Patent JPS6350641A successfully refreshed from Google Patents.
Patent US5013673A successfully refreshed from Google Patents.
US5013673A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Implantation method for uniform trench sidewall doping by scanning velocity correction
Assignee: Panasonic Holdings Corp
•
Filing: 1990-06-26
•
Granted: 1991-05-07
•
Expires: 2010-06-26
Abstract
Abstract An ion implantation method comprising doping a trench sidewall formed in the surface of a semiconductor substrate, with impurities by intermittently rotating step ion implantation carried out in the state that said sidewall is angled with respect to an ion beam, wherein; the amount of ion implantation to said sidewall is made uniform by varying the scanning velocity of the ion beam on the surface of said semiconductor substrate, at the position near to, and the position distant from, the upstream side of the beam applied to a position at which said surface of semiconductor substrate is inclined with respect to the beam. Also disclosed is a method of manufacturing a semiconductor device making use of such an ion implantation method.
Inventors
- 👤 Genshu Fuse
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 10:42
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/10; H10W10/17; H10P; H10P30/00; H10P30/20; H10P30/222; H10W10/01; H10W10/011; H10W10/014; H10W10/0148
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
103 words
An ion implantation method comprising doping a trench sidewall formed in the surface of a semiconductor substrate, with impurities by intermittently rotating step ion implantation carried out in the state that said sidewall is angled with respect to an ion beam, wherein; the amount of ion implantation to said sidewall is made uniform by varying the scanning velocity of the ion beam on the surface of said semiconductor substrate, at the position near to, and the position distant from, the upstream side of the beam applied to a position at which said surface of semiconductor substrate is inclined with respect to the beam.
Claim 2
Dependent Claim
103 words
An ion implantation method comprising doping a trench sidewall formed in the surface of a semiconductor substrate, with impurities by intermittently rotating step ion implantation carried out in the state that said sidewall is angled with respect to an ion beam, wherein; the amount of ion implantation to said sidewall is made uniform by varying the scanning velocity of the ion beam on the surface of said semiconductor substrate, at the position near to, and the position distant from, the upstream side of the beam applied to a position at which said surface of semiconductor substrate is inclined with respect to the beam.
Claim 3
Dependent Claim
77 words
An ion implantation method according to claim 1, wherein said scanning velocity is varied in the manner that the scanning velocity of the beam at the position of θ+α is varied in a ratio of sin (θ+α)/sin θ, relative to the beam scanning velocity for the ions uniformly implanted to a plane at an angle of θ, where θ is an ion implantation angle and α is an angle error produced when the beam scans the surface.
Claim 4
Dependent Claim
61 words
An ion implantation method according to claim 2, wherein the beam scanning velocity for the ions uniformly implanted at an angle of θ is a scanning velocity obtained by multiplying a scanning velocity correction coefficient for correcting reflection from a trench sidewall, depending on the implantation angle, and a scanning velocity correction coefficient for correcting a non-uniformity produced by beam spread.
Claim 5
Independent Claim
137 words
A method of manufacturing a semiconductor device, comprising the steps of; forming a trench in a semiconductor substrate by etching; forming a doped layer on a sidewall of the trench thus formed, which is doped with impurities by intermittently rotating step ion implantation carried out with an angle between an ion beam and said sidewalls, while making uniform the amount of ion implantation to said sidewall by varying the scanning velocity of the ion beam on the surface of said semiconductor substrate, at the position near to, and the position distant from, the upstream side of the beam applied to a position at which said surface of semiconductor substrate is inclined with respect to the beam; and forming a dielectric film on the surface of said doped layer, and embedding a polycrystalline film to form an electrode.
