Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
396 words
A charge transfer device for transferring charge in a charge transfer direction comprising: a semiconductor substrate of a first conductivity type; a semiconductor layer of a second conductivity type opposite form the first conductivity type disposed on the substrate and including a surface; a plurality of spaced apart channels of the first conductivity type disposed in the layer at the surface; a first electrically insulating film disposed on the surface; a plurality of spaced apart first electrodes disposed on the first electrically insulating film, each first electrode lying between an adjacent pair of the channels; a second electrically insulating film disposed on the first electrodes and the surface; a plurality of spaced apart second electrodes disposed on the second electrically insulating film opposite respective alternating channels, electrically insulated from the first electrodes by the second electrically insulating film, and overlapping both of the first electrodes that are adjacent to the respective channel, the overlapping by each second electrode of an adjacent electrode that lies in a direction along which electrical charges are transferred by the charge transfer device covering a first area and the overlapping by each second electrode of an adjacent first electrode that lies opposite the direction along which electrical charges are transferred by the charge transfer device covering a second area, the second are being larger than the first area; a third electrically insulating film disposed on the first and second electrodes and the second electrically insulating film; and a third electrode continuous in the direction along which electrical charges are transferred by the charge transfer device disposed on the third electrically insulating film opposite the alternating channels where no second electrode is disposed and opposite the first and second electrodes, wherein each second electrode is electrically connected to the adjacent first electrode that lies in the direction along which electrical charges are transferred by the charge transfer device as a first clock phase of the charge transfer device and each first electrode lying adjacent a second electrode opposite to the direction along which electrical charges are transferred by the charge transfer device is electrically connected to the third electrode as a second clock phase of the charge transfer device whereby the first and second clock phases are stably driven by first and second clock signals 180 degrees out of phase with each other produced by a clock driver including a resonant circuit.
Claim 2
Dependent Claim
396 words
A charge transfer device for transferring charge in a charge transfer direction comprising: a semiconductor substrate of a first conductivity type; a semiconductor layer of a second conductivity type opposite form the first conductivity type disposed on the substrate and including a surface; a plurality of spaced apart channels of the first conductivity type disposed in the layer at the surface; a first electrically insulating film disposed on the surface; a plurality of spaced apart first electrodes disposed on the first electrically insulating film, each first electrode lying between an adjacent pair of the channels; a second electrically insulating film disposed on the first electrodes and the surface; a plurality of spaced apart second electrodes disposed on the second electrically insulating film opposite respective alternating channels, electrically insulated from the first electrodes by the second electrically insulating film, and overlapping both of the first electrodes that are adjacent to the respective channel, the overlapping by each second electrode of an adjacent electrode that lies in a direction along which electrical charges are transferred by the charge transfer device covering a first area and the overlapping by each second electrode of an adjacent first electrode that lies opposite the direction along which electrical charges are transferred by the charge transfer device covering a second area, the second are being larger than the first area; a third electrically insulating film disposed on the first and second electrodes and the second electrically insulating film; and a third electrode continuous in the direction along which electrical charges are transferred by the charge transfer device disposed on the third electrically insulating film opposite the alternating channels where no second electrode is disposed and opposite the first and second electrodes, wherein each second electrode is electrically connected to the adjacent first electrode that lies in the direction along which electrical charges are transferred by the charge transfer device as a first clock phase of the charge transfer device and each first electrode lying adjacent a second electrode opposite to the direction along which electrical charges are transferred by the charge transfer device is electrically connected to the third electrode as a second clock phase of the charge transfer device whereby the first and second clock phases are stably driven by first and second clock signals 180 degrees out of phase with each other produced by a clock driver including a resonant circuit.
Claim 3
Dependent Claim
21 words
The charge transfer device of claim 1 wherein at least one of the first, second, and third electrodes is polycrystalline silicon.
Claim 4
Dependent Claim
30 words
The charge transfer device of claim 1 wherein at least one of the first, second, and third electrodes is selected from the group consisting of tungsten silicide and titanium silicide.
Claim 5
Dependent Claim
25 words
The charge transfer device of claim 1 wherein at least one of the first, second, and third electrically insulating films is an oxide of silicon.
Claim 6
Dependent Claim
23 words
The charge transfer device of claim 1 wherein at least one of the first, second, and third electrically insulating films is silicon nitride.