Patent US5022959A successfully refreshed from Google Patents.
US5022959A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of wet etching by use of plasma etched carbonaceous masks
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1989-08-11
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Granted: 1991-06-11
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Expires: 2009-08-11
Abstract
Abstract A substrate having a film to be etched is coated with a carbon film. The carbon film is then coated with an organic mask. The mask is then patterned to expose portions of the carbon film. Plasma etching is then utilized to remove portions of the carbon film not covered by the mask, followed by wet etching to form a predetermined pattern in the film on the substrate.
Inventors
- 👤 Kenji Itoh
- 👤 Osamu Aoyagi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 10:42
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/69; H10P50/691; H10P50/692; H10P50/71; H10P50/73
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
205 words
A method for etching a film carried on a substrate to produce a predetermined pattern in the film, comprising the steps of: (a) placing the film-carrying substrate in a reaction chamber; (b) introducing a reactive gas comprising a hydrocarbon and a carrier gas into the reaction chamber; (c) inputting energy into the reaction chamber at a level sufficient to decompose the reactive gas and deposit a film of carbon atoms on the film to be patterned; (d) removing the carbon film-containing substrate from the reaction chamber; (e) forming an organic mask on top of the carbon film to selectively cover portions of the carbon film; (f) returning the mask-carbon-film, film to be patterned and the carrying substrate to the reaction chamber; (g) introducing an etchant gas containing oxygen or an oxygen compound into the reaction chamber; (h) activating the etchant gas to form a plasma which removes the portions of the carbon film not covered by the organic mask; (i) removing the substrate carrying the film to be patterned, etched carbon film and the mask from the reaction chamber; and (j) wet etching the film to be patterned in the areas not covered by the carbon film to produce said predetermined pattern in said film.
Claim 2
Independent Claim
205 words
A method for etching a film carried on a substrate to produce a predetermined pattern in the film, comprising the steps of: (a) placing the film-carrying substrate in a reaction chamber; (b) introducing a reactive gas comprising a hydrocarbon and a carrier gas into the reaction chamber; (c) inputting energy into the reaction chamber at a level sufficient to decompose the reactive gas and deposit a film of carbon atoms on the film to be patterned; (d) removing the carbon film-containing substrate from the reaction chamber; (e) forming an organic mask on top of the carbon film to selectively cover portions of the carbon film; (f) returning the mask-carbon-film, film to be patterned and the carrying substrate to the reaction chamber; (g) introducing an etchant gas containing oxygen or an oxygen compound into the reaction chamber; (h) activating the etchant gas to form a plasma which removes the portions of the carbon film not covered by the organic mask; (i) removing the substrate carrying the film to be patterned, etched carbon film and the mask from the reaction chamber; and (j) wet etching the film to be patterned in the areas not covered by the carbon film to produce said predetermined pattern in said film.
Claim 3
Dependent Claim
60 words
The method of etching described in claim 1, further including the step of returning the substrate carrying the etched patterned film and the carbon film not removed in step (h) to the reaction chamber, and introducing an etchant gas into said reaction chamber, and activating the etchant gas to form a plasma which removes the remainder of the carbon film.
Claim 4
Dependent Claim
21 words
The method of etching described in claim 1, wherein said hydrocarbon is selected from the group consisting of methane and ethylene.
Claim 5
Dependent Claim
36 words
The method of etching described in claim 1, wherein the etchant gas is selected from the group consisting of O 2 , NO 2 , NO, N 2 O, mixtures of oxygen and hydrogen, and air.
Claim 6
Dependent Claim
40 words
The method of etching described in claim 1, wherein the wet etching of step (j) is conducted with a wet etchant selected from the group consisting of hydrofluoric acid, phosphorous acid, hydrazine and mixtures of hydrofluoric acid and nitric acid.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-06-10 | 1994-12-10 | 1995-06-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-06-10 | 1998-12-10 | 1999-06-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-06-10 | 2002-12-10 | 2003-06-11 | $7700.00 | Window Closed / Lapsed |