Patent US5011706A successfully refreshed from Google Patents.
US5011706A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming coatings containing amorphous silicon carbide
Assignee: Dow Silicones Corp
•
Filing: 1989-04-12
•
Granted: 1991-04-30
•
Expires: 2009-04-12
Abstract
Abstract The invention is a method of forming a continuous coating of amorphous silicon carbide on the surface of articles by plasma enhanced chemical vapor deposition. In the method, the chemical vapor comprises a silicon-containing cyclobutane, such as a silacyclobutane or a 1,3-disilacyclobutane. The coatings formed by the invention are useful for application to solar cells, for preventing corrosion of electronic devices, for forming interlevel dielectric layers between metallization layers of electronic devices, and for providing abrasion resistance to surfaces.
Inventors
- 👤 Leo Tarhay
- 👤 Kenneth G. Sharp
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 10:25
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/06; C23C16/00; C23C16/22; C23C16/30; C23C16/32; C23C16/325
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
130 words
A method of forming a continuous coating on a structure, the method comprising: introducing sufficient quantity of a vapor into an evacuated chamber containing the structure to provide a vapor pressure in the chamber of 0.001 to 300 Torr, the vapor comprising a silicon-containing cyclobutane selected from the group consisting of silacyclobutanes represented by the formula ##STR5## and 1,3-disilacyclobutanes represented by the formula ##STR6## where, in both formulas, each R is independently selected from the group consisting of hydrogen, fluorine, and hydrocarbon radicals having 1 to 4 carbon atoms and each R' is independently selected from the group consisting of hydrogen and hydrocarbon radicals having 1 to 4 carbon atoms; inducing decomposition of the silicon-containing cyclobutane in the chamber by effecting a plasma discharge within the chamber containing the structure.
Claim 2
Independent Claim
130 words
A method of forming a continuous coating on a structure, the method comprising: introducing sufficient quantity of a vapor into an evacuated chamber containing the structure to provide a vapor pressure in the chamber of 0.001 to 300 Torr, the vapor comprising a silicon-containing cyclobutane selected from the group consisting of silacyclobutanes represented by the formula ##STR5## and 1,3-disilacyclobutanes represented by the formula ##STR6## where, in both formulas, each R is independently selected from the group consisting of hydrogen, fluorine, and hydrocarbon radicals having 1 to 4 carbon atoms and each R' is independently selected from the group consisting of hydrogen and hydrocarbon radicals having 1 to 4 carbon atoms; inducing decomposition of the silicon-containing cyclobutane in the chamber by effecting a plasma discharge within the chamber containing the structure.
Claim 3
Dependent Claim
39 words
The method according to claim 1 wherein the vapor is continuously introduced into and drawn out of the chamber to obtain a flow of vapor through the chamber and the plasma discharge is produced by alternating or direct current.
Claim 4
Dependent Claim
18 words
The method according to claim 2 wherein the temperature of the structure is 20° to about 600° C.
Claim 5
Dependent Claim
17 words
The method according to claim 2 wherein the temperature of the structure is 200° to 350° C.
Claim 6
Dependent Claim
47 words
The method according to claim 1 wherein the vapor is continuously introduced into and drawn out of the chamber to obtain a flow of vapor through the chamber and the frequency of the plasma discharge is in the range of about 25 KHz to about 3 GHz.
Claim 7
Dependent Claim
18 words
The method according to claim 5 wherein the temperature of the structure is 20° to about 600° C.
Claim 8
Dependent Claim
15 words
The method according to claim 6 wherein the structure is positioned within the plasma discharge.
Claim 9
Dependent Claim
16 words
The method according to claim 7 wherein the vapor comprises the silicon-containing cyclobutane and hydrogen gas.
Claim 10
Dependent Claim
23 words
The method according to claim 7 wherein the silicon-containing cyclobutane is silacyclobutane and the temperature of the structure is 200° to 350° C.
Claim 11
Dependent Claim
26 words
The method according to claim 6 wherein the structure is positioned proximate to the plasma discharge at a point down-flow from the area of plasma discharge.
Claim 12
Dependent Claim
30 words
The method according to claim 6 wherein the vapor comprises the silicon-containing cyclobutane and a diluent gas which is inert under the conditions of the decomposition of the silicon-containing cyclobutane.
Claim 13
Dependent Claim
12 words
The method according to claim 6 wherein the silicon-containing cyclobutane is silacyclobutane.
Claim 14
Dependent Claim
17 words
The method according to claim 5 wherein the temperature of the structure is 200° to 350° C.
Claim 15
Dependent Claim
12 words
The method according to claim 13 wherein the silicon-containing cyclobutane is silacyclobutane.
References Cited (Backward Citations)
US3400309A
Cited
US4000054A
Cited
US4362766A
Cited
GB2132817A
Cited
US4554180A
Cited
US4564533A
Cited
US4683145A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-04-29 | 1994-10-29 | 1995-04-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-04-29 | 1998-10-29 | 1999-04-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-04-29 | 2002-10-29 | 2003-04-30 | $7700.00 | Window Closed / Lapsed |