Abstract A uniphase, buried-channel, semiconductor charge transfer device wherein a portion of each cell includes an inversion layer, or "virtual electrode" at the semiconductor surface, shielding that region from any gate-induced change in potential. Each cell is comprised of four regions (I, II, III, IV) wherein the characteristic impurity profile of each region determines the maximum potential generated therein for the gate "on" and gate "off" conditions. Clocking the gate causes the potential maxima in regions I and II to cycle above and below the fixed potential maxima in regions III and IV beneath the virtual electrode. Directionality of charge transfer is thereby achieved, since the potential maximum for region II ( phi maxII) remains greater than for region I ( phi maxI) and phi maxIV> phi maxIII, for both gate conditions. A self-aligned process for fabrication is provided, including a number of ion implant stages to fix the required impurity profiles in each cell for generating the correct potential profiles for charge propagation. CCD imagers, memory devices, and analog processors are contemplated systems wherein the invention is to be implemented.
A buried channel charge transfer device, comprising: (a) an insulated gate on a semiconductor substrate of one conductivity type with a buried channel of an opposite conductivity type formed therein; and (b) at least one electrode on said substrate between said gate and channel, said electrode electrically connected to a fixed potential, whereby substantially zero potential change in said channel portion adjacent said electrode occurs due to changes in the potential of said gate.
Claim 2
Dependent Claim
74 words
A buried channel charge transfer device, comprising: (a) an insulated gate on a semiconductor substrate of one conductivity type with a buried channel of an opposite conductivity type formed therein; and (b) at least one electrode on said substrate between said gate and channel, said electrode electrically connected to a fixed potential, whereby substantially zero potential change in said channel portion adjacent said electrode occurs due to changes in the potential of said gate.
Claim 3
Dependent Claim
26 words
The device of claim 30, further comprising (a) a channel stop; and (b) said electrode is doped region of said substrate extending to said channel stop.
Claim 4
Dependent Claim
12 words
The device of claim 2, wherein: (a) said semiconductor substrate is silicon.