Patent US5008218A successfully refreshed from Google Patents.
US5008218A
Expired / Lapsed
US
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Method for fabricating a thin film transistor using a silicide as an etch mask
Assignee: Hitachi Ltd
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Filing: 1989-09-18
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Granted: 1991-04-16
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Expires: 2009-09-18
Abstract
Abstract A method for fabricating an active matrix substrate is disclosed which includes the following steps: forming an island region of a first semiconductor film on a prescribed insulating substrate; forming a first insulating film and a second semiconductor film on said first insulating film; forming a second insulating film on said second semiconductor film and thereafter forming a prescribed pattern of the second insulating film; depositing prescribed metal on the pattern and thereafter forming a compound of the second semiconductor film and the metal; removing unreacted portion of the metal; and etching said second semiconductor film and said first insulating film using said compound as a mask.
Inventors
- 👤 Genshiro Kawachi
- 👤 Akio Mimura
- 👤 Nobutake Konishi
- 👤 Kikuo Ono
- 👤 Takashi Suzuki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 20:35
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/01; H10D86/021; H10D30/00; H10D30/60; H10D30/67; H10D30/6729; H10D30/6737; H10D30/6739; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D86/40; H10D86/60; H10P; H10P50/00; H10P50/71; Y; Y10; Y10S; Y10S148/00; Y10S148/105; Y10S148/106; Y10S438/00; Y10S438/942; Y10S438/945
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
115 words
A method of fabricating an active matrix substrate comprising the steps of: (a) forming an island region of a first semiconductor film on a prescribed insulating substrate; (b) forming a first insulating film and a second semiconductor film on said first insulating film; (c) forming a second insulating film on said second semiconductor film and thereafter forming a prescribed pattern of the second insulating film; (d) depositing prescribed metal on the pattern and thereafter forming a compound of the second semiconductor film and the metal; (e) removing unreacted portion of the metal and the second insulating film, and (f) etching said second semiconductor film and said first insulating film using said compound as a mask.
Claim 2
Independent Claim
115 words
A method of fabricating an active matrix substrate comprising the steps of: (a) forming an island region of a first semiconductor film on a prescribed insulating substrate; (b) forming a first insulating film and a second semiconductor film on said first insulating film; (c) forming a second insulating film on said second semiconductor film and thereafter forming a prescribed pattern of the second insulating film; (d) depositing prescribed metal on the pattern and thereafter forming a compound of the second semiconductor film and the metal; (e) removing unreacted portion of the metal and the second insulating film, and (f) etching said second semiconductor film and said first insulating film using said compound as a mask.
Claim 3
Dependent Claim
24 words
A method of fabricating an active matrix substrate according to claim 1, in which said second insulating film is made of SiO 2 .
Claim 4
Independent Claim
147 words
A method for fabricating an active matrix substrate comprising the steps of: (a) forming an island region of a first semiconductor film on a prescribed insulating substrate; (b) forming a first insulating film and a second semiconductor film on said first insulating film; (c) forming a second insulating film on said second semiconductor film and thereafter forming a prescribed pattern of the second insulating film; (d) depositing prescribed metal on the pattern and thereafter forming a compound of the second semiconductor film and the metal; (e) removing unreacted portion of the metal; (f) etching away said prescribed pattern of the second insulating film; (g) depositing a third insulating film on said second semiconductor film and thereafter forming a prescribed pattern thereof; and (h) etching said second semiconductor film and said first insulating film using said compound and said pattern of the third insulating film as a mask.
Claim 5
Independent Claim
147 words
A method for fabricating an active matrix substrate comprising the steps of: (a) forming an island region of a first semiconductor film on a prescribed insulating substrate; (b) forming a first insulating film and a second semiconductor film on said first insulating film; (c) forming a second insulating film on said second semiconductor film and thereafter forming a prescribed pattern of the second insulating film; (d) depositing prescribed metal on the pattern and thereafter forming a compound of the second semiconductor film and the metal; (e) removing unreacted portion of the metal; (f) etching away said prescribed pattern of the second insulating film; (g) depositing a third insulating film on said second semiconductor film and thereafter forming a prescribed pattern thereof; and (h) etching said second semiconductor film and said first insulating film using said compound and said pattern of the third insulating film as a mask.
Claim 6
Dependent Claim
19 words
A method for fabricating an active matrix substrate according to claim 3, wherein said third insulating film is photoresist.
Claim 7
Independent Claim
114 words
A method for fabricating an active matrix substrate comprising the steps of: (a) forming a first semiconductor film on a prescribed insulating substrate; (b) forming a first insulating film on said first semiconductor film and thereafter forming a prescribed pattern of the first insulating film; (c) depositing prescribed metal on the pattern and thereafter forming a compound of the first semiconductor film and the metal; (d) removing unreacted portion of the metal; (e) etching away the prescribed pattern of said first insulating film; (f) forming a second insulating film and thereafter forming a prescribed pattern thereof; and (g) etching said first semiconductor film using said compound and patterned second insulating film as a mask.
Claim 8
Independent Claim
114 words
A method for fabricating an active matrix substrate comprising the steps of: (a) forming a first semiconductor film on a prescribed insulating substrate; (b) forming a first insulating film on said first semiconductor film and thereafter forming a prescribed pattern of the first insulating film; (c) depositing prescribed metal on the pattern and thereafter forming a compound of the first semiconductor film and the metal; (d) removing unreacted portion of the metal; (e) etching away the prescribed pattern of said first insulating film; (f) forming a second insulating film and thereafter forming a prescribed pattern thereof; and (g) etching said first semiconductor film using said compound and patterned second insulating film as a mask.
Claim 9
Dependent Claim
19 words
A method for fabricating an active matrix substrate according to claim 5, wherein said compound constitutes a signal electrode.
Claim 10
Dependent Claim
19 words
A method for fabricating an active matrix substrate according to claim 5, wherein said second insulating film is photoresist.
Claim 11
Dependent Claim
28 words
A method for fabricating an active matrix substrate according to claim 1, further comprising implanting impurity ions into said first semiconductor film using said compound as a mask.
Claim 12
Dependent Claim
18 words
A method for fabricating an active matrix substrate according to claim 1, wherein said compound is a silicide.
Claim 13
Dependent Claim
35 words
A method for fabricating an active matrix substrate according to claim 3, further comprising implanting impurity ions into said second semiconductor film and into said first semiconductor film using said semiconductor film as a mask.
Claim 14
Dependent Claim
18 words
A method for fabricating an active matrix substrate according to claim 3, wherein said compound is a silicide.
Claim 15
Dependent Claim
18 words
A method for fabricating an active matrix substrate according to claim 5, wherein said compound is a silicide.
Claim 16
Dependent Claim
38 words
A method for fabricating an active matrix substrate according to claim 6, further comprising forming a patterned gate insulating layer on said first semiconductor film and forming a patterned second semiconductor film on said patterned gate insulating layer.
Claim 17
Dependent Claim
36 words
A method for fabricating an active matrix substrate according to claim 13, further comprising implanting impurity ions into said second semiconductor film and into said first semiconductor film using said second semiconductor film as a mask.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-04-15 | 1994-10-15 | 1995-04-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-04-15 | 1998-10-15 | 1999-04-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-04-15 | 2002-10-15 | 2003-04-16 | $7700.00 | Window Closed / Lapsed |