Claim 6
Independent Claim
137 words
A method of manufacturing a semiconductor device, comprising the steps of; forming a trench in a semiconductor substrate by etching; forming a doped layer on a sidewall of the trench thus formed, which is doped with impurities by intermittently rotating step ion implantation carried out with an angle between an ion beam and said sidewalls, while making uniform the amount of ion implantation to said sidewall by varying the scanning velocity of the ion beam on the surface of said semiconductor substrate, at the position near to, and the position distant from, the upstream side of the beam applied to a position at which said surface of semiconductor substrate is inclined with respect to the beam; and forming a dielectric film on the surface of said doped layer, and embedding a polycrystalline film to form an electrode.
Claim 7
Dependent Claim
89 words
A method of manufacturing a semiconductor device according to claim 4, wherein said doped layer is formed on the trench sidewall by varying said scanning velocity in the manner that the scanning velocity of the beam at the position of θ+α is varied in a ratio of sin (θ+α)/sin θ, relative to the beam scanning velocity for the ions uniformly implanted to a plane at an angle of θ, where θ is an ion implantation angle and α is an angle error produced when the beam scans the surface.
Claim 8
Dependent Claim
64 words
A method of manufacturing a semiconductor device according to claim 4, wherein the beam scanning velocity for the ions uniformly implanted at an angle of θ is a scanning velocity obtained by multiplying a scanning velocity correction coefficient for correcting reflection from a trench sidewall, depending on the implantation angle, and a scanning velocity correction coefficient for correcting a non-uniformity produced by beam spread.
Claim 9
Independent Claim
128 words
A method of manufacturing a semiconductor device, comprising the steps of; forming a trench in a semiconductor substrate; forming a doped layer on a sidewall of the trench thus formed, which is doped with impurities by intermittently rotating step ion implantation carried out with an angle between an ion beam and said sidewalls, while making uniform the amount of ion implantation to said sidewall by varying the scanning velocity of the ion beam on the surface of said semiconductor substrate, at the position near to, and the position distant from, the upstream side of the beam applied to a position at which said surface of semiconductor substrate is inclined with respect to the beam; and embedding a dielectric film in said trench to form a device isolation region.
Claim 10
Independent Claim
128 words
A method of manufacturing a semiconductor device, comprising the steps of; forming a trench in a semiconductor substrate; forming a doped layer on a sidewall of the trench thus formed, which is doped with impurities by intermittently rotating step ion implantation carried out with an angle between an ion beam and said sidewalls, while making uniform the amount of ion implantation to said sidewall by varying the scanning velocity of the ion beam on the surface of said semiconductor substrate, at the position near to, and the position distant from, the upstream side of the beam applied to a position at which said surface of semiconductor substrate is inclined with respect to the beam; and embedding a dielectric film in said trench to form a device isolation region.
Claim 11
Dependent Claim
80 words
A method of manufacturing a semiconductor device according to claim 7, wherein said scanning velocity is varied in the manner that the scanning velocity of the beam at the position of θ+α is varied in a ratio of sin (θ+α)/sin θ, relative to the beam scanning velocity for the ions uniformly implanted to a plane at an angle of θ, where θ is an ion implantation angle and α is an angle error produced when the beam scans the surface.
Claim 12
Dependent Claim
64 words
A method of manufacturing a semiconductor device according to claim 7, wherein the beam scanning velocity for the ions uniformly implanted at an angle of θ is a scanning velocity obtained by multiplying a scanning velocity correction coefficient for correcting reflection from a trench sidewall, depending on the implantation angle, and a scanning velocity correction coefficient for correcting a non-uniformity produced by beam spread.
References Cited (Backward Citations)
US3908262A
Cited
US3914857A
Cited
JPS5272585A
Cited
US4437226A
Cited
JPS5868073A
Cited
US4525919A
Cited
US4921815A
Cited
US4824793A
Cited
US4918027A
Cited
US4756793A
Cited
JPS62274621A
Cited
JPS6421919A
Cited
JPH0234939A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-05-06 | 1994-11-05 | 1995-05-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-05-06 | 1998-11-05 | 1999-05-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-05-06 | 2002-11-05 | 2003-05-07 | $7700.00 | Window Closed / Lapsed |