US5003372A
Expired / Lapsed
US
⏱️ 0.0 years remaining
High breakdown voltage semiconductor device
Assignee: MagnaChip Semiconductor Ltd
•
Filing: 1989-06-09
•
Granted: 1991-03-26
•
Expires: 2009-06-09
Abstract
Abstract A semiconductor device having a grooved field plate(s), a grooved field limiting ring(s) or a combination of a grooved field plate(s) and grooved field limiting ring(s) is disclosed. The grooved modification of the conventional semiconductor results in an increased break-down voltage over the conventional semiconductor device. A method for manufacturing the grooved semiconductor device is disclosed.
Inventors
- 👤 Jong O. Kim
- 👤 Jin H. Kim
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 01:41
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/111; H10D64/117; H10D30/00; H10D30/60; H10D30/64; H10D30/66; H10D30/668
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
224 words
A semiconductor device having a high breakdown voltage comprising: a first conductivity type heavily doped silicon substrate having a first main surface and a second main surface; a first conductivity type lightly doped layer on said first main surface of said first conductivity type silicon substrate; at least one second conductivity type region positioned in a portion of said first conductivity type layer; a plurality of grooves formed in said first conductivity type layer proximates to said second conductivity type region; an insulating layer disposed on said first conductivity type layer, said second conductivity type region, and said plurality of grooves; said insulating layer further including an opening formed therethrough over said second conductivity type region; a first portion of conducting material formed into said opening to contact said second conductivity type region; a first electrode electrically connected to said first portion of conducting material; a second portion of conducting material disposed on said second main surface of said first conductivity type silicon substrate; a second electrode electrically connected to said second portion of conducting material; a third portion of conductive material disposed on said insulating layer in each groove of said plurality of grooves to form a plurality of floating electrodes; and said floating electrodes being electrically isolated from said first conductivity type layer to provide a high breakdown voltage to said device.
Claim 2
Dependent Claim
224 words
A semiconductor device having a high breakdown voltage comprising: a first conductivity type heavily doped silicon substrate having a first main surface and a second main surface; a first conductivity type lightly doped layer on said first main surface of said first conductivity type silicon substrate; at least one second conductivity type region positioned in a portion of said first conductivity type layer; a plurality of grooves formed in said first conductivity type layer proximates to said second conductivity type region; an insulating layer disposed on said first conductivity type layer, said second conductivity type region, and said plurality of grooves; said insulating layer further including an opening formed therethrough over said second conductivity type region; a first portion of conducting material formed into said opening to contact said second conductivity type region; a first electrode electrically connected to said first portion of conducting material; a second portion of conducting material disposed on said second main surface of said first conductivity type silicon substrate; a second electrode electrically connected to said second portion of conducting material; a third portion of conductive material disposed on said insulating layer in each groove of said plurality of grooves to form a plurality of floating electrodes; and said floating electrodes being electrically isolated from said first conductivity type layer to provide a high breakdown voltage to said device.
Claim 3
Dependent Claim
11 words
The semiconductor of claim 1 wherein said conducting material is polysilicon.
Claim 4
Dependent Claim
11 words
The semiconductor of claim 1 wherein said insulating material is glass.
Claim 5
Dependent Claim
11 words
The semiconductor of claim 1 wherein said floating electrode is polysilicon.
Claim 6
Dependent Claim
12 words
The semiconductor of claim 1 wherein said floating electrode includes a metal.
Claim 7
Dependent Claim
186 words
A semiconductor device having a high breakdown voltage comprising: a first conductivity type heavily doped silicon substrate having a first main surface and a second main surface; a first conductivity type lightly doped layer on said first main surface of said first conductivity type silicon substrate; at least one second conductivity type region positioned in a portion of said first conductivity type layer; a groove formed in said first conductivity type layer proximate to said second conductivity type region; an insulating layer disposed on said first conductivity type layer, said second conductivity type region, and said groove; said insulating layer further including an opening formed therethrough over said second conductivity type region; a first portion of conducting material formed into said opening and into said groove to contact said second conductivity type region thereby forming a field plate with high breakdown voltage; a first electrode electrically connected to said first portion of conducting material; a second portion of conducting material disposed on said second main surface of said first conductivity type silicon substrate; and a second electrode electrically connected to said second portion of conducting material.
