US5011791A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Fusible link with built-in redundancy
Assignee: Semiconductor Components Industries LLC
•
Filing: 1989-02-03
•
Granted: 1991-04-30
•
Expires: 2009-02-03
Abstract
Abstract A fusible link is fabricated using sidewall spacer technology. The fusible link of the present requires low fusing power because a fusible link having a small cross-sectional area is obtainable. A conductive or semiconductive, fusible sidewall spacer is formed around a platform or in a well of a dielectric layer. Each fusible link may have two fusible portions per site, resulting in a built-in redundancy. Alternatively, the packing density of the fusible links may be increased by using each side of the fusible sidewall spacer as a fusible link. This process is compatible with bipolar and BICMOS processes used in fabricating high performance memory devices.
Inventors
- 👤 Sal T. Mastroianni
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 19:16
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/071; H10W20/00; H10W20/40; H10W20/49; H10W20/493; Y; Y10; Y10S; Y10S148/00; Y10S148/055
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
60 words
A method of making a fusible sidewall spacer, comprising the steps of: providing a semiconductor substrate; forming a dielectric layer on the substrate; patterning a transition having four sides in the dielectric layer; forming a fusible material on the dielectric layer; and partially removing the fusible material to form the fusible sidewall spacer along the transition in the dielectric layer.
Claim 2
Independent Claim
60 words
A method of making a fusible sidewall spacer, comprising the steps of: providing a semiconductor substrate; forming a dielectric layer on the substrate; patterning a transition having four sides in the dielectric layer; forming a fusible material on the dielectric layer; and partially removing the fusible material to form the fusible sidewall spacer along the transition in the dielectric layer.
Claim 3
Dependent Claim
26 words
The method of claim 1 further comprising providing electrodes making contact to the fusible sidewall spacer to provide for a fusible link having a built-in redundancy.
Claim 4
Dependent Claim
24 words
The method of claim 1 further comprising providing electrodes making contact to the fusible sidewall spacer to provide for at least two fusible links.
Claim 5
Dependent Claim
28 words
The method of claim 1 further comprising providing electrodes making contact to the fusible sidewall spacer to provide for a fusible link on each side of the transition.
Claim 6
Dependent Claim
20 words
The method of claim 1 wherein the material from which the fusible sidewall spacer is formed is a conductive material.
Claim 7
Dependent Claim
20 words
The method of claim 1 wherein the material from which the fusible sidewall spacer is formed is a semiconductive material.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-04-29 | 1994-10-29 | 1995-04-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-04-29 | 1998-10-29 | 1999-04-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-04-29 | 2002-10-29 | 2003-04-30 | $7700.00 | Window Closed / Lapsed |