Patent US5017984A successfully refreshed from Google Patents.
US5017984A
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Amorphous silicon thin film transistor array
Assignee: Seiko Precision Inc
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Filing: 1990-06-04
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Granted: 1991-05-21
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Expires: 2010-06-04
Abstract
Abstract An amorphous silicon thin film transistor array substrate has a gate insulating layer and an amorphous silicon layer formed on gate wiring. A pattern of a protective insulating layer having a stepped edge is formed on the amorphous silicon layer. An upper electrode of the same material as the source electrode and the drain electrode are formed on the protective insulating layer to cover the stepped edge of the protective insulating layer. A hold capacitance is formed by connecting the upper electrode to a pixel electrode on the substrate.
Inventors
- 👤 Sakae Tanaka
- 👤 Yoshiaki Watanabe
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 00:32
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6704; G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/136; G02F1/1362; G02F1/1368; H10D30/6729; H10D30/673; H10D30/6732; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6746; G02F1/136213; G02F2202/00; G02F2202/10; G02F2202/103
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
182 words
An amorphous silicon thin film transistor array substrate comprising: a plurality of amorphous silicon thin film transistors on a substrate, each of said amorphous silicon thin film transistors having at least a gate, a source electrode and a drain electrode, a gate wiring on said substrate interconnecting said gates, said gate wiring forming a first electrode of a hold capacitance, a gate insulating layer on said gate wiring, an amorphous silicon layer on said gate insulating layer, a protective insulating layer having an edge that defines a step due to the thickness thereof, said protective insulating layer being located on said amorphous silicon layer, an upper electrode on said protective insulating layer and covering said step, said upper electrode consisting of at least an n-type silicon layer and forming a second electrode of said hold capacitance, and a pixel electrode connected to said upper electrode and to one of the electrodes of one of said transistors, said pixel electrode being of a material different from said upper electrode, said capacitance being formed substantially solely by said gate wiring and said upper electrode.
Claim 2
Dependent Claim
182 words
An amorphous silicon thin film transistor array substrate comprising: a plurality of amorphous silicon thin film transistors on a substrate, each of said amorphous silicon thin film transistors having at least a gate, a source electrode and a drain electrode, a gate wiring on said substrate interconnecting said gates, said gate wiring forming a first electrode of a hold capacitance, a gate insulating layer on said gate wiring, an amorphous silicon layer on said gate insulating layer, a protective insulating layer having an edge that defines a step due to the thickness thereof, said protective insulating layer being located on said amorphous silicon layer, an upper electrode on said protective insulating layer and covering said step, said upper electrode consisting of at least an n-type silicon layer and forming a second electrode of said hold capacitance, and a pixel electrode connected to said upper electrode and to one of the electrodes of one of said transistors, said pixel electrode being of a material different from said upper electrode, said capacitance being formed substantially solely by said gate wiring and said upper electrode.
Claim 3
Dependent Claim
246 words
An amorphous silicon thin film transistor array substrate comprising: a plurality of amorphous silicon thin film transistors on a substrate, each of said amorphous silicon thin film transistors having at least a gate, a source electrode and a drain electrode, a hold capacitance, a gate wiring on said substrate interconnecting said gates, a portion of said gate wiring defining a first electrode of said hold capacitance, a gate insulating layer on said portion of said gate wiring, an amorphous silicon layer on said gate insulating layer overlaying said portion of said gate wiring, a protective insulating layer having an edge that defines a step due to the thickness thereof, said protective insulating layer being located on said amorphous silicon layer with a portion thereof overlying said portion of said gate wiring and with said step displaced from alignment with said portion of said gate wiring, an upper electrode on said protective insulating layer and covering said step, said upper electrode consisting of at least an n-type silicon layer, a portion of said upper electrode being aligned with said portion of said gate wiring and forming a second electrode of said hold capacitance, and a pixel electrode connected to said upper electrode, said pixel electrode being of a material different from said upper electrode, said capacitance being formed substantially solely by said gate wiring and said upper electrode, the connection between the pixel electrode and upper electrode constituting the only direct electrical connection to said upper electrode.
Claim 4
Dependent Claim
246 words
An amorphous silicon thin film transistor array substrate comprising: a plurality of amorphous silicon thin film transistors on a substrate, each of said amorphous silicon thin film transistors having at least a gate, a source electrode and a drain electrode, a hold capacitance, a gate wiring on said substrate interconnecting said gates, a portion of said gate wiring defining a first electrode of said hold capacitance, a gate insulating layer on said portion of said gate wiring, an amorphous silicon layer on said gate insulating layer overlaying said portion of said gate wiring, a protective insulating layer having an edge that defines a step due to the thickness thereof, said protective insulating layer being located on said amorphous silicon layer with a portion thereof overlying said portion of said gate wiring and with said step displaced from alignment with said portion of said gate wiring, an upper electrode on said protective insulating layer and covering said step, said upper electrode consisting of at least an n-type silicon layer, a portion of said upper electrode being aligned with said portion of said gate wiring and forming a second electrode of said hold capacitance, and a pixel electrode connected to said upper electrode, said pixel electrode being of a material different from said upper electrode, said capacitance being formed substantially solely by said gate wiring and said upper electrode, the connection between the pixel electrode and upper electrode constituting the only direct electrical connection to said upper electrode.
Claim 5
Dependent Claim
25 words
The amorphous silicon thin film transistor array substrate of claim 2 wherein a portion of said pixel electrode overlays a portion of said upper electrode.
Claim 6
Dependent Claim
23 words
The amorphous silicon thin film transistor array substrate of claim 3 wherein said portion of said pixel electrode is displaced from said step.
Claim 7
Dependent Claim
33 words
The amorphous silicon thin film transistor array substrate of claim 3 wherein a further portion of said pixel electrode overlays a portion of said one of said electrodes of one of said transistors.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-05-20 | 1994-11-19 | 1995-05-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-05-20 | 1998-11-19 | 1999-05-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-05-20 | 2002-11-19 | 2003-05-21 | $7700.00 | Window Closed / Lapsed |