US4097885A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Compact, two-phase charge-coupled-device structure utilizing multiple layers of conductive material
Assignee: Fairchild Semiconductor Corp
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Filing: 1976-10-15
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Granted: 1978-06-27
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Expires: 1996-10-15
Abstract
Abstract An improved charge-coupled-device gate structure utilizes three depositions of electrically conductive material to form electrodes, thereby allowing fabrication of two-phase CCD gate structures occupying less wafer surface area and operating at faster speeds than conventional charge-coupled-device gate structures.
Inventors
- 👤 Lloyd R. Walsh
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 04:55
CPC Classifications
H; H10; H10D; H10D44/00; H10D44/01; H10D44/041; H10D44/40; H10D44/45; H10D44/472; H10D44/474
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
281 words
At least one semiconductor cell structure, a cell thereof comprising: a substrate formed from selected semiconductor material of one conductivity type; a region of first insulating material formed on a first surface of the substrate; a plurality of regions of first electrically conductive material disposed at selected intervals on the first insulating material; a plurality of regions of second insulating material formed on all portions of first electrically conductive material which are not in contact with the first insulating material; first and second spaced apart barrier regions formed in the substrate adjacent to the first insulating material and in regions of the substrate not overlaid by either one of the first electrically conductive material and the second insulating material, the first and second barrier regions being the same conductivity type as the substrate, but each having a different impurity concentration than the substrate; a region of second electrically conductive material disposed on that portion of the first insulating material over alternate barrier regions, and disposed on the second insulating material overlying selected portions of the first electrically conductive material; a region of third insulating material formed on all portions of second electrically conductive material which are not in contact with either one of the first and the second insulating materials; a region of third electrically conductive material disposed on that portion of the first insulating material over remaining barrier regions, and disposed on selected portions of the second and the third regions of insulating material; means for electrically connecting alternating regions of first electrically conductive material to the second electrically conductive material; and means for connecting the remaining regions of the first electrically conductive material to the third electrically conductive material.
Claim 2
Dependent Claim
281 words
At least one semiconductor cell structure, a cell thereof comprising: a substrate formed from selected semiconductor material of one conductivity type; a region of first insulating material formed on a first surface of the substrate; a plurality of regions of first electrically conductive material disposed at selected intervals on the first insulating material; a plurality of regions of second insulating material formed on all portions of first electrically conductive material which are not in contact with the first insulating material; first and second spaced apart barrier regions formed in the substrate adjacent to the first insulating material and in regions of the substrate not overlaid by either one of the first electrically conductive material and the second insulating material, the first and second barrier regions being the same conductivity type as the substrate, but each having a different impurity concentration than the substrate; a region of second electrically conductive material disposed on that portion of the first insulating material over alternate barrier regions, and disposed on the second insulating material overlying selected portions of the first electrically conductive material; a region of third insulating material formed on all portions of second electrically conductive material which are not in contact with either one of the first and the second insulating materials; a region of third electrically conductive material disposed on that portion of the first insulating material over remaining barrier regions, and disposed on selected portions of the second and the third regions of insulating material; means for electrically connecting alternating regions of first electrically conductive material to the second electrically conductive material; and means for connecting the remaining regions of the first electrically conductive material to the third electrically conductive material.
Claim 3
Dependent Claim
35 words
A semiconductor structure as in claim 1 wherein the first insulating material comprises a first and a second layer, the first layer being adjacent the substrate and the second layer being adjacent the first layer.
Claim 4
Dependent Claim
31 words
A semiconductor structure as in claim 2 wherein the substrate is silicon, the first layer of insulating material is silicon dioxide, and the second layer of insulating material is silicon nitride.
Claim 5
Dependent Claim
16 words
Structure as in claim 3 wherein the substrate and the barrier regions are P conductivity type.
Claim 6
Dependent Claim
16 words
Structure as in claim 3 wherein the substrate and the barrier regions are N conductivity type.
Claim 7
Dependent Claim
19 words
A semiconductor structure as in claim 1 wherein the barrier regions are formed in the substrate by ion implantation.
Claim 8
Dependent Claim
17 words
A semiconductor structure as in claim 1 wherein the barrier regions are periodically spaced in the substrate.
Claim 9
Dependent Claim
20 words
A semiconductor structure as in claim 1 wherein each of said regions of conductive material is formed from polycrystalline silicon.
Claim 10
Dependent Claim
18 words
A semiconductor structure as in claim 1 wherein the second and the third insulating materials are silicon dioxide.
Claim 11
Dependent Claim
31 words
A semiconductor structure as in claim 1 wherein the region of third electrically conductive material is disposed to completely overlie at least all of one region of first electrically conductive material.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-06-26 | 1981-12-26 | 1982-06-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-06-26 | 1985-12-26 | 1986-06-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-06-26 | 1989-12-26 | 1990-06-27 | $7700.00 | Window Closed / Lapsed |