Patent US4997786A successfully refreshed from Google Patents.
US4997786A
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US
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Method of fabricating a semiconductor device having buried insulation layer separated by ditches
Assignee: Panasonic Holdings Corp
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Filing: 1989-05-15
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Granted: 1991-03-05
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Expires: 2009-05-15
Abstract
Abstract A method of fabricating a semiconductor device having a buried insulator region is constituted by forming ditches in a surface of the buried insulator region to be formed which is closest to the surface of the substrate, implanting ions of gas taken from the group consisting of oxygen and nitrogen into the substrate from the surface to form an ion implanted region corresponding to the desired buried insulator region, and heat treating the thus ion implanted substrate at a gas reaction temperature of at least 1100° C. for forming the buried insulator region.
Inventors
- 👤 Masafumi Kubota
- 👤 Bunji Mizuno
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 10:36
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1908; H10W; H10W10/00; H10W10/10; H10W10/181
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
141 words
A method of fabricating a semiconductor device having a silicon substrate and a buried insulator region beneath a surface of said substrate, comprising: forming trenches in said surface of said silicon substrate to a depth at least as great as the distance from said surface of said substrate to a surface of the buried insulator region to be formed which insulator surface is closest to said surface of said substrate; implanting ions of gas taken from the group consisting of oxygen and nitrogen into said substrate from said surface of said substrate and over the area of the surface of said substrate and said trenches to form an ion implanted region corresponding to the desired buried insulator region; and heat treating the thus ion implanted substrate at a gas-reaction temperature of at least 1100° C. for forming the buried insulator region.
Claim 2
Independent Claim
141 words
A method of fabricating a semiconductor device having a silicon substrate and a buried insulator region beneath a surface of said substrate, comprising: forming trenches in said surface of said silicon substrate to a depth at least as great as the distance from said surface of said substrate to a surface of the buried insulator region to be formed which insulator surface is closest to said surface of said substrate; implanting ions of gas taken from the group consisting of oxygen and nitrogen into said substrate from said surface of said substrate and over the area of the surface of said substrate and said trenches to form an ion implanted region corresponding to the desired buried insulator region; and heat treating the thus ion implanted substrate at a gas-reaction temperature of at least 1100° C. for forming the buried insulator region.
Claim 3
Dependent Claim
59 words
A method as claimed in claim 1, further comprising forming a silicon layer on said surface of said substrate and in said trenches while leaving said buried insulator region spaced from said surface of said substrate and from the bottom of said trench by carrying out epitaxial growth at said surface of said substrate for forming said silicon layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-03-04 | 1994-09-03 | 1995-03-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-03-04 | 1998-09-03 | 1999-03-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-03-04 | 2002-09-03 | 2003-03-05 | $7700.00 | Window Closed / Lapsed |