Abstract The present invention relates to a semiconductor element and a method of forming the same and various kinds of article in which said element is used. Any material selected from the group consisting of SiH4, Si2H6 and SiF4, and GeH4 or GeF4, are used as raw material gases. H2 is used as a diluent gas if necessary. A photochemical gas phase vapor deposition method is used, at a pressure of 0.1 to 20 Torr, an optical intensity of 10 to 1,000 mW/cm2, and a substrate temperature of 50 DEG to 250 DEG C. A semiconductor element formed of a -SiGe:H film having superior photoelectric conductivity, a method of forming a semiconductor element film containing Ge added thereto and having high long wave length-sensitivity and superior film quality can be provided. In addition, various kinds of articles such as a solar cell having superior long wave length-sensitivity in which said element is used in a carrier-producing layer, an electrophotographic sensitive member containing said element in a carrier-producing layer, and an image sensor, in which said element is used in a carrier-producing layer, having superior long wave length-sensitivity, can be provided.
A method of forming an a-SiGe:H film, which can be used in semiconductor elements, which comprises forming a film by a mercury-sensitized photochemical gas phase vapor deposition method with ultraviolet rays having wavelengths of 0.3 μm or less as a light source, wherein a member selected from the group consisting of SiH 4 , Si 2 H 6 and SiF 4 , together with GeH 4 or GeF 4 , are used as raw material gases and are introduced with hydrogen as a diluent gas into a film-forming chamber so that a volume ratio of the hydrogen gas to the total gas volume is within the range of 0.25 to 0.60, and the film being formed under the conditions of a film-forming pressure of 0.1 to 20 Torr, an intensity of the ultraviolet rays of 10 to 500 mW/cm 2 , and a substrate temperature of 150° to 250° C.
Claim 2
Independent Claim
150 words
A method of forming an a-SiGe:H film, which can be used in semiconductor elements, which comprises forming a film by a mercury-sensitized photochemical gas phase vapor deposition method with ultraviolet rays having wavelengths of 0.3 μm or less as a light source, wherein a member selected from the group consisting of SiH 4 , Si 2 H 6 and SiF 4 , together with GeH 4 or GeF 4 , are used as raw material gases and are introduced with hydrogen as a diluent gas into a film-forming chamber so that a volume ratio of the hydrogen gas to the total gas volume is within the range of 0.25 to 0.60, and the film being formed under the conditions of a film-forming pressure of 0.1 to 20 Torr, an intensity of the ultraviolet rays of 10 to 500 mW/cm 2 , and a substrate temperature of 150° to 250° C.
Claim 3
Dependent Claim
14 words
A method according to claim 1, wherein the semiconductor element is a solar cell.
Claim 4
Dependent Claim
15 words
A method according to claim 1, wherein the semiconductor element is an electrophotographic sensitive member.
Claim 5
Dependent Claim
14 words
A method according to claim 1, wherein the semiconductor element is an image sensor.