US5013918A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Multicolor infrared photodetector
Assignee: United States Department of the Army
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Filing: 1990-04-02
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Granted: 1991-05-07
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Expires: 2010-04-02
Abstract
Abstract A multicolor infrared detection device comprising a number of doped quantumell structural units. Each unit consists of a thick well and a thin well separated by a thin barrier. This arrangement produces strong coupling. Infrared radiation incident on the device gives rise to intersubband absorption. For each transition a photosignal results which allows the detection of a plurality of incident frequencies.
Inventors
- 👤 Kwong-Kit Choi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 05:30
CPC Classifications
B; B82; B82Y; B82Y20/00; H; H10; H10F; H10F77/00; H10F77/10; H10F77/14; H10F77/146; H10F77/147; Y; Y02; Y02E; Y02E10/00; Y02E10/50
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
119 words
An infrared-radiation detection device comprising a semiconductor superlattice consisting of a plurality of quantum well units, each unit composed of a thick barrier, a thick quantum well having two confined states E 1 and E 2 , a thin barrier, and a thin quantum well having one confined state E 1 , adjusted to be very close to E 2 when the wells are considered in isolation, such that the thick quantum well and the thin quantum well are brought close enough together that the wells become coupled and the level structure becomes common to both wells, and contact means for electrically biasing said superlattice and for sensing an electrical signal in response to radiation incident on said superlattice.
Claim 2
Dependent Claim
119 words
An infrared-radiation detection device comprising a semiconductor superlattice consisting of a plurality of quantum well units, each unit composed of a thick barrier, a thick quantum well having two confined states E 1 and E 2 , a thin barrier, and a thin quantum well having one confined state E 1 , adjusted to be very close to E 2 when the wells are considered in isolation, such that the thick quantum well and the thin quantum well are brought close enough together that the wells become coupled and the level structure becomes common to both wells, and contact means for electrically biasing said superlattice and for sensing an electrical signal in response to radiation incident on said superlattice.
Claim 3
Dependent Claim
29 words
An infrared-radiation detection device as defined in claim 1 in which a forward bias moves said energy levels E 2 and E 3 closer to level E 1 .
Claim 4
Dependent Claim
29 words
An infrared-radiation detection device as defined in claim 1 in which a reverse bias moves said energy levels E 2 and E 3 further away from E 1 .
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-05-06 | 1994-11-05 | 1995-05-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-05-06 | 1998-11-05 | 1999-05-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-05-06 | 2002-11-05 | 2003-05-07 | $7700.00 | Window Closed / Lapsed |