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Patent US5012858A successfully refreshed from Google Patents.
US5012858A
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US
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Method of cooling a semiconductor device with a cooling unit, using metal sherbet between the device and the cooling unit
Assignee: Fujitsu Ltd
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Filing: 1989-04-10
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Granted: 1991-05-07
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Expires: 2009-04-10
Abstract
Abstract A method of cooling a semiconductor device with a cooling unit, using a metal sherbet, which is metal being in a state of a mixed phase consisting of a liquid phase and a solid phase, as a heat conducting body put between the cooling unit and the semiconductor device for transferring heat generated in the semiconductor device to the cooling unit. The metal sherbet is metal, such as In-Ga binary system, in which solids of In-Ga solid solution are dispersed in an In and Ga liquid at a temperature obtained under normal operations of the semiconductor device and the cooling unit.
Inventors
- 👤 Katsuhide Natori
- 👤 Isao Watanabe
- 👤 Koji Katsuyama
- 👤 Isao Kawamura
- 👤 Haruhiko Yamamoto
- 👤 Takeshi Nagai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 07:35
CPC Classifications
H; H10; H10W; H10W40/00; H10W40/70; H10W40/73; H10W40/735; H10W72/00; H10W72/071; H10W72/072; H10W72/07251; H10W72/20; H10W72/851; H10W72/874; H10W72/877
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
81 words
In a method for cooling a semiconductor device using heat transfer means, the improvement comprising the use of a heat conducting body disposed between said semiconductor device and said heat transfer means, said heat conducting body being an alloy which is in the state of a two-phase field of liquid and solid uniformly throughout the body when the semiconductor device is at operating temperature and having a coefficient of viscosity greater than 3,000 centipoise at a temperature less than 40° C.
Claim 2
Dependent Claim
81 words
In a method for cooling a semiconductor device using heat transfer means, the improvement comprising the use of a heat conducting body disposed between said semiconductor device and said heat transfer means, said heat conducting body being an alloy which is in the state of a two-phase field of liquid and solid uniformly throughout the body when the semiconductor device is at operating temperature and having a coefficient of viscosity greater than 3,000 centipoise at a temperature less than 40° C.
Claim 3
Dependent Claim
23 words
A method according to claim 1, wherein said heat conducting body consists essentially of 50-94 weight % indium and 6-50 weight % gallium.
Claim 4
Dependent Claim
23 words
A method according to claim 1, wherein said heat conducting body consists essentially of 20-60 weight % tin and 40-80 weight % gallium.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-05-06 | 1994-11-05 | 1995-05-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-05-06 | 1998-11-05 | 1999-05-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-05-06 | 2002-11-05 | 2003-05-07 | $7700.00 | Window Closed / Lapsed |