Electro-static discharge protection device for CMOS integrated circuit inputs

Claim 2

An ESD protection device for an integrated circuit provided in a substrate having an input pad, comprising: n-well to n + clamping means, including a first input node coupled to the input pad and a first output node coupled to ground potential of the integrated circuit, for sinking to ground at least a first portion of an input current associated with an electro-static voltage discharge to the input pad and for clamping said first input node at a first clamp voltage which is less than the electro-static discharge voltage, comprising: an first n-well, having a depth and a doping concentration, provided in the substrate, an n + region, having a larger doping concentration and a shallower depth than said first n-well, said n + region being provided in the substrate and spaced apart from said first n-well to define a channel therebetween and contacting said channel, and a second n-well having a smaller doping concentration than said n + region said second n-well being provided in said substrate under said n + region; second clamping means, having a second input node, for sinking to ground a second portion of the input current and for clamping said second input node at a voltage which is less than the first clamp voltage; and limiting means for coupling said first input node to said second input node and for limiting the flow of current from said first input node to said second input node.

Claim 3

An electro-static discharge ESD protection device for an integrated circuit provided in a p-type substrate and having an input pad, comprising: n + to n + clamping means, comprising: first and second n-well regions formed in said substrate and having a depth and a doping concentration, and a first n + region formed in said first n-well, said first n + region having a larger doping concentration and a shallower depth than said first n-well region and being electrically interconnected with said input pad. a second n + region partially formed in said first n-well region, said second n + region having a larger doping concentration and a shallower depth than said first n-well region, said second n + region being spaced apart from said first n + region so that a portion of said first n-well forms a ballast resistor which electrically interconnects said first and second n + regions, a third n + region partially formed in said second n-well region, said third n + region having a larger doping concentration and a shallower depth than said second n-well region, said third n + region being electrically interconnected with ground potential, said second and third n + regions being spaced apart to define a channel therebetween, each of said second and third n + regions contacting said channel, for sinking to ground at least a first portion of an input current associated with an electro-static voltage discharge to the input pad and for clamping said input pad at a first clamp voltage which is less than the electro-static discharge voltage; second clamping means, having an input node, for sinking to ground a second portion of the input current and for clamping said input node at a voltage which is less than the first clamp voltage; and first limiting means for electrically interconnecting said input pad and said input node and for limiting the flow of current from said input pad to said input node.

Claim 4

An electro-static discharge ESD protection device for an integrated circuit provided in a p-type substrate and having an input pad, comprising: n + to n + clamping means, comprising: first and second n-well regions formed in said substrate and having a depth and a doping concentration, and a first n + region formed in said first n-well, said first n + region having a larger doping concentration and a shallower depth than said first n-well region and being electrically interconnected with said input pad. a second n + region partially formed in said first n-well region, said second n + region having a larger doping concentration and a shallower depth than said first n-well region, said second n + region being spaced apart from said first n + region so that a portion of said first n-well forms a ballast resistor which electrically interconnects said first and second n + regions, a third n + region partially formed in said second n-well region, said third n + region having a larger doping concentration and a shallower depth than said second n-well region, said third n + region being electrically interconnected with ground potential, said second and third n + regions being spaced apart to define a channel therebetween, each of said second and third n + regions contacting said channel, for sinking to ground at least a first portion of an input current associated with an electro-static voltage discharge to the input pad and for clamping said input pad at a first clamp voltage which is less than the electro-static discharge voltage; second clamping means, having an input node, for sinking to ground a second portion of the input current and for clamping said input node at a voltage which is less than the first clamp voltage; and first limiting means for electrically interconnecting said input pad and said input node and for limiting the flow of current from said input pad to said input node.

Claim 5

An ESD protection device according to claim 2, wherein said second clamping means comprises a thin gate-oxide, long channel, enhancement mode FET having a gate coupled to ground potential.

Claim 6

An ESD protection device according to claim 2, wherein said ESD protection device comprises a plurality of n + to N + clamping means, said first n + region of each of said plural n + to n + clamping means being electrically coupled in parallel to said input pad.