Claim 8
Dependent Claim
186 words
A semiconductor device having a high breakdown voltage comprising: a first conductivity type heavily doped silicon substrate having a first main surface and a second main surface; a first conductivity type lightly doped layer on said first main surface of said first conductivity type silicon substrate; at least one second conductivity type region positioned in a portion of said first conductivity type layer; a groove formed in said first conductivity type layer proximate to said second conductivity type region; an insulating layer disposed on said first conductivity type layer, said second conductivity type region, and said groove; said insulating layer further including an opening formed therethrough over said second conductivity type region; a first portion of conducting material formed into said opening and into said groove to contact said second conductivity type region thereby forming a field plate with high breakdown voltage; a first electrode electrically connected to said first portion of conducting material; a second portion of conducting material disposed on said second main surface of said first conductivity type silicon substrate; and a second electrode electrically connected to said second portion of conducting material.
Claim 9
Dependent Claim
12 words
The semiconductor of claim 6 wherein said conducting material is a polysilicon.
Claim 10
Dependent Claim
12 words
The semiconductor of claim 6 wherein said insulating material is a glass.
Claim 11
Dependent Claim
12 words
The semiconductor of claim 6 wherein said floating electrode is a polysilicon.
Claim 12
Dependent Claim
281 words
A semiconductor device having a high breakdown voltage comprising: a first conductivity type heavily doped silicon substrate having a first main surface and a second main surface; a first conductivity type lightly doped layer on said first main surface of said first conductivity type silicon substrate; at least one second conductivity type region positioned in a portion of said first conductivity type layer; a plurality of grooves formed in said first conductivity type layer proximate to said second conductivity type region; an insulating layer disposed on said first conductivity type layer, said second conductivity type region, and said plurality of grooves; said insulating layer further including an opening formed therethrough over said second conductivity type region; a first portion of conducting material formed into said opening to contact said second conductivity type region; a first electrode electrically connected to said first portion of conducting material; a second portion of conducting material disposed on said second main surface of said first conductivity type silicon substrate; a second electrode electrically connected to said second portion of conducting material; a third portion of conductive material disposed on said insulating layer in each grove of said plurality of grooves to form a plurality of floating electrodes; said floating electrodes being electrically isolated from aid first conductivity type layer to provide a high breakdown voltage to said device; and said plurality of grooves further including a groove formed in said first conductivity type layer adjacent to said second conductivity type region with said groove being coated by said insulating layer and where said first portion of conducting material further covers said insulating layer coated adjacent groove thereby forming a field plate with a high breakdown voltage.
Claim 13
Dependent Claim
281 words
A semiconductor device having a high breakdown voltage comprising: a first conductivity type heavily doped silicon substrate having a first main surface and a second main surface; a first conductivity type lightly doped layer on said first main surface of said first conductivity type silicon substrate; at least one second conductivity type region positioned in a portion of said first conductivity type layer; a plurality of grooves formed in said first conductivity type layer proximate to said second conductivity type region; an insulating layer disposed on said first conductivity type layer, said second conductivity type region, and said plurality of grooves; said insulating layer further including an opening formed therethrough over said second conductivity type region; a first portion of conducting material formed into said opening to contact said second conductivity type region; a first electrode electrically connected to said first portion of conducting material; a second portion of conducting material disposed on said second main surface of said first conductivity type silicon substrate; a second electrode electrically connected to said second portion of conducting material; a third portion of conductive material disposed on said insulating layer in each grove of said plurality of grooves to form a plurality of floating electrodes; said floating electrodes being electrically isolated from aid first conductivity type layer to provide a high breakdown voltage to said device; and said plurality of grooves further including a groove formed in said first conductivity type layer adjacent to said second conductivity type region with said groove being coated by said insulating layer and where said first portion of conducting material further covers said insulating layer coated adjacent groove thereby forming a field plate with a high breakdown voltage.
Claim 14
Dependent Claim
10 words
The semiconductor of claim 10 wherein said conducting material polysilicon.
Claim 15
Dependent Claim
12 words
The semiconductor of claim 10 wherein said insulating material is a glass.
Claim 16
Dependent Claim
12 words
The semiconductor of claim 10 wherein said floating electrode is a polysilicon.
Claim 17
Dependent Claim
12 words
The semiconductor of claim 10 wherein said floating electrode includes a metal.
References Cited (Backward Citations)
US4009483A
Cited
US4270137A
Cited
JPS5635463A
Cited
US4399449A
Cited
US4412242A
Cited
US4567502A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-03-25 | 1994-09-24 | 1995-03-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-03-25 | 1998-09-24 | 1999-03-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-03-25 | 2002-09-24 | 2003-03-26 | $7700.00 | Window Closed / Lapsed |