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US4984047A
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Solid-state image sensor
Assignee: Eastman Kodak Co
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Filing: 1988-03-21
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Granted: 1991-01-08
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Expires: 2008-03-21
Abstract
Abstract A solid-state image sensor is disclosed which comprises a pn photodiode formed in a P-type substrate. A charge-coupled device is disposed adjacent the photodiode for receiving signal carriers from the diode. A lateral-overflow drain is disposed adjacent the photodiode for receiving carriers from the photodiode. In order to provide a simplified image sensor, a virtual gate is formed between the photodiode and the drain to effect the flow of excess carriers from the photodiode.
Inventors
- 👤 Eric G. Stevens
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 05:20
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/15; H10F39/158; H10F39/153
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
111 words
A solid-state image sensor comprising: a semiconductor substrate of a first conductivity type; a photosensitive region of a second conductivity type formed in said substrate; a drain region in said photosensitive region, said drain region being of said second conductivity type and being of enhanced conductivity; a virtual-gate region formed in said photosensitive region for controlling the flow of excess signal carriers from said photosensitive region into said drain region, said virtual-gate region extending along at least one side of said drain region and spaced therefrom, said virtual-gate region being of said first conductivity type and of enhanced conductivity; and means for reading out signal carriers generated in said photosensitive region.
Claim 2
Dependent Claim
111 words
A solid-state image sensor comprising: a semiconductor substrate of a first conductivity type; a photosensitive region of a second conductivity type formed in said substrate; a drain region in said photosensitive region, said drain region being of said second conductivity type and being of enhanced conductivity; a virtual-gate region formed in said photosensitive region for controlling the flow of excess signal carriers from said photosensitive region into said drain region, said virtual-gate region extending along at least one side of said drain region and spaced therefrom, said virtual-gate region being of said first conductivity type and of enhanced conductivity; and means for reading out signal carriers generated in said photosensitive region.
Claim 3
Dependent Claim
42 words
A solid-state image sensor, as defined in claim 1, wherein a pinning layer is formed on said photosensitive region adjoining said gate region, and said pinning layer being of said first conductivity type and of a lower conductivity than said gate region.
Claim 4
Dependent Claim
20 words
A solid-state image sensor, as defined in claim 1, wherein said means for reading out signal carriers is a charge-coupled-device.
Claim 5
Dependent Claim
20 words
A solid-state image sensor, as defined in claim 3, wherein said charge-coupled device includes a buried channel in said substrate.
Claim 6
Dependent Claim
18 words
A solid-state image sensor, as defined in claim 4, wherein said charge coupled device includes a CCD-clock electrode.
Claim 7
Dependent Claim
22 words
A solid-state image sensor, as defined in claim 1, wherein the first and second conductivity types are P- and N-conductivity types respectively.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-01-07 | 1994-07-09 | 1995-01-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-01-07 | 1998-07-09 | 1999-01-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-01-07 | 2002-07-09 | 2003-01-08 | $7700.00 | Window Closed / Lapsed |