US4822992A
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Wavelength conversion using self electrooptic effect devices
Assignee: Nokia Bell Labs
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Filing: 1987-12-31
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Granted: 1989-04-18
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Expires: 2007-12-31
Abstract
Abstract Information borne by an optical signal at a first wavelength is transferred intact to another optical signal at a second wavelength and vice versa via an optoelectronic circuit employing quantum well devices connected serially to facilitate self electrooptic effects therein. The optoelectronic circuit accepts two input signals and provides two output signals wherein an input signal and its corresponding output signal are at the same wavelength. Bidirectional information transfer with bidirectional wavelength conversion is permitted by the optoelectronic circuit.
Inventors
- 👤 Israel Bar-Joseph
- 👤 Daniel S. Chemla
- 👤 David A. B. Miller
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 21:04
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/01; G02F1/015; G02F1/017; G02F1/01716; B; B82; B82Y; B82Y20/00; G02F2/00; G02F2/004; G02F3/00; G02F3/02; G02F3/028
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
120 words
An optical device comprising first means including a quantum well region and second means including a quantum well region, said first means connected electrically in series with said second means for electrically controlling an optical absorption in the quantum well region of said second means, said second means for changing said optical absorption in response to said electrically controlling by said first means, wherein the improvement comprises said quantum well region of said first means including semiconductor material having a predetermined optical response characteristic at a first wavelength, said quantum well region of said second means including semiconductor material having said predetermined optical response characteristic at a second wavelength, and said first and second wavelengths are different from each other.
Claim 2
Dependent Claim
120 words
An optical device comprising first means including a quantum well region and second means including a quantum well region, said first means connected electrically in series with said second means for electrically controlling an optical absorption in the quantum well region of said second means, said second means for changing said optical absorption in response to said electrically controlling by said first means, wherein the improvement comprises said quantum well region of said first means including semiconductor material having a predetermined optical response characteristic at a first wavelength, said quantum well region of said second means including semiconductor material having said predetermined optical response characteristic at a second wavelength, and said first and second wavelengths are different from each other.
Claim 3
Dependent Claim
23 words
The optical device defined in claim 1 wherein said first means includes a p-i-n diode and said second means includes a p-i-n diode.
Claim 4
Dependent Claim
16 words
The optical device defined in claim 2 wherein the semiconductor material is chosen from Group III-V.
Claim 5
Dependent Claim
49 words
The optical device defined in claim 3 wherein the semiconductor material of said quantum well region in said first means consists of compounds selected from an AlGaAs/GaAs system and the semiconductor material of said quantum well region in said second means consists of compounds selected from an InGaAs/InP system.
Claim 6
Dependent Claim
49 words
The optical device defined in claim 3 wherein the semiconductor material of said quantum well region in said first means consists of compounds selected from an InGaAs/InGaAsP system and the semiconductor material of said quantum well region in said second means consists of compounds selected from an InGaAsP/InP system.
Claim 7
Dependent Claim
31 words
The optical device defined in claim 1 wherein the optical device further includes said second means for electrically controlling an optical absorption in the quantum well region of said first means.
Claim 8
Dependent Claim
23 words
The optical device defined in claim 6 wherein said first means includes a p-i-n diode and said second means includes a p-i-n diode.
Claim 9
Dependent Claim
16 words
The optical device defined in claim 7 wherein the semiconductor material is chosen from Group III-V.
Claim 10
Dependent Claim
49 words
The optical device defined in claim 8 wherein the semiconductor material of said quantum well region in said first means consists of compounds selected from an AlGaAs/GaAs system and the semiconductor material of said quantum well region in said second means consists of compounds selected from an InGaAs/InP system.
Claim 11
Dependent Claim
49 words
The optical device defined in claim 8 wherein the semiconductor material of said quantum well region in said first means consists of compounds selected from an InGaAs/InGaAsP system and the semiconductor material of said quantum well region in said second means consists of compounds selected from an InGaAsP/InP system.
Claim 12
Dependent Claim
32 words
The optical device defined in claim 1 wherein the optical device further includes said second means for electrically controlling an index of refraction in the quantum well region of said first means.
Claim 13
Dependent Claim
122 words
An optical device comprising first means including a quantum well region and second means including a quantum well region, said first means connected electrically in series with said second means for electrically controlling an index of refraction in the quantum well region of said second means, said second means for changing said index of refraction in response to said electrically controlling by said first means, wherein the improvement comprises said quantum well region of said first means including semiconductor material having a predetermined optical response characteristic at a first wavelength, said quantum well region of said second means including semiconductor material having said predetermined optical response characteristic at a second wavelength, and said first and second wavelengths are different from each other.
Claim 14
Dependent Claim
122 words
An optical device comprising first means including a quantum well region and second means including a quantum well region, said first means connected electrically in series with said second means for electrically controlling an index of refraction in the quantum well region of said second means, said second means for changing said index of refraction in response to said electrically controlling by said first means, wherein the improvement comprises said quantum well region of said first means including semiconductor material having a predetermined optical response characteristic at a first wavelength, said quantum well region of said second means including semiconductor material having said predetermined optical response characteristic at a second wavelength, and said first and second wavelengths are different from each other.
Claim 15
Dependent Claim
23 words
The optical device defined in claim 12 wherein said first means includes a p-i-n diode and said second means includes a p-i-n diode.
Claim 16
Dependent Claim
16 words
The optical device defined in claim 13 wherein the semiconductor material is chosen from Group III-V.
Claim 17
Dependent Claim
49 words
The optical device defined in claim 14 wherein the semiconductor material of said quantum well region in said first means consists of compounds selected from an AlGaAs/GaAs system and the semiconductor material of said quantum well region in said second means consists of compounds selected from an InGaAs/InP system.
Claim 18
Dependent Claim
49 words
The optical device defined in claim 14 wherein the semiconductor material of said quantum well region in said first means consists of compounds selected from an InGaAs/InGaAsP system and the semiconductor material of said quantum well region in said second means consists of compounds selected from an InGaAsP/InP system.
Claim 19
Dependent Claim
31 words
The optical device defined in claim 12 wherein the optical device further includes said second means for electrically controlling an optical absorption in the quantum well region of said first means.
Claim 20
Dependent Claim
32 words
The optical device defined in claim 12 wherein the optical device further includes said second means for electrically controlling an index of refraction in the quantum well region of said first means.
Claim 21
Dependent Claim
23 words
The optical device defined in claim 17 wherein said first means includes a p-i-n diode and said second means includes a p-i-n diode.
Claim 22
Dependent Claim
17 words
The optical device defined in claim 19 wherein the semiconductor material is chosen from the Group III-V.
Claim 23
Dependent Claim
49 words
The optical device defined in claim 20 wherein the semiconductor material of said quantum well region in said first means consists of compounds selected from an AlGaAs/GaAs system and the semiconductor material of said quantum well region in said second means consists of compounds selected from an InGaAs/InP system.
Claim 24
Dependent Claim
49 words
The optical device defined in claim 20 wherein the semiconductor material of said quantum well region in said first means consists of compounds selected from an InGaAs/InGaAsP system and the semiconductor material of said quantum well region in said second means consists of compounds selected from an InGaAsP/InP system.
References Cited (Backward Citations)
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