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Patent US5013690A successfully refreshed from Google Patents.
US5013690A
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Method for deposition of silicon films from azidosilane sources
Assignee: Versum Materials US LLC
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Filing: 1990-02-01
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Granted: 1991-05-07
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Expires: 2010-02-01
Abstract
Abstract A low temperature chemical vapor deposition process comprising heating in a chemical vapor depositon reactor a substrate upon which deposition is desired to a temperature of from about 550° C. to about 750° C. in a chemical vapor deposition reactor having a pressure of from about 0.1 torr to approximately atmospheric pressure, introducing into the reactor a silicon-containing feed and optionally an oxygen containing feed, said silicon containing feed consisting essentially of one or more compounds having the general formula ##STR1## wherein: R 1 , R 2 , R 3 and R 4 are hydrogen, azido or C-2 to C-6 alkyl, aryl or C-7 to C-10 aralkyl groups, at least one but not more than three of R 1 , R 2 , R 3 and R 4 , being azido, and maintaining the temperature and pressure to cause a film of silicon nitride, silicon oxynitride or silicon dioxide to deposit is disclosed.
Inventors
- 👤 Arthur K. Hochberg
- 👤 David L. O'Meara
- 👤 David A. Roberts
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 21:00
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/694; H10P14/6943; H10P14/69433; Y; Y10; Y10S; Y10S148/00; Y10S148/122; Y10S438/00; Y10S438/934
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
166 words
A low temperature chemical vapor deposition process for preparing silicon films having a sheet resistance of approximately 1×10 3 Ω/square comprising the steps of: heating in a chemical vapor deposition reactor a substrate upon which deposition is desired to a temperature of from about 550° C. to about 750° C.; maintaining in the reactor a pressure of from about 0.1 torr to about 1 atmosphere during the process; introducing into the reactor a volatile silicon-containing feed, said silicon containing feed consisting essentially of one or more compounds having the general formula ##STR4## wherein: R 1 , R 2 , and R 3 are hydrogen, azido or 1 to 6 carbon alkyl, phenyl or 7 to 10 carbon alkaryl groups, at least one of R 1 , R 2 , and R 3 , being 1 to 6 carbon alkyl, phenyl or 7 to 10 carbon alkaryl, and maintaining the temperature and pressure in said ranges to cause a film of silicon to deposit on said substrate.
Claim 2
Dependent Claim
166 words
A low temperature chemical vapor deposition process for preparing silicon films having a sheet resistance of approximately 1×10 3 Ω/square comprising the steps of: heating in a chemical vapor deposition reactor a substrate upon which deposition is desired to a temperature of from about 550° C. to about 750° C.; maintaining in the reactor a pressure of from about 0.1 torr to about 1 atmosphere during the process; introducing into the reactor a volatile silicon-containing feed, said silicon containing feed consisting essentially of one or more compounds having the general formula ##STR4## wherein: R 1 , R 2 , and R 3 are hydrogen, azido or 1 to 6 carbon alkyl, phenyl or 7 to 10 carbon alkaryl groups, at least one of R 1 , R 2 , and R 3 , being 1 to 6 carbon alkyl, phenyl or 7 to 10 carbon alkaryl, and maintaining the temperature and pressure in said ranges to cause a film of silicon to deposit on said substrate.
Claim 3
Dependent Claim
23 words
The process of claim 1 wherein the silicon containing feed consists essentially of ethyltriazidosilane and the temperature range is above about 560° C.
Claim 4
Dependent Claim
10 words
The process of claim 1 wherein the azidosilane is diethyldiazidosilane.
Claim 5
Dependent Claim
10 words
The process of claim 1 wherein the azidosilane is triethylazidosilane.
Claim 6
Dependent Claim
110 words
A chemical vapor deposition process comprising the steps of: heating in a chemical vapor deposition reactor a substrate upon which deposition is desired to a temperature of from above about 560° C.; establishing in the chemical vapor deposition reactor a pressure of from approximately 1±0.9 torr to approximately atmospheric pressure and maintaining such pressure during the process; introducing an alkylazidosilane or an aralkylazidosilane wherein the alkyl-, aryl- or aralkyl- moiety comprises from 1-6 carbon alkyl, phenyl or 7 to 10 carbon alkaryl; and maintaining the temperature and pressure in said ranges cause a film of silicon having a sheet resistance of approximately 1×10 3 Ω/square to deposit on said substrate.
Claim 7
Dependent Claim
110 words
A chemical vapor deposition process comprising the steps of: heating in a chemical vapor deposition reactor a substrate upon which deposition is desired to a temperature of from above about 560° C.; establishing in the chemical vapor deposition reactor a pressure of from approximately 1±0.9 torr to approximately atmospheric pressure and maintaining such pressure during the process; introducing an alkylazidosilane or an aralkylazidosilane wherein the alkyl-, aryl- or aralkyl- moiety comprises from 1-6 carbon alkyl, phenyl or 7 to 10 carbon alkaryl; and maintaining the temperature and pressure in said ranges cause a film of silicon having a sheet resistance of approximately 1×10 3 Ω/square to deposit on said substrate.
Claim 8
Dependent Claim
25 words
The process of claim 5 wherein the reaction is carried out in a vacuum having a pressure of from about 0.1 to about 1.5 torr.
Claim 9
Dependent Claim
30 words
The process of claim 6 further comprising activating the reagents in the vicinity of the substrate by plasma, ion beam, electron beam or laser energy to enhance chemical vapor deposition.
Claim 10
Dependent Claim
21 words
The process of claim 5 wherein the reaction is carried out in a vacuum having a pressure of approximately one torr.
Claim 11
Dependent Claim
30 words
The process of claim 5 further comprising activating the reagents in the vicinity of the substrate by plasma, ion beam, electron beam or laser energy to enhance chemical vapor deposition.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1994-05-06 | 1994-11-05 | 1995-05-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-05-06 | 1998-11-05 | 1999-05-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-05-06 | 2002-11-05 | 2003-05-07 | $7700.00 | Window Closed / Lapsed |