Patent US4992136A successfully refreshed from Google Patents.
US4992136A
Expired / Lapsed
US
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Dry etching method
Assignee: Hitachi Ltd
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Filing: 1988-07-25
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Granted: 1991-02-12
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Expires: 2008-07-25
Abstract
Abstract An article to be etched is contacted with a plasma of a mixed gas containing an etching gas and a film forming gas or a surface modification gas at a low temperature to effect the dry etching of the article, whereby the selectivity of etching can be made very high and the inclination angle of the side wall of pattern can be controlled at a desired level.
Inventors
- 👤 Shinichi Tachi
- 👤 Kazunori Tsujimoto
- 👤 Sadayuki Okudaira
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 11:23
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/26; H10P50/264; H10P50/266; H10P50/24; H10P50/242; H10P50/246; H10P50/267; H10P50/268; H10P50/28; H10P50/282; H10P50/283
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
176 words
A dry etching method for selectively etching an article, wherein the article to be selectively etched, having a resist film as a mask, is placed in a reaction chamber of a dry etching apparatus; is contacted with a plasma of a gas to etch an exposed surface of the article, the gas being a mixed gas comprising (1) an etching gas and (2) a film forming gas or a surface modification gas and the temperature of the article to be etched being maintained at 0° C. or below during etching, whereby the article can be etched with a high selectivity with respect to the resist film and with a tapered sectional shape; and is selectively etched; wherein the article to be etched is silicon; wherein the mixed gas includes the film forming gas, and the film forming gas is at least one member selected from the group consisting of CCl 4 , CF 4 , CHF 3 , CHCl 3 , SiF 4 and SiCl 4 ; and wherein the etching gas is SF 6 .
Claim 2
Dependent Claim
176 words
A dry etching method for selectively etching an article, wherein the article to be selectively etched, having a resist film as a mask, is placed in a reaction chamber of a dry etching apparatus; is contacted with a plasma of a gas to etch an exposed surface of the article, the gas being a mixed gas comprising (1) an etching gas and (2) a film forming gas or a surface modification gas and the temperature of the article to be etched being maintained at 0° C. or below during etching, whereby the article can be etched with a high selectivity with respect to the resist film and with a tapered sectional shape; and is selectively etched; wherein the article to be etched is silicon; wherein the mixed gas includes the film forming gas, and the film forming gas is at least one member selected from the group consisting of CCl 4 , CF 4 , CHF 3 , CHCl 3 , SiF 4 and SiCl 4 ; and wherein the etching gas is SF 6 .
Claim 3
Dependent Claim
22 words
A dry etching method according to claim 1, wherein the amount of the film forming gas is 20 mol % or more.
Claim 4
Dependent Claim
156 words
A dry etching method for selectively etching an article, wherein the article to be selectively etched, having a resist film as a mask, is placed in a reaction chamber of a dry etching apparatus; is contacted with a plasma of a gas to etch an exposed surface of the article, the gas being a mixed gas comprising (1) an etching gas and (2) a film forming gas or a surface modification gas and the temperature of the article to be etched being maintained at 0° C. or below during etching, whereby the article can be etched with a high selectivity with respect to the resist film and with a tapered sectional shape; and is selectively etched; wherein the article to be etched is aluminum; wherein the mixed gas includes the film forming gas, and the film forming gas is selected from CCl 4 and SiCl 4 ; and wherein the etching gas is Cl 2 .
Claim 5
Dependent Claim
156 words
A dry etching method for selectively etching an article, wherein the article to be selectively etched, having a resist film as a mask, is placed in a reaction chamber of a dry etching apparatus; is contacted with a plasma of a gas to etch an exposed surface of the article, the gas being a mixed gas comprising (1) an etching gas and (2) a film forming gas or a surface modification gas and the temperature of the article to be etched being maintained at 0° C. or below during etching, whereby the article can be etched with a high selectivity with respect to the resist film and with a tapered sectional shape; and is selectively etched; wherein the article to be etched is aluminum; wherein the mixed gas includes the film forming gas, and the film forming gas is selected from CCl 4 and SiCl 4 ; and wherein the etching gas is Cl 2 .
Claim 6
Dependent Claim
20 words
A dry etching method according to claim 3, wherein the amount of the film forming gas is 5-40 mol %.
Claim 7
Dependent Claim
171 words
A dry etching method for selectively etching an article, wherein the article to be selectively etched, having a resist film as a mask, is placed in a reaction chamber of a dry etching apparatus; is contacted with a plasma of a gas to etch an exposed surface of the article, the gas being a mixed gas comprising (1) an etching gas and (2) a film forming gas or a surface modification gas and the temperature of the article to be etched being maintained at 0° C. or below during etching, whereby the article can be etched with a high selectivity with respect to the resist film and with a tapered sectional shape; and is selectively etched; wherein the article to be etched is selected from the group consisting of a tungsten film a molybdenum film, a tungsten silicide film and a molybdenum silicide film; wherein the mixed gas includes the film forming gas, and the film forming gas is CCl 4 ; and wherein the etching gas is SF 6 .