Claim 7

An electro-static discharge (ESD) protection device for an integrated circuit formed in a substrate and having an input pad, comprising: first clamping means, having a first input node coupled to the input pad, for sinking to ground at least a first portion of an input current associated with a electro-static voltage discharge to the pad and for clamping said first input node at a first clamp voltage which is less than the electro-static discharge voltage, said first clamping means comprising: a plurality of n + to n + transistor means each having first and second n-wells formed in the substrate each having a depth and a doping concentration, first and second n + regions partially formed in respective ones of said n-wells and having a larger doping concentration and a shallower depth than the corresponding n-well, said n + regions being spaced apart to define a channel region therebetween, each said second n + region being electrically connected to ground potential, and a plurality of first limiting means, each having an input coupled in parallel with the inputs of each of the other limiting means to said first input node and an output coupled to said first n + region of a respective one of said n + to n + transistor means; second clamping means, having a second input node, for sinking to ground a second portion of the input current and for clamping said second input node at a voltage which is less than the first clamp voltage; and second limiting means for coupling said first input node to said second input node and for limiting the flow of current from said first input node to said second input node.

Claim 8

An electro-static discharge (ESD) protection device for an integrated circuit formed in a substrate and having an input pad, comprising: first clamping means, having a first input node coupled to the input pad, for sinking to ground at least a first portion of an input current associated with a electro-static voltage discharge to the pad and for clamping said first input node at a first clamp voltage which is less than the electro-static discharge voltage, said first clamping means comprising: a plurality of n + to n + transistor means each having first and second n-wells formed in the substrate each having a depth and a doping concentration, first and second n + regions partially formed in respective ones of said n-wells and having a larger doping concentration and a shallower depth than the corresponding n-well, said n + regions being spaced apart to define a channel region therebetween, each said second n + region being electrically connected to ground potential, and a plurality of first limiting means, each having an input coupled in parallel with the inputs of each of the other limiting means to said first input node and an output coupled to said first n + region of a respective one of said n + to n + transistor means; second clamping means, having a second input node, for sinking to ground a second portion of the input current and for clamping said second input node at a voltage which is less than the first clamp voltage; and second limiting means for coupling said first input node to said second input node and for limiting the flow of current from said first input node to said second input node.

Claim 9

An ESD protection device according to claim 5, wherein: said plural n + to N + transistor means each comprise a punch-through FET; said first n + region forms an n + drain region; said second n + region forms an n + source region; and said plural first limiting means each comprise a ballast resistor formed by a portion of said first n-well in corresponding, respective ones of said punch-through FETs.

Claim 10

An ESD protection device according to claim 5, wherein: said plural n + to n + transistor means each comprise a lateral NPN bipolar transistor; said first n + region forms an N + collector region; said second n + region forms an n + emitter region; and said plural first limiting means each comprise a ballast resistor formed by a portion of said first n-well in corresponding, respective ones of said lateral NPN bipolar transistors.

Claim 11

An electro-static discharge (ESD) protection device for an integrated circuit provided on a substrate and having an input pad, comprising: n-well to n + clamping means, comprising: a first input node electrically interconnected to the input pad, a first n-well region having a first doping concentration provided in the substrate, an n + source contact region, having a second doping concentration greater than the first doping concentration, said n + source contact region having a first portion provided in the substrate and a second portion provided in said first n-well and being electrically interconnected to ground potential, an second n-well region, having a third doping concentration which is less than said second doping concentration, provided in the substrate, said first portion of said n + source contact region and said second n-well region being spaced apart to define a channel therebetween, said channel directly contacting said first portion of said n + source contact region, and an n + drain contact region, having a fourth doping concentration greater than the third doping concentration, provided in the substrate in said second n-well contact region and electrically interconnected to said first input node, for sinking to ground at least a first portion of an input current associated with an electro-static voltage discharge to the input pad and for clamping said first input node to a first clamp voltage which is less than the electro-static discharge voltage; second clamping means, having a second input node, for sinking to ground a second portion of the input current and for clamping said second input node at a voltage which is less than the first clamp voltage; and limiting means for electrically interconnecting said first and second input nodes and for limiting the flow of current from said first input node to said second input node.

