Patent US5002632A successfully refreshed from Google Patents.
US5002632A
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Method and apparatus for etching semiconductor materials
Assignee: Texas Instruments Inc
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Filing: 1989-11-22
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Granted: 1991-03-26
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Expires: 2009-11-22
Abstract
Abstract An apparatus and method for the etching of semiconductor materials (14) is disclosed. The apparatus (10) includes a process chamber (12) having a remote generator (16) in fluid communication with the process chamber (12) for converting a noble gas (34) to a metastable gas (36). An etchant gas (40) is subsequently brought into the chamber (12) adjacent to the material (14), to mix and react with the metastable gas (36) at activation zone (38). The metastable gas (36) collides with the etchant gas (40) to cause the mixture to selectively etch the material 14.
Inventors
- 👤 Lee M. Loewenstein
- 👤 Douglas A. Webb
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 18:34
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/04; H10P72/0402; H10P72/0418; H10P72/0421; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32357; H10P50/00; H10P50/20; H10P50/24; H10P50/242; H10P50/26; H10P50/264; H10P50/266; H10P50/28; H10P50/282; H10P50/283
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
80 words
An apparatus for etching semiconductor material, comprising: a process chamber for holding the semiconductor material during etching; a generator remote from and in fluid communication with the process chamber for producing a metastable gas from a noble gas; and an etchant precursor source having an etchant contained therein and in fluid communication with the process chamber for supplying said etchant to mix and react with said metastable gas prior to entering the process chamber for selectively etching the semiconductor material.
Claim 2
Independent Claim
80 words
An apparatus for etching semiconductor material, comprising: a process chamber for holding the semiconductor material during etching; a generator remote from and in fluid communication with the process chamber for producing a metastable gas from a noble gas; and an etchant precursor source having an etchant contained therein and in fluid communication with the process chamber for supplying said etchant to mix and react with said metastable gas prior to entering the process chamber for selectively etching the semiconductor material.
Claim 3
Dependent Claim
46 words
The apparatus as recited in claim 1, wherein said generator comprises: an inlet tube; a discharge tube in fluid communication with said inlet tube; an excitation cavity surrounding said discharge tube; and an outlet tube in fluid communication with said discharge tube and said process chamber.
Claim 4
Dependent Claim
15 words
The apparatus as recited in claim 2, wherein said outlet tube is formed of quartz.
Claim 5
Dependent Claim
25 words
The apparatus as recited in claim 1, wherein said noble gas is selected from a group consisting of helium, neon, argon, krypton, xenon, and radon.
Claim 6
Dependent Claim
15 words
The apparatus as recited in claim 1, wherein said etchant gas is a fluorine-bearing compound.
Claim 7
Independent Claim
75 words
A method for etching a surface of an integrated circuit workpiece in a process chamber, comprising the steps of: exciting a noble gas in a remote generator to create a metastable gas; flowing said metastable gas through an outlet tube and in fluid connection with the process chamber; and injecting an etchant precursor into the process chamber to react with said metastable gas for etching the surface of an integrated circuit workpiece composed of tungsten.
Claim 8
Independent Claim
75 words
A method for etching a surface of an integrated circuit workpiece in a process chamber, comprising the steps of: exciting a noble gas in a remote generator to create a metastable gas; flowing said metastable gas through an outlet tube and in fluid connection with the process chamber; and injecting an etchant precursor into the process chamber to react with said metastable gas for etching the surface of an integrated circuit workpiece composed of tungsten.
Claim 9
Independent Claim
77 words
A method for manufacturing an etchant for etching an electronic device, comprising the steps of: exciting a noble gas to convert to a metastable gas in a discharge tube; flowing said excited metastable gas through an outlet tube in fluid communication with a process chamber; and forming an etchant from an etchant precursor compound gas with the excited metastable gas in the outlet tube before said metastable gas and said etchant gases flow into said process chamber.
Claim 10
Independent Claim
77 words
A method for manufacturing an etchant for etching an electronic device, comprising the steps of: exciting a noble gas to convert to a metastable gas in a discharge tube; flowing said excited metastable gas through an outlet tube in fluid communication with a process chamber; and forming an etchant from an etchant precursor compound gas with the excited metastable gas in the outlet tube before said metastable gas and said etchant gases flow into said process chamber.
Claim 11
Dependent Claim
15 words
The method as recited in claim 7, wherein said electronic device is made of tungsten.
Claim 12
Dependent Claim
14 words
The method as recited in claim 7, wherein said etchant gas is fluorine-bearing compound.
Claim 13
Dependent Claim
26 words
The method as recited in claim 7, wherein said noble gas is selected from group consisting of argon, helium, neon, krypton, xenon, radon and mixture thereof.
Claim 14
Dependent Claim
20 words
The method as recited in claim 7, further including activating the etchant gas prior to mixing with said metastable gas.
References Cited (Backward Citations)
US4615756A
Cited
US4668337A
Cited
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