Claim 8
Dependent Claim
171 words
A dry etching method for selectively etching an article, wherein the article to be selectively etched, having a resist film as a mask, is placed in a reaction chamber of a dry etching apparatus; is contacted with a plasma of a gas to etch an exposed surface of the article, the gas being a mixed gas comprising (1) an etching gas and (2) a film forming gas or a surface modification gas and the temperature of the article to be etched being maintained at 0° C. or below during etching, whereby the article can be etched with a high selectivity with respect to the resist film and with a tapered sectional shape; and is selectively etched; wherein the article to be etched is selected from the group consisting of a tungsten film a molybdenum film, a tungsten silicide film and a molybdenum silicide film; wherein the mixed gas includes the film forming gas, and the film forming gas is CCl 4 ; and wherein the etching gas is SF 6 .
Claim 9
Dependent Claim
20 words
A dry etching method according to claim 5, wherein the amount of the film forming gas is 5-30 mol %.
Claim 10
Dependent Claim
163 words
A dry etching method for selectively etching an article, wherein the article to be selectively etched, having a resist film as a mask, is placed in a reaction chamber of a dry etching apparatus; is contacted with a plasma of a gas to etch an exposed surface of the article, the gas being a mixed gas comprising (1) an etching gas and (2) a film forming gas or a surface modification gas and the temperature of the article to be etched being maintained at 0° C. or below during etching, whereby the article can be etched with a high selectivity with respect to the resist film and with a tapered sectional shape; and is selectively etched; wherein the resist film is a photoresist film; wherein said article is made of Si; said etching gas is SF 6 ; and said film forming gas or surface modification gas is selected from the group consisting of CCl 4 , CHF 3 and NH 3 .
Claim 11
Dependent Claim
163 words
A dry etching method for selectively etching an article, wherein the article to be selectively etched, having a resist film as a mask, is placed in a reaction chamber of a dry etching apparatus; is contacted with a plasma of a gas to etch an exposed surface of the article, the gas being a mixed gas comprising (1) an etching gas and (2) a film forming gas or a surface modification gas and the temperature of the article to be etched being maintained at 0° C. or below during etching, whereby the article can be etched with a high selectivity with respect to the resist film and with a tapered sectional shape; and is selectively etched; wherein the resist film is a photoresist film; wherein said article is made of Si; said etching gas is SF 6 ; and said film forming gas or surface modification gas is selected from the group consisting of CCl 4 , CHF 3 and NH 3 .
Claim 12
Dependent Claim
160 words
A dry etching method for selectively etching an article, wherein the article to be selectively etched, having a resist film as a mask, is placed in a reaction chamber of a dry etching apparatus; is contacted with a plasma of a gas to etch an exposed surface of the article, the gas being a mixed gas comprising (1) an etching gas and (2) a film forming gas or a surface modification gas and the temperature of the article to be etched being maintained at 0° C. or below during etching, whereby the article can be etched with a high selectivity with respect to the resist film and with a tapered sectional shape; and is selectively etched; wherein the resist film is a photoresist film; wherein said article is made of Al; said etching gas is Cl 2 ; and said film forming gas or surface modification gas is selected from the group consisting of SiCl 4 and CCl 4 .
Claim 13
Dependent Claim
160 words
A dry etching method for selectively etching an article, wherein the article to be selectively etched, having a resist film as a mask, is placed in a reaction chamber of a dry etching apparatus; is contacted with a plasma of a gas to etch an exposed surface of the article, the gas being a mixed gas comprising (1) an etching gas and (2) a film forming gas or a surface modification gas and the temperature of the article to be etched being maintained at 0° C. or below during etching, whereby the article can be etched with a high selectivity with respect to the resist film and with a tapered sectional shape; and is selectively etched; wherein the resist film is a photoresist film; wherein said article is made of Al; said etching gas is Cl 2 ; and said film forming gas or surface modification gas is selected from the group consisting of SiCl 4 and CCl 4 .
Claim 14
Dependent Claim
151 words
A dry etching method for selectively etching an article, wherein the article to be selectively etched, having a resist film as a mask, is placed in a reaction chamber of a dry etching apparatus; is contacted with a plasma of a gas to etch an exposed surface of the article, the gas being a mixed gas comprising (1) an etching gas and (2) a film forming gas or a surface modification gas and the temperature of the article to be etched being maintained at 0° C. or below during etching, whereby the article can be etched with a high selectivity with respect to the resist film and with a tapered sectional shape; and is selectively etched; wherein the resist film is a photoresist film; wherein said article is made of W; said etching gas is SF 6 ; and said film forming gas or surface modification gas is CCl 4 .
Claim 15
Dependent Claim
151 words
A dry etching method for selectively etching an article, wherein the article to be selectively etched, having a resist film as a mask, is placed in a reaction chamber of a dry etching apparatus; is contacted with a plasma of a gas to etch an exposed surface of the article, the gas being a mixed gas comprising (1) an etching gas and (2) a film forming gas or a surface modification gas and the temperature of the article to be etched being maintained at 0° C. or below during etching, whereby the article can be etched with a high selectivity with respect to the resist film and with a tapered sectional shape; and is selectively etched; wherein the resist film is a photoresist film; wherein said article is made of W; said etching gas is SF 6 ; and said film forming gas or surface modification gas is CCl 4 .
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