Electrically tunable semiconductor laser with ridge waveguide

Claim 2

A semiconductor laser with a MCRW structure on a substrate of III-V semiconductor material, having an active layer, a ridge, a substrate contact and a ridge contact, comprising: the active layer, an intermediate layer, a stripe-shaped tuning layer flanked by a first lateral region layer and by a second lateral region layer being grown onto the substrate on top of one another, and a stripe-shaped cover layer and a contact layer being grown on top of one another above this tuning layer; a substrate contact being applied on a side opposed from the overgrown side of the substrate and the ridge contact being applied on the contact layer; the first lateral region layer being provided with a first tuning contact; and the second lateral region layer being provided with a second tuning contact.

Claim 3

The semiconductor laser according to claim 1, wherein a first passivation layer is applied onto a region of a surface of the semiconductor material between the first tuning contact and the ridge contact and wherein a second passivation layer is applied on a region of the surface of the semiconductor material between the second tuning contact and the ridge contact.

Claim 4

The semiconductor laser according to claim 1, wherein the substrate, the first lateral region layer and the second lateral region layer are n-conductively doped; wherein the intermediate layer, the tuning layer and the cover layer are p-conductively doped; and wherein the contact layer is highly p-conductively doped to a sufficient degree for low-impedance transition to the ridge contact.

Claim 5

The semiconductor laser according to claim 1, wherein the substrate, the first lateral region layer and the second lateral region layer are p-conductively doped; wherein the intermediate layer, the tuning layer and the cover layer are n-conductively doped; and wherein the contact layer is highly n-conductively doped to a sufficient degree for low-impedance transition to the ridge contact.

Claim 6

The semiconductor laser according to claim 1, wherein the substrate, the intermediate layer, the first lateral region layer, the second lateral region layer and the cover layer are InP; wherein the active layer and the tuning layer are InGaAsP; and wherein the contact layer is InGaAs.

Claim 7

The semiconductor laser according to claim 1, wherein the active layer and the tuning layer are quaternary semiconductor material.

Claim 8

A semiconductor laser with a MCRW structure on a substrate of III-V semiconductor material, having an active layer, a ridge, a substrate contact and a ridge contact, comprising: the active layer, an intermediate layer, a stripe-shaped tuning layer flanked by a first lateral region layer and by a second lateral region layer being grown onto the substrate on top of one another, and a stripe-shaped cover layer and a contact layer being grown on top of one another above this tuning layer; a substrate contact being applied on a side opposed from the overgrown side of the substrate and the ridge contact being applied on the contact layer; the first lateral region layer being provided with a first tuning contact; the second lateral region layer being provided with a second tuning contact; a first passivation layer applied onto a region of a surface of the semiconductor material between the first tuning contact and the ridge contact; and a second passivation layer applied on a region of the surface of the semiconductor material between the second tuning contact and the ridge contact.

Claim 9

A semiconductor laser with a MCRW structure on a substrate of III-V semiconductor material, having an active layer, a ridge, a substrate contact and a ridge contact, comprising: the active layer, an intermediate layer, a stripe-shaped tuning layer flanked by a first lateral region layer and by a second lateral region layer being grown onto the substrate on top of one another, and a stripe-shaped cover layer and a contact layer being grown on top of one another above this tuning layer; a substrate contact being applied on a side opposed from the overgrown side of the substrate and the ridge contact being applied on the contact layer; the first lateral region layer being provided with a first tuning contact; the second lateral region layer being provided with a second tuning contact; a first passivation layer applied onto a region of a surface of the semiconductor material between the first tuning contact and the ridge contact; and a second passivation layer applied on a region of the surface of the semiconductor material between the second tuning contact and the ridge contact.

Claim 10

The semiconductor laser according to claim 7, wherein the substrate, the first lateral region layer and the second lateral region layer are n-conductively doped; wherein the intermediate layer, the tuning layer and the cover layer are p-conductively doped; and wherein the contact layer is highly p-conductively doped to a sufficient degree for low-impedance transition to the ridge contact.

Claim 11

The semiconductor laser according to claim 7, wherein the substrate, the first lateral region layer and the second lateral region layer are p-conductively doped; wherein the intermediate layer, the tuning layer and the cover layer are n-conductively doped; and wherein the contact layer is highly n-conductively doped to a sufficient degree for low-impedance transition to the ridge contact.

Claim 12

The semiconductor laser according to claim 7, wherein the substrate, the intermediate layer, the first lateral region layer, the second lateral region layer and the cover layer are InP; wherein the active layer and the tuning layer are InGaAsP; and wherein the contact layer is InGaAs.

Claim 13

The semiconductor laser according to claim 7, wherein the active layer and the tuning layer are quaternary semiconductor material.