EP0260439A2
Expired / Lapsed
EP
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Semiconductor light emission system
Assignee: Mitsubishi Electric Corp
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Filing: 1987-08-12
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Granted: —
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Expires: 2007-08-12
Abstract
Abstract A semiconductor light emission system, comprising a semiconductor laser part constituted of a second conductive current strictured layer with a striped groove perforated therein, a first conductive clad layer, a first or second conductive active layer a second conductive clad layer on a first conductive substrate, and a second conductive - first conductive - second conductive bipolar transistor part constituted of said second conductive current strictured layer, first conductive clad layer, first or second conductive active layer, second conductive active layer in a position other than the semiconductor laser part.
Inventors
- 👤 Tetsuya Mitsubishi Denki Kabushiki Kaisha Yagi
- 👤 Misao Mitsubishi Denki Kabushiki Kaisha Hironaka
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 21:25
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/06; H01S5/062; H01S5/06203; H10; H10H; H10H29/00; H10H29/10; H01S5/0014; H01S5/0035; H01S5/06209; H01S5/06213; H01S5/20; H01S5/22; H01S5/223; H01S5/2232
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
91 words
(1) A semiconductor light emission systemm, comprising a semiconductor laser part constituted of a second conductive current strictured layer with a striped groove perforated therein, a first conductive clad layer, a first or second conductive active layer, a second conductive clad layer on a first conductive substrate, and a second conductive - first conductive - second conductive bipolar transistor part constituted of said second conductive current strictured layer, first conductive clad layer, first or second conductive active layer, second conductive active layer in a position other than the semiconductive laser part.
Claim 2
Dependent Claim
19 words
(2) The semiconductive light emission system as defined in claim 1, the semiconductor being constituted of an AℓGaAs material.
Claim 3
Dependent Claim
19 words
(3) The semiconductor light emission system as defined in claim 1, the semiconductor being constituted of an InGaAs material.
Claim 4
Dependent Claim
84 words
(4) A semiconductor light emission system, comprising a semiconductor laser part constituted of a second conductive current strictured layer with a striped groove perforated therein, a first conductive clad layer, a first or second conductive active layer, a second conductive clad layer on a first conductive substrate, and a first conductive - second conductive - first conductive bipolar transistor part constituted of said first conductive substrate, second conductive current strictured layer, first conductive clad layer in a position other than the semiconductor laser part.
Claim 5
Dependent Claim
19 words
(5) The semiconductor light emission system as defined in claim 4, the semiconductor being constituted of an AℓGaAs material.
Claim 6
Dependent Claim
19 words
(6) The semiconductor light emission system as defined in Claim 4, the semiconductor being constituted of an InGaAs material.
Claim 7
Dependent Claim
99 words
(7) A semiconductor light emission system, comprising a semiconductor laser part constituted of a first conductive clad layer, a first or second conductive active layer, a second conductive first clad layer, a first conductive current strictured layer with a striped groove perforated therein, a second conductive second clad layer on a first conductive substrate, and a first conductive - second conductive - first conductive bipolar transistor part constituted of said first conductive clad layer, first or second conductive active layer, second conductive first clad layer, first conductive current strictured layer in a position other than the semiconductor laser part.
Claim 8
Dependent Claim
19 words
(8) The semiconductor light emission system as defined in claim 7, the semiconductor being constituted of an AℓGaAs material.
Claim 9
Dependent Claim
19 words
(9) The semiconductor light emission system as defined in claim 7, the semiconductor being consituted of an InGaAs material.
Claim 10
Dependent Claim
94 words
(10) A semiconductor light emission system, comprising a semiconductor laser part constituted of a first conductive clad layer, a first or second conductive active layer, a second conductive first clad layer, a first conductive current strictured layer with a striped groove perforated therein, a second conductive second clad layer on a first conductive substrate, and a second conductive - first conductive - second conductive bipolar transistor part constituted of said second conductive first clad layer, first conductive current strictured layer, second conductive second clad layer in a position other than the semiconductor laser part.
Claim 11
Dependent Claim
19 words
(11) The semiconductor light emission system as defined in claim 10, the semiconductor being constituted of an AℓGaAs material.
Claim 12
Dependent Claim
19 words
(12) The semiconductor light emission system as defined in claim 10, the semiconductor being constituted of an InGaAs material.
References Cited (Backward Citations)
No citation records indexed.
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