Bi-directional, feed through emitter-detector for optical fiber transmission lines

Claim 2

A unitary emitter-detector semiconductive diode device with the capability of direct optical coupling at lateral surfaces of the diode device to optical transmission lines, the device having means for coupling to electrical forward bias, and electrical reverse bias between an optical emitter mode, and an optical detector mode and contact means for coupling to external electrical circuits, having in combination a heavily doped semiconductor active layer of one conductivity type, one surface of said active layer forming a p-n junction with one surface of a coextensive lightly doped semiconducting layer of conductivity opposite to that of the active layer; a first confining layer having a surface in contact with another surface of said active heavily doped semiconducting layer a second confining layer having a surface in contact with another surface of said lightly doped semiconducting layer a first optical waveguide coupled to the lateral surface of the first confining layer, and a second optical waveguide coupled to the lateral surface of the second confining layer to transmit in both directions by direct coupling from lateral surfaces of said device and indentations formed in opposing surfaces of said diode, said optical waveguides being respectively positioned in said indentations.

Claim 3

A unitary emitter-detector semi-conductive diode device as claimed in claim 1 having a support layer adjoining each of said first and second confining layers, the indentations formed in said opposing surfaces being centrally formed in said support layers to provide a thin layer in each support layer between the indentation and the adjoining confining layer.

Claim 4

A unitary emitter-detector semiconductive diode device as claimed in claim 1 having a support layer of gallium arsenide outermost from the other layers.

Claim 5

A unitary emitting-detector semiconductive diode device as claimed in claim 1 wherein said optical waveguides are first and second optical fibers.

Claim 6

A unitary emitter-detector semiconductive diode device as claimed in claim 4 wherein said first confining layer has a region of higher conductivity than said first confining layer, said region being of lesser diameter than said first optical fiber.

Claim 7

A unitary emitter-detector semiconductive diode device with the capability of direct optical coupling at lateral surfaces of the diode device to optical transmission lines for transmitting photons, the device having means for coupling to electrical forward bias, electrical reverse bias and absence of bias for selection between an optical emitter mode, and optical detector mode and a quiescent mode, and contact mean for coupling to external electrical circuits, having a combination a heavily doped semiconductor active layer of one conductivity type, one surface of said active layer forming a p-n junction with one surface of a coextensive lightly doped semiconducting layer of a conductivity opposite to that of the active layer; a first confining layer having a surface in contact with another surface of said active heavily doped semiconducting layer, a second confining layer having a surface in contact with another surface of said lightly doped semiconducting layer, a first optical waveguide for transmitting photons coupled to the lateral surfaces of the first confining layer, a second optical waveguide coupled to the lateral surface of the second confining layer with its axis normal to the junction to transmit in both directions by direct coupling from lateral surfaces of said device, and means on opposite side of said p-n junction for guiding and concentrating the recombination of carriers within the diode.

Claim 8

A unitary emitter-detector semiconductive diode device with the capability of direct optical coupling at lateral surfaces of the diode device to optical transmission lines for transmitting photons, the device having means for coupling to electrical forward bias, electrical reverse bias and absence of bias for selection between an optical emitter mode, and optical detector mode and a quiescent mode, and contact mean for coupling to external electrical circuits, having a combination a heavily doped semiconductor active layer of one conductivity type, one surface of said active layer forming a p-n junction with one surface of a coextensive lightly doped semiconducting layer of a conductivity opposite to that of the active layer; a first confining layer having a surface in contact with another surface of said active heavily doped semiconducting layer, a second confining layer having a surface in contact with another surface of said lightly doped semiconducting layer, a first optical waveguide for transmitting photons coupled to the lateral surfaces of the first confining layer, a second optical waveguide coupled to the lateral surface of the second confining layer with its axis normal to the junction to transmit in both directions by direct coupling from lateral surfaces of said device, and means on opposite side of said p-n junction for guiding and concentrating the recombination of carriers within the diode.

Claim 9

A unitary emitter-detector diode as claimed in claim 6 having in the first confining layer a region of higher conductivity than the conductivity of said first confining layer.

Claim 10

A unitary emitter-detector diode device as claimed in claim 7 having said region of higher conductivity than the conductivity of said confining layer centrally positioned in said diode and coaxial with the optical fibers.

Claim 11

A unitary emitter-detector semiconductive diode device as claimed in claim 6 wherein each confining layer has a region of higher conductivity than the confining layer.

Claim 12

A unitary emitter-detector diode device as claimed in claim 6 wherein said first and second optical waveguides are first and second optical fibers.

Claim 13

A unitary emitter-detector semi-conductive device as claimed in claim 10 having in the second confining layer a region of higher conductivity than the conductivity of said second confining layer.

Claim 14

A unitary emitter-detector diode as claimed in claim 11 wherein said higher conductivity region has a diameter less than the diameter of the second optical fiber.

Claim 15

A unitary emitter-detector semiconductive diode device with the capability of direct optical coupling to optical transmission lines, the device having means for coupling to electrical forward bias, electrical reverse bias and absence of bias for selection between an optical emitter mode, an optical detector mode and a quiescent mode, and contact means for coupling to external electrical circuits, having in combination a heavily doped semiconductor active layer of one conductivity type having a thickness of 0.5 μm, one surface of said active layer forming a p-n junction with one surface of a coextensive lightly doped semiconducting layer of conductivity opposite to that of the active layer having a thickness of 1-3 μm, a first confining layer having a surface in contact with another surface of said active heavily doped semiconducting layer and having a thickness of 1 μm, a second confining layer having a surface in contact with another surface of said lightly doped semiconducting layer having a thickness of 1 μm, a first optical fiber coupled to a surface of the diode, and a second optical fiber coupled to a surface of the diode, said fibers having a diameter of the order of 50 μm, and indentations formed in opposing surfaces of said diode, said optical fibers being respectively positioned in said indentations.

Claim 16

A unitary emitter-detector semiconductive diode device with the capability of direct optical coupling to optical transmission lines, the device having means for coupling to electrical forward bias, electrical reverse bias and absence of bias for selection between an optical emitter mode, an optical detector mode and a quiescent mode, and contact means for coupling to external electrical circuits, having in combination a heavily doped semiconductor active layer of one conductivity type having a thickness of 0.5 μm, one surface of said active layer forming a p-n junction with one surface of a coextensive lightly doped semiconducting layer of conductivity opposite to that of the active layer having a thickness of 1-3 μm, a first confining layer having a surface in contact with another surface of said active heavily doped semiconducting layer and having a thickness of 1 μm, a second confining layer having a surface in contact with another surface of said lightly doped semiconducting layer having a thickness of 1 μm, a first optical fiber coupled to a surface of the diode, and a second optical fiber coupled to a surface of the diode, said fibers having a diameter of the order of 50 μm, and indentations formed in opposing surfaces of said diode, said optical fibers being respectively positioned in said indentations.