Patent US2238737A successfully refreshed from Google Patents.
Patent US4997746A successfully refreshed from Google Patents.
US4997746A
Expired / Lapsed
US
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Method of forming conductive lines and studs
Assignee: International Business Machines Corp
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Filing: 1988-11-22
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Granted: 1991-03-05
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Expires: 2008-11-22
Abstract
Abstract A method is provided for forming a conductive stud and line over a surface, comprising the steps of: forming at least a first layer of material over the region on the surface whereat the conductive stud and line are to be formed; forming a layer of dual image photoresist over the material; exposing the dual image potoresist to radiation so as to form at least first and second regions exhibiting different development characteristics; developing the first region so as to expose a portion of the material; removing the exposed portion of the material so as to define the position of one of the conductive line or stud; developing the second region to expose more of the material; and removing the newly exposed portion of material so as to define the position of the other of the conductive line or stud.
Inventors
- 👤 Nancy A. Greco
- 👤 Stephen E. Greco
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 05:42
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/063; H10W20/0633; H10W20/069; H10W20/0693; H10W20/071; H10W20/081; H10W20/084; H10W20/088; H05; H05K; H05K3/00; H05K3/46; H05K3/4644; H05K3/4647; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/948
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
210 words
A method of forming a conductive stud self-aligned on a conductive line, comprising the steps of: providing a semiconductor device having a surface over which it is desired to form said conductive line and stud; forming at least a first layer of conductive material over the region on said surface whereat said conductive stud and line are to be formed; forming a layer of dual tone photoresist over said conductive material, said dual tone photoresist including at least two sensitizers responsive to radiation of different wavelengths; exposing said dual tone photoresist to at least two different wavelengths of radiation through a single mask so as to form first, second, and third regions having different development characteristics; developing said first region to exposure an underlying portion of said conductive material; etching the exposed portion of conductive material using the remaining dual tone photoresist as a mask to form said conductive line; blanket exposing said dual tone photoresist to radiation such that said second region has the same development characteristics as said first region; developing said second region so as to expose more of said conductive material; etching the newly exposed conductive material using the remaining dual tone photoresist as a mask to provide said stud; and removing the dual tone photoresist.
Claim 2
Independent Claim
210 words
A method of forming a conductive stud self-aligned on a conductive line, comprising the steps of: providing a semiconductor device having a surface over which it is desired to form said conductive line and stud; forming at least a first layer of conductive material over the region on said surface whereat said conductive stud and line are to be formed; forming a layer of dual tone photoresist over said conductive material, said dual tone photoresist including at least two sensitizers responsive to radiation of different wavelengths; exposing said dual tone photoresist to at least two different wavelengths of radiation through a single mask so as to form first, second, and third regions having different development characteristics; developing said first region to exposure an underlying portion of said conductive material; etching the exposed portion of conductive material using the remaining dual tone photoresist as a mask to form said conductive line; blanket exposing said dual tone photoresist to radiation such that said second region has the same development characteristics as said first region; developing said second region so as to expose more of said conductive material; etching the newly exposed conductive material using the remaining dual tone photoresist as a mask to provide said stud; and removing the dual tone photoresist.
Claim 3
Dependent Claim
103 words
A method in accordance with claim 1 wherein: said step of forming at least a layer of conductive material comprises forming a stack including a first layer of conductive material, a layer of conductive etch stop, and a second layer of conductive material consecutively over said surface; the first etch step including etching through said stack at least to said conductive etch stop; the second etch step including etching through the newly exposed portion of said stack at least to said etch stop while simultaneously etching any remaining portion of said first conductive layer exposed during the first etch step to said surface.
Claim 4
Independent Claim
223 words
A method of forming a conductive stud self-aligned on a conductive line, comprising the steps of: providing a semiconductor device having a surface over which it is desired to form said conductive line and stud; forming at least a first layer of insulating material over the region on said surface whereat said conductive stud and line are to be formed; forming a layer of dual tone photoresist over said insulating material, said dual tone photoresist including at least two sensitizers responsive to radiation of different wavelengths; exposing said dual tone photoresist to at least two different wavelengths of radiation through a mask so as to form first, second, and third regions having different development characteristics; developing said first region to expose an underlying portion of said insulating material; etching the exposed portion of insulating material using the remaining dual tone photoresist as a mask to form a matrix for forming said conductive stud; blanket exposing said dual tone photoresist to radiation such that said second region has the same development characteristics as said first region; developing said second region so as to expose more of said insulating material; etching the newly exposed insulating material using the remaining dual tone photoresist as a mask to provide a matrix for forming said conductive line; and filling said stud and line matrices with a conductive material.
Claim 5
Independent Claim
223 words
A method of forming a conductive stud self-aligned on a conductive line, comprising the steps of: providing a semiconductor device having a surface over which it is desired to form said conductive line and stud; forming at least a first layer of insulating material over the region on said surface whereat said conductive stud and line are to be formed; forming a layer of dual tone photoresist over said insulating material, said dual tone photoresist including at least two sensitizers responsive to radiation of different wavelengths; exposing said dual tone photoresist to at least two different wavelengths of radiation through a mask so as to form first, second, and third regions having different development characteristics; developing said first region to expose an underlying portion of said insulating material; etching the exposed portion of insulating material using the remaining dual tone photoresist as a mask to form a matrix for forming said conductive stud; blanket exposing said dual tone photoresist to radiation such that said second region has the same development characteristics as said first region; developing said second region so as to expose more of said insulating material; etching the newly exposed insulating material using the remaining dual tone photoresist as a mask to provide a matrix for forming said conductive line; and filling said stud and line matrices with a conductive material.
Claim 6
Dependent Claim
105 words
A method in accordance with claim 3 wherein: said step of forming at least a layer of insulating material comprises forming a stack including a first layer of insulating material, a layer of insulating etch stop, and a second layer of insulating material consecutively over said surface; the first etch step including etching through said stack at least to said insulating etch stop; the second etch step including etching through the newly exposed portion of said stack at least to said insulating etch stop while simultaneously etching through any remaining portion of said first insulating layer exposed during said first etch step to said surface.
References Cited (Backward Citations)
US3930857A
Cited
US4315984A
Cited
US4579812A
Cited
US4541893A
Cited
EP0220578A2
Cited
US4789648A
Cited
US4721689A
Cited
US4767723A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-03-04 | 1994-09-03 | 1995-03-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-03-04 | 1998-09-03 | 1999-03-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-03-04 | 2002-09-03 | 2003-03-05 | $7700.00 | Window Closed / Lapsed |