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US5007984A
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Method for etching chromium film formed on substrate
Assignee: Mitsubishi Electric Corp
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Filing: 1988-09-27
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Granted: 1991-04-16
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Expires: 2008-09-27
Abstract
Abstract A method for etching a chromium film includes the steps of forming a resist having a phenol novolak resin as a principal chain on the chromium film formed on a substrate, and etching the chromium film using an etchant while stripping off the resist from the chromium film using an etchant containing nitric acid. A second method for etching a chromium film comprises the steps of forming an aluminum film or an aluminum alloy film on the chromium film formed on a substrate, forming a resist having a predetermined pattern on the aluminum film or the aluminum alloy film, etching the aluminum film or the aluminum alloy film and the chromium film using phosphoric acid, and removing by etching the aluminum film or the aluminum alloy film using phosphoric acid containing nitric acid after removing the resist.
Inventors
- 👤 Michinari Tsutsumi
- 👤 Atsushi Endo
- 👤 Toshio Yada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 08:34
CPC Classifications
C; C23; C23F; C23F1/00; C23F1/10; C23F1/14; C23F1/16; C23F1/26; C23F1/02; H; H10; H10P; H10P50/00; H10P50/60; H10P50/66; H10P50/663; H10P50/667; H10P50/71
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
133 words
A method for etching a chromium film formed on a substrate, comprising the steps of: providing a chromium film formed on a substrate, forming a metal film of a material different from the chromium film on the chromium film, forming a resist having a predetermined pattern on said metal film, first etching said metal film and said chromium film using a first etchant with which both said chromium film and said metal film are etched and with which the etching rate of said metal film is higher than the etching rate of said chromium film, said etchant comprising an acid consisting essentially of phosphoric acid, whereby sidewall surfaces of a remaining pattern of the chromium film are tapered, and second etching said metal film using a second etchant to remove said metal film.
Claim 2
Independent Claim
133 words
A method for etching a chromium film formed on a substrate, comprising the steps of: providing a chromium film formed on a substrate, forming a metal film of a material different from the chromium film on the chromium film, forming a resist having a predetermined pattern on said metal film, first etching said metal film and said chromium film using a first etchant with which both said chromium film and said metal film are etched and with which the etching rate of said metal film is higher than the etching rate of said chromium film, said etchant comprising an acid consisting essentially of phosphoric acid, whereby sidewall surfaces of a remaining pattern of the chromium film are tapered, and second etching said metal film using a second etchant to remove said metal film.
Claim 3
Dependent Claim
24 words
The method according to claim 1, wherein said metal film forming step comprises the step of forming an aluminum film as the metal film.
Claim 4
Dependent Claim
51 words
The method according to claim 2, wherein the second etchant comprises phosphoric acid and nitric acid, and including the further step subsequent to said first etching but prior to said second etching, of removing by etching a residue of the chromium film which remains on the substrate using a chromium etchant.
Claim 5
Dependent Claim
25 words
The method according to claim 1, wherein said metal film forming step comprises the step of forming an aluminum alloy film as the metal film.
Claim 6
Dependent Claim
51 words
The method according to claim 4, wherein the second etchant comprises phosphoric acid and nitric acid, and including the further step subsequent to said first etching but prior to said second etching, of removing by etching a residue of the chromium film which remains on the substrate using a chromium etchant.
References Cited (Backward Citations)
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