Patent US5019877A successfully refreshed from Google Patents.
US5019877A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Field effect transistor
Assignee: Mitsubishi Electric Corp
•
Filing: 1990-03-15
•
Granted: 1991-05-28
•
Expires: 2010-03-15
Abstract
Abstract A field effect transistor for microwave and millimeter wave frequencies includes a plurality of feeding points on a gate finger extending on a substrate, an airbridge wiring structure which connects adjacent feeding points with each other, and a gate pad beyond the source and drain electrodes connected with the gate finger through the airbridge. The relatively wide gate connection reduces gate resistance. The gate connection does not cross the source and drain electrodes, reducing capacitance. The reduced resistance and capacitance significantly improve the high frequency noise figure.
Inventors
- 👤 Kenji Hosogi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 06:35
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/20; H10D64/27; H10D64/311; H10D64/411
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
114 words
A field effect transistor comprising: a substrate containing a conductive region; source and drain electrodes disposed on said substrate on said conductive region; a gate finger electrode disposed on said substrate at the conductive region between said source and drain electrodes; a gate pad disposed on the substrate beyond said source and drain electrodes for receiving and transmitting signals to and from said gate finger electrode; a plurality of spaced apart feeding points disposed on said gate finger electrode for receiving and transmitting signals to and from said gate finger electrode; and an airbridge gate connection spaced from said substrate and electrically connected to each of said feeding points and to said gate pad.
Claim 2
Dependent Claim
114 words
A field effect transistor comprising: a substrate containing a conductive region; source and drain electrodes disposed on said substrate on said conductive region; a gate finger electrode disposed on said substrate at the conductive region between said source and drain electrodes; a gate pad disposed on the substrate beyond said source and drain electrodes for receiving and transmitting signals to and from said gate finger electrode; a plurality of spaced apart feeding points disposed on said gate finger electrode for receiving and transmitting signals to and from said gate finger electrode; and an airbridge gate connection spaced from said substrate and electrically connected to each of said feeding points and to said gate pad.
Claim 3
Dependent Claim
21 words
The field effect transistor as defined in claim 1 wherein said gate connection does not cross the source or drain electrode.
Claim 4
Dependent Claim
24 words
The field effect transistor as defined in claim 1 wherein said gate connection is closer to the drain electrode than to the source electrode.
Claim 5
Dependent Claim
30 words
The field effect transistor as defined in claim 1 wherein the gate connection between said gate finger electrode and said gate pad is centrally disposed relative to said feeding points.
Claim 6
Dependent Claim
49 words
The field effect transistor as defined in claim 1 wherein the feeding points and gate finger electrode lie along a straight line, said gate pad is disposed at one end of the line, and the gate connection between said gate finger and said gate pad lies along the line.
Claim 7
Dependent Claim
27 words
The field effect transistor as defined in claim 1 wherein said substrate is GaAs and said gate finger electrode forms a Schottky barrier with the conducting region.
Claim 8
Dependent Claim
25 words
The field effect transistor as defined in claim 1 wherein said gate finger electrode is closer to the source electrode than to the drain electrode.
Claim 9
Dependent Claim
26 words
The field effect transistor as defined in claim 1 wherein the source and drain electrodes and conductive region are configured as a high mobility electron transistor.
References Cited (Backward Citations)
EP0025566A2
Cited
EP0166112A2
Cited
EP0203225A2
Cited
US4871687A
Cited
US4794093A
Cited
US4924289A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-05-27 | 1994-11-26 | 1995-05-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-05-27 | 1998-11-26 | 1999-05-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-05-27 | 2002-11-26 | 2003-05-28 | $7700.00 | Window Closed / Lapsed |