US5011786A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing a hybrid circuit element
Assignee: Mitsubishi Electric Corp
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Filing: 1989-06-23
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Granted: 1991-04-30
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Expires: 2009-06-23
Abstract
Abstract Disclosed herein is a hybrid circuit element including a redox electrical element formed with redox materials such as biomaterials or pseud-biomaterials and a semiconductor element joined together with the redox electric element. The redox electrical element and the semiconductor element are provided to a common substrate and they are electrically connected to each other with electrical conductors.
Inventors
- 👤 Satoru Isoda
- 👤 Osamu Tomisawa
- 👤 Hiroaki Kawakubo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 21:49
CPC Classifications
H; H10; H10D; H10D86/00; B; B82; B82Y; B82Y10/00; G; G11; G11C; G11C13/00; G11C13/0002; G11C13/0009; G11C13/0014; G11C13/0019; H10K; H10K10/00; H10K10/701; G11C2213/00; G11C2213/70; G11C2213/77; H10W; H10W72/00; H10W72/851; H10W72/874; H10W72/884; Y; Y10; Y10S; Y10S428/00; Y10S428/901; Y10T; Y10T428/00; Y10T428/24; Y10T428/24802; Y10T428/24942; Y10T428/31504; Y10T428/31678; Y10T428/31681; Y10T428/31685; Y10T428/31725; Y10T428/31768
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
98 words
A method of manufacturing a hybrid circuit element, said method of manufacturing being a type using electrical conductors, said method comprising the steps of: forming an insulating layer on a silicon layer to thereby form a semiconductor element; forming a redox electrical element on said insulating layer by using redox materials; forming a metal wiring pattern on said redox electrical element to create electrodes by using a mask which is formed through energy beam exposure; juxtaposing said redox electrical element and said semiconductor element together; and electrically connecting said two elements to each other with said electrical conductors.
Claim 2
Independent Claim
98 words
A method of manufacturing a hybrid circuit element, said method of manufacturing being a type using electrical conductors, said method comprising the steps of: forming an insulating layer on a silicon layer to thereby form a semiconductor element; forming a redox electrical element on said insulating layer by using redox materials; forming a metal wiring pattern on said redox electrical element to create electrodes by using a mask which is formed through energy beam exposure; juxtaposing said redox electrical element and said semiconductor element together; and electrically connecting said two elements to each other with said electrical conductors.
Claim 3
Dependent Claim
33 words
A method as claimed in claim 1 wherein said energy beam exposure is a beam selected from the group of a molecular beam, an ion beam, an X-ray beam and a laser beam.
Claim 4
Dependent Claim
29 words
A method as claimed in claim 1, wherein said energy beam exposure is a beam selected from the group of a visible ray, an ultra-violet ray, and an X-ray.
Claim 5
Dependent Claim
17 words
A method as claimed in claim 1, wherein said wiring pattern forms said electrodes arranged in parallel.
Claim 6
Independent Claim
101 words
A method of manufacturing a hybrid circuit element, said method of manufacturing being of the type using electrical conductors, said method comprising the steps of: forming an insulating layer on a silicon layer to thereby form a semiconductor element; forming a redox electrical element on said insulating layer by using redox materials; forming a metal wiring pattern on said redox electrical element to create electrodes by directly patterning a metal film according to a chemical vapor deposition method; juxtaposing said redox electrical element and said semiconductor element together; and electrically connecting said two elements to each other with said electrical conductors.
Claim 7
Independent Claim
101 words
A method of manufacturing a hybrid circuit element, said method of manufacturing being of the type using electrical conductors, said method comprising the steps of: forming an insulating layer on a silicon layer to thereby form a semiconductor element; forming a redox electrical element on said insulating layer by using redox materials; forming a metal wiring pattern on said redox electrical element to create electrodes by directly patterning a metal film according to a chemical vapor deposition method; juxtaposing said redox electrical element and said semiconductor element together; and electrically connecting said two elements to each other with said electrical conductors.
Claim 8
Dependent Claim
16 words
A method as claimed in claim 5, wherein said wiring pattern forms said electrodes in parallel.
Claim 9
Independent Claim
73 words
A method of manufacturing a hybrid circuit element comprising the steps of: forming a substrate; providing a semiconductor device layer on at least a portion of said substrate; forming an insulating layer on at least a portion of said semiconductor device layer; forming a monolithic redox electrical element comprising redox materials on at least a potion on of said insulating layer; and electrically connecting said semiconductor device and said monolithic redox electrical element.
Claim 10
Independent Claim
73 words
A method of manufacturing a hybrid circuit element comprising the steps of: forming a substrate; providing a semiconductor device layer on at least a portion of said substrate; forming an insulating layer on at least a portion of said semiconductor device layer; forming a monolithic redox electrical element comprising redox materials on at least a potion on of said insulating layer; and electrically connecting said semiconductor device and said monolithic redox electrical element.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-04-29 | 1994-10-29 | 1995-04-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-04-29 | 1998-10-29 | 1999-04-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-04-29 | 2002-10-29 | 2003-04-30 | $7700.00 | Window Closed / Lapsed |