configuration mask and to expose portions of said cap layer at both sides of said stripe mask; successively depositing a mixed film containing Zn and a protection film on said diffusion stripe mask and said cap layer at both sides of said stripe mask; and diffusing Zn from said mixed film at both sides of the stripe mask through said cap, second upper cladding layer, and light guide layer and into said diffusion striping layer underlying said exposed portions of said cap layer.
Claim 7
Dependent Claim
75 words
A method of producing a laser diode as defined in claim 4, wherein said substrate comprises GaAs, said lower and said first and second upper cladding layers comprise Al 0 .25 Ga 0 .25 In 0 .5 P, said active layer comprises Ga 0 .5 In 0 .5 P, said light guide layer comprises a GaInP/AlGaInP superlattice, said cap layer comprises Ga 0 .5 In 0 .5 P, and said diffusion mask layer comprises GaAs.
Claim 8
Dependent Claim
30 words
A method of producing a laser diode as defined in claim 4 wherein said mixed film comprises ZnO and SiO 2 , and said protection layer comprises SiO 2 .
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-06-10 | 1994-12-10 | 1995-06-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-06-10 | 1998-12-10 | 1999-06-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-06-10 | 2002-12-10 | 2003-06-11 | $7700.00 | Window Closed / Lapsed |