US4994881A
Expired / Lapsed
US
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Bipolar transistor
Assignee: Sony Corp
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Filing: 1989-02-13
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Granted: 1991-02-19
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Expires: 2009-02-13
Abstract
Abstract An improved bipolar transistor is a vertical type bipolar transistor the base region of which is composed of a graft base region, an intrinsic base region separated from the graft base region and having an emitter region in its inside, and a link impurity diffusion region linking these regions. In the preparation, the graft base region is formed by diffusion of impurities from the base contact electrode layer and the emitter region formed in the intrinsic base region may be formed in self-alignment. In the vicinity of the junction between the base region and the semiconductor substrate, there is formed a diffusion suppression region composed of an impurity diffusion region of a conductivity type opposite to the conductivity type of the base region and adapted for preventing the depth of junction from being increased.
Inventors
- 👤 Takayuki Gomi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 06:24
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/13; H10D62/137; H10D62/138; H10D10/00; H10D10/01; H10D10/051; H10D62/60
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
200 words
A bipolar transistor in which a base region of a second conductivity type is formed in a semiconductor substrate of a first conductivity type and an emitter region of a first conductivity type is formed in the semiconductor region to provide a vertical type PNP or NPN, comprising a semiconductor substrate of a first conductivity type having an exterior planar surface and with which a collector electrode is connected, a device insulation region selectively formed for facing to the surface of said semiconductor substrate, and a base region consisting of a graft base region formed on the exterior planar surface of said semiconductor substrate surrounded by said device insulation region, said graft base region being formed by diffusion of impurities from a base contact electrode extending on said surface, an intrinsic base region formed at a distance from said graft base region and including an emitter region, and a link impurity diffusion region linking said intrinsic base region and said graft base region, whereby a diffusion suppression region formed by introduction of the impurities of the first conductivity type is provided in the vicinity of the junction between said base region and the semiconductor substrate of the first conductivity type.
Claim 2
Dependent Claim
200 words
A bipolar transistor in which a base region of a second conductivity type is formed in a semiconductor substrate of a first conductivity type and an emitter region of a first conductivity type is formed in the semiconductor region to provide a vertical type PNP or NPN, comprising a semiconductor substrate of a first conductivity type having an exterior planar surface and with which a collector electrode is connected, a device insulation region selectively formed for facing to the surface of said semiconductor substrate, and a base region consisting of a graft base region formed on the exterior planar surface of said semiconductor substrate surrounded by said device insulation region, said graft base region being formed by diffusion of impurities from a base contact electrode extending on said surface, an intrinsic base region formed at a distance from said graft base region and including an emitter region, and a link impurity diffusion region linking said intrinsic base region and said graft base region, whereby a diffusion suppression region formed by introduction of the impurities of the first conductivity type is provided in the vicinity of the junction between said base region and the semiconductor substrate of the first conductivity type.
Claim 3
Dependent Claim
52 words
The bipolar transistor according to claim 1 wherein the semiconductor substrate of the first conductivity type is formed by providing a buried layer of the first conductivity type on the silicon substrate of the second conductivity type and an epitaxial layer of a first conductivity type is formed on the buried layer.
Claim 4
Dependent Claim
34 words
The bipolar transistor according to claim 2 wherein the depth of junction between the intrinsic base region and the epitaxial layer has a peak of the concentration of impurities of the diffusion suppression region.
Claim 5
Dependent Claim
66 words
The bipolar transistor according to any one of claims 1 to 3 wherein the intrinsic base region and emitter region are formed by diffusing impurities from a polysilicon layer through a opening of an interlayer insulating film covering a base contact electrode, the polysilicon layer being formed on a sidewall formed on the lateral side of a opening of base contact electrode and an insulating film.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-02-18 | 1994-08-20 | 1995-02-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-02-18 | 1998-08-20 | 1999-02-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-02-18 | 2002-08-20 | 2003-02-19 | $7700.00 | Window Closed / Lapsed |