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JPS566482A Expired / Lapsed JP ⏱️ 0.0 years remaining

Light controled semiconductor light emitting element

Assignee: Fujitsu Ltd
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Filing: 1979-06-27
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Granted: —
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Expires: 1999-06-27
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Abstract

Abstract PURPOSE:To irradiate and stop the light having any wavelength preset in response to the irradiation and stop of an external light in a light controlled semiconductor light emitting element by forming a light absorbing region for optically shielding both a light switching region and a light emitting region therebetween. CONSTITUTION:A light emitting element consists of a light switching region formed on GaAlAs layers 1, 2, 3, a light absorbing region made of GaAs layer 4, and a light emitting region made of GaAlAs layers 5, 6, 7. When input light (a) is irradiated thereto, the light switching region becomes conductive to supply a current from the bias voltage supply source 14 to the light emitting region to flow a forward current to a PN junction included therein to generate an output light (b) therefrom.

Inventors

  • 👤 Kazuo Kondo

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-11-06 11:04
CPC Classifications
H; H10; H10F; H10F55/00; H10F55/10; H10F55/15; H10F55/155

Claims Analysis

Total Claims: 0
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References Cited (Backward Citations)

JPS4924086A Cited

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