Patent US4990978A successfully refreshed from Google Patents.
US4990978A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Mitsubishi Electric Corp
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Filing: 1989-01-13
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Granted: 1991-02-05
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Expires: 2009-01-13
Abstract
Abstract A semiconductor substrate is provided thereon with an insulated gate bipolar transistor which is a composite element of a pnpn thyristor and an N-channel MOS-FET. In order to monitor operating current of the insulated gate bipolar transistor, a monitor terminal is provided in addition to collector, emitter and gate terminals. The operating current of the insulated gate bipolar transistor is monitored through the monitor terminal to perform appropriate protective operation when the operating current reaches a critical region, thereby to prevent occurrence of a latch-up phenomenon.
Inventors
- 👤 Hisao Kondoh
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 12:14
CPC Classifications
H; H10; H10D; H10D12/00; H10D12/411; H10D12/441
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
180 words
A semiconductor device comprising: a first conductivity type semiconductor substrate having first and second major surfaces; a second conductivity type semiconductor layer formed on said first major surface of said semiconductor substrate; a first conductivity type first region formed in a surface of said semiconductor layer; a first conductivity type second region formed in the surface of said semiconductor layer; a second conductivity type third region formed in each surface of said first and second regions; a first electrode formed on said second major surface of said semiconductor substrate; a second electrode formed on adjacent surfaces of said first and third regions, an insulation film formed on said each surface of said first and second regions between the surfaces of said semiconductor layer and said third region; a control electrode formed on said insulation film for controlling main current on the semiconductor device flowing between said first and second electrodes; a third electrode formed on adjacent surfaces of said second and third regions; and, means for monitoring current flowing through said third electrode in order to monitor said main current.
Claim 2
Dependent Claim
180 words
A semiconductor device comprising: a first conductivity type semiconductor substrate having first and second major surfaces; a second conductivity type semiconductor layer formed on said first major surface of said semiconductor substrate; a first conductivity type first region formed in a surface of said semiconductor layer; a first conductivity type second region formed in the surface of said semiconductor layer; a second conductivity type third region formed in each surface of said first and second regions; a first electrode formed on said second major surface of said semiconductor substrate; a second electrode formed on adjacent surfaces of said first and third regions, an insulation film formed on said each surface of said first and second regions between the surfaces of said semiconductor layer and said third region; a control electrode formed on said insulation film for controlling main current on the semiconductor device flowing between said first and second electrodes; a third electrode formed on adjacent surfaces of said second and third regions; and, means for monitoring current flowing through said third electrode in order to monitor said main current.
Claim 3
Dependent Claim
195 words
A semiconductor device comprising: a first conductivity type semiconductor substrate having first and second major surfaces; a second conductivity type semiconductor layer formed on said first major surface of said semiconductor substrate; a first conductivity type first region formed in a surface of said semiconductor layer; a first conductivity type second region formed in the surface of said semiconductor layer; a second conductivity type third region formed in a surface of said first region; a first electrode formed on said second major surface of said semiconductor substrate; a second electrode formed on adjacent surfaces of said first and third regions, an insulation film formed on the surface of said first region between the surfaces of said semiconductor layer and said third region; a control electrode formed on said insulation film for controlling main current of the semiconductor device flowing between said first and second electrodes; a third electrode formed on a surface of said second region; and, means for monitoring current flowing through said third electrode in order to monitor a component of said main current, which flows between said first and second electrodes through said semiconductor substrate, said semiconductor layer and said first region.
Claim 4
Dependent Claim
195 words
A semiconductor device comprising: a first conductivity type semiconductor substrate having first and second major surfaces; a second conductivity type semiconductor layer formed on said first major surface of said semiconductor substrate; a first conductivity type first region formed in a surface of said semiconductor layer; a first conductivity type second region formed in the surface of said semiconductor layer; a second conductivity type third region formed in a surface of said first region; a first electrode formed on said second major surface of said semiconductor substrate; a second electrode formed on adjacent surfaces of said first and third regions, an insulation film formed on the surface of said first region between the surfaces of said semiconductor layer and said third region; a control electrode formed on said insulation film for controlling main current of the semiconductor device flowing between said first and second electrodes; a third electrode formed on a surface of said second region; and, means for monitoring current flowing through said third electrode in order to monitor a component of said main current, which flows between said first and second electrodes through said semiconductor substrate, said semiconductor layer and said first region.
Claim 5
Dependent Claim
182 words
A semiconductor device comprising: a first conductivity type semiconductor substrate having first and second major surfaces; a second conductivity type semiconductor layer formed on said first major surface of said semiconductor substrate; a first conductivity type first region formed in a surface of said semiconductor layer; a second conductivity type second region formed in a surface of said first region; a first electrode formed on said second major surface of said semiconductor substrate; a second electrode formed on adjacent surfaces of said first and second regions, an insulation film formed on the surface of said first region between the surfaces of said semiconductor layer and said second region; a control electrode formed on said insulation film for controlling a main current of the semiconductor device flowing between said first and second electrodes; a third electrode formed on the surface of said first region; and, means for monitoring current flowing through said third electrode in order to monitor a component of said main current, which flows between said first and second electrodes through said semiconductor substrate, said semiconductor layer and said first region.
Claim 6
Dependent Claim
182 words
A semiconductor device comprising: a first conductivity type semiconductor substrate having first and second major surfaces; a second conductivity type semiconductor layer formed on said first major surface of said semiconductor substrate; a first conductivity type first region formed in a surface of said semiconductor layer; a second conductivity type second region formed in a surface of said first region; a first electrode formed on said second major surface of said semiconductor substrate; a second electrode formed on adjacent surfaces of said first and second regions, an insulation film formed on the surface of said first region between the surfaces of said semiconductor layer and said second region; a control electrode formed on said insulation film for controlling a main current of the semiconductor device flowing between said first and second electrodes; a third electrode formed on the surface of said first region; and, means for monitoring current flowing through said third electrode in order to monitor a component of said main current, which flows between said first and second electrodes through said semiconductor substrate, said semiconductor layer and said first region.
Claim 7
Dependent Claim
32 words
A semiconductor device in accordance with claim 3, wherein said third electrode is electrically connected to the surface of said first region between the surfaces of said layer and said second region.
Claim 8
Dependent Claim
39 words
A semiconductor device in accordance with claim 3, wherein said insulation film and said control electrode formed thereon have a recessed portion, said third electrode being electrically connected to the surface of said first region in said recessed portion.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1994-02-04 | 1994-08-06 | 1995-02-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-02-04 | 1998-08-06 | 1999-02-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-02-04 | 2002-08-06 | 2003-02-05 | $7700.00 | Window Closed / Lapsed |