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Patent US4987472A successfully refreshed from Google Patents.
US4987472A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Compound semiconductor epitaxial wafer
Assignee: Shin-Etsu Handotai Co Ltd
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Filing: 1989-09-19
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Granted: 1991-01-22
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Expires: 2009-09-19
Abstract
Abstract An epitaxial wafer of gallium phosphide single crystal having an epitaxial layer of gallium phosphide arsenide mixed crystal grown on the surface by the method of vapor-phase epitaxial growth can be freed from surface defects and greatly improved in respect of the electroluminescent intensity of the light-emitting diode prepared therefrom, yield of the light-emitting diodes which can be obtained from said single epitaxial wafer the growth rate of the epitaxial layer when the substrate wafer has a crystallographic surface plane which is inclined from the {001} plane in the <110> direction by 8° to 15° or a crystallographically equivalent plane thereto.
Inventors
- 👤 Masahisa Endo
- 👤 Nobuhiko Noto
- 👤 Toshiharu Takahashi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 09:35
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/824; H10H20/01; H10H20/011; H10H20/013; H10H20/817
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
205 words
A wafer of gallium phosphide single crystal having an epitaxial layer of gallium phosphide arsenide mixed crystal formed on one surface, which comprises: (A) a substrate of a gallium phosphide single crystal in the form of a wafer; and (B) an epitaxial layer of gallium phosphide arsenide mixed crystal having a composition represented by the formula GaAs 1-x P x , where x is zero or a positive number not exceeding 1, formed on the surface of the substrate by the method of vapor-phase deposition, in which the surface plane of the substrate wafer is selected from the group consisting of: (a) the crystallographic planes inclined from the (001) plane in the [110] or [110] direction; (b) the crystallographic planes inclined from the (001] plane in the [110] or [110] direction; (c) the crystallographic planes inclined from the (100) plane in the [011] or [011] direction; (d) the crystallographic planes inclined from the (100) plane in the [011] or [011] direction; (e) the crystallographic planes inclined from the (010) plane in the [101] or [101] direction; and (f) the crystallographic planes inclined from the (010) plane in the [101] or [101] direction, the angles of inclination being each in the range from 8° to 15°.
Claim 2
Dependent Claim
205 words
A wafer of gallium phosphide single crystal having an epitaxial layer of gallium phosphide arsenide mixed crystal formed on one surface, which comprises: (A) a substrate of a gallium phosphide single crystal in the form of a wafer; and (B) an epitaxial layer of gallium phosphide arsenide mixed crystal having a composition represented by the formula GaAs 1-x P x , where x is zero or a positive number not exceeding 1, formed on the surface of the substrate by the method of vapor-phase deposition, in which the surface plane of the substrate wafer is selected from the group consisting of: (a) the crystallographic planes inclined from the (001) plane in the [110] or [110] direction; (b) the crystallographic planes inclined from the (001] plane in the [110] or [110] direction; (c) the crystallographic planes inclined from the (100) plane in the [011] or [011] direction; (d) the crystallographic planes inclined from the (100) plane in the [011] or [011] direction; (e) the crystallographic planes inclined from the (010) plane in the [101] or [101] direction; and (f) the crystallographic planes inclined from the (010) plane in the [101] or [101] direction, the angles of inclination being each in the range from 8° to 15°.
Claim 3
Dependent Claim
29 words
The wafer as claimed in claim 1 wherein the angle of inclination of the substrate surface in the direction of <110> is in the range from 8° to 12°.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-01-21 | 1994-07-23 | 1995-01-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-01-21 | 1998-07-23 | 1999-01-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-01-21 | 2002-07-23 | 2003-01-22 | $7700.00 | Window Closed / Lapsed |