Claim 12

An electro-static discharge (ESD) protection device for an integrated circuit provided on a substrate and having an input pad, comprising: n-well to n + clamping means, comprising: a first input node electrically interconnected to the input pad, a first n-well region having a first doping concentration provided in the substrate, an n + source contact region, having a second doping concentration greater than the first doping concentration, said n + source contact region having a first portion provided in the substrate and a second portion provided in said first n-well and being electrically interconnected to ground potential, an second n-well region, having a third doping concentration which is less than said second doping concentration, provided in the substrate, said first portion of said n + source contact region and said second n-well region being spaced apart to define a channel therebetween, said channel directly contacting said first portion of said n + source contact region, and an n + drain contact region, having a fourth doping concentration greater than the third doping concentration, provided in the substrate in said second n-well contact region and electrically interconnected to said first input node, for sinking to ground at least a first portion of an input current associated with an electro-static voltage discharge to the input pad and for clamping said first input node to a first clamp voltage which is less than the electro-static discharge voltage; second clamping means, having a second input node, for sinking to ground a second portion of the input current and for clamping said second input node at a voltage which is less than the first clamp voltage; and limiting means for electrically interconnecting said first and second input nodes and for limiting the flow of current from said first input node to said second input node.

Claim 13

An ESD protection device according to claim 8, comprising plural n-well to n + clamping means, said input node of each of said plural n-well to n + clamping means being connected to the input node of each of the other plural n-well to n + clamping means in parallel.

Claim 14

An electro-static discharge (ESD) protection device for an integrated circuit provided on in a substrate and having an input pad, comprising: n + to n + clamping means, comprising: a first input node electrically interconnected to the input pad, first and second n-wells provided in the substrate, each n-well having a doping concentration, an n + source contact region, having a doping concentration greater than the doping concentration of said first n-well, said n + source contact region having a first portion provided in the substrate and a second portion provided in said first n-well and electrically interconnected to ground potential, and an n + drain contact region, having a doping concentration greater than the doping concentration of said second n-well, said n + drain contact region having a first portion provided in the substrate and a second portion provided in said second n-well and electrically interconnected with said first input node, said n + source contact region and said n + drain contact region being spaced apart to define a channel therebetween, said channel directly contacting said first portion of said n + source contact region and said first portion of said n + drain contact region, for sinking to ground at least a first portion of an input current associated with an electro-static voltage discharge to the input pad and for clamping said first input node to a first clamp voltage which is less than the electro-static discharge voltage; second clamping means, having a second input node, for sinking to ground a second portion of the input current and for clamping said second input node at a voltage which is less than the first clamp voltage; and limiting means for electrically interconnecting said first and second input nodes and for limiting the flow of current from said first input node to said second input node.

Claim 15

An electro-static discharge (ESD) protection device for an integrated circuit provided on in a substrate and having an input pad, comprising: n + to n + clamping means, comprising: a first input node electrically interconnected to the input pad, first and second n-wells provided in the substrate, each n-well having a doping concentration, an n + source contact region, having a doping concentration greater than the doping concentration of said first n-well, said n + source contact region having a first portion provided in the substrate and a second portion provided in said first n-well and electrically interconnected to ground potential, and an n + drain contact region, having a doping concentration greater than the doping concentration of said second n-well, said n + drain contact region having a first portion provided in the substrate and a second portion provided in said second n-well and electrically interconnected with said first input node, said n + source contact region and said n + drain contact region being spaced apart to define a channel therebetween, said channel directly contacting said first portion of said n + source contact region and said first portion of said n + drain contact region, for sinking to ground at least a first portion of an input current associated with an electro-static voltage discharge to the input pad and for clamping said first input node to a first clamp voltage which is less than the electro-static discharge voltage; second clamping means, having a second input node, for sinking to ground a second portion of the input current and for clamping said second input node at a voltage which is less than the first clamp voltage; and limiting means for electrically interconnecting said first and second input nodes and for limiting the flow of current from said first input node to said second input node.

Claim 16

An ESD protection device according to claim 10, comprising plural n + to n + clamping means, said input node of each of said plural n + to n + clamping means being connected to said input node of each of said other n + to n + clamping means in parallel.