US3795847A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method and apparatus for storing and transferring information
Assignee: General Electric Co
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Filing: 1973-03-26
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Granted: 1974-03-05
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Expires: 1993-03-26
Abstract
Abstract A method and apparatus for storing and transferring information employing a conductor-insulator-semiconductor (CIS) structure as the storage and transfer apparatus is disclosed herein. The CIS structure is initially charged to a predetermined voltage thereby forming a depletion region within the semiconductor beneath the insulated conductor. Minority carriers controllably generated within the semiconductor are stored at the surface of the semiconductor beneath the insulated conductor by an electric field existing in the depletion region, thus changing the predetermined voltage. Means for transferring the stored charge along the surface of the semiconductor are disclosed.
Inventors
- 👤 W Engeler
- 👤 J Tiemann
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 12:39
CPC Classifications
G; G11; G11C; G11C19/00; G11C19/28; G11C19/282; H; H10; H10D; H10D44/00; H10D44/40; H10D44/45
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
129 words
An information storage and transfer apparatus comprising: a plurality of interdigitated closely spaced conductor members insulatingly overlying a semiconductor substrate having at least one information storage channel therein, said plurality of conductor members including first, second and third groups of conductors; a first common terminal on one side of said storage channel interconnecting members of said first group; a second common terminal on the other side of said storage channel interconnecting members of said second group; a plurality of contacts each connected to a conductor member of the third group, said contacts positioned on both sides of said information storage channel with each succeeding contact located on alternate sides of said storage channel; and means for sequentially forming adjoining depletion regions in said semiconductor substrate under selected conductor members.
Claim 2
Dependent Claim
129 words
An information storage and transfer apparatus comprising: a plurality of interdigitated closely spaced conductor members insulatingly overlying a semiconductor substrate having at least one information storage channel therein, said plurality of conductor members including first, second and third groups of conductors; a first common terminal on one side of said storage channel interconnecting members of said first group; a second common terminal on the other side of said storage channel interconnecting members of said second group; a plurality of contacts each connected to a conductor member of the third group, said contacts positioned on both sides of said information storage channel with each succeeding contact located on alternate sides of said storage channel; and means for sequentially forming adjoining depletion regions in said semiconductor substrate under selected conductor members.
Claim 3
Dependent Claim
40 words
The information storage and transfer apparatus of claim 1 further comprising means for interconnecting the contacts of said third group along at least one side of said storage channel with a common electrical terminal insulatingly overlying said first common terminal.
Claim 4
Dependent Claim
20 words
The information storage and transfer apparatus of claim 2 wherein said means for forming depletion regions includes three-phase voltage signals.
References Cited (Backward Citations)
US3541543A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-03-04 | 1977-09-03 | 1978-03-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-03-04 | 1981-09-03 | 1982-03-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-03-04 | 1985-09-03 | 1986-03-05 | $7700.00 | Window Closed / Lapsed |