Patent US4982693A successfully refreshed from Google Patents.
US4982693A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor vapor phase growing apparatus
Assignee: Shibaura Machine Co Ltd
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Filing: 1983-03-04
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Granted: 1991-01-08
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Expires: 2003-03-04
Abstract
Abstract In a semiconductor vapor phase growing apparatus wherein a semiconductor wafer is heated in a reaction furnace, and an output of a source for heating, the temperature of the wafer, and flow quantities of gases supplied to the reaction furnace for vapor phase growing a semiconductor on the wafer by a chemical reaction of the gases are controlled by a control unit according to a predetermined sequences, there are provided a temperature detector for detecting the temperature of the wafer and output control means controlling the output of the source according to a given reference value. The control unit is consitituted by memory means storing a program of executing the sequences and linearly raising and lowering the wafer temperature at a predetermined temperature gradient in a plurality of divided time lateral units by making different the rates of temperature change in respective time interval units, and a CPU for processing the program.
Inventors
- 👤 Hitoshi Ebata
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:00
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B25/16; C23; C23C; C23C16/00; C23C16/44; C23C16/52; H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
166 words
In a semiconductor vapor phase growing apparatus wherein a semiconductor wafer is disposed in a reaction furnace, which includes a source for heating and a gas supply means and the output of said source for heating, the temperature of the wafer, and flow quantities of gases supplied to the reaction furnace for vapor phase growing a semiconductor on the wafer by a chemical reaction of the gases are controlled by a control unit according to predetermined sequences, the improvement comprising temperature detecting means for detecting the temperature of the wafer in the reaction furnace, and output control means controlling the output of said source of heating according to a given reference value, wherein said control unit includes memory means for storing a program for executing said sequences and linearly raising and lowering the wafer temperature at a predetermined temperature gradient in a plurality of divided time interval units by making different rates of temperature change in respective time interval units, and means for processing said program.
Claim 2
Dependent Claim
166 words
In a semiconductor vapor phase growing apparatus wherein a semiconductor wafer is disposed in a reaction furnace, which includes a source for heating and a gas supply means and the output of said source for heating, the temperature of the wafer, and flow quantities of gases supplied to the reaction furnace for vapor phase growing a semiconductor on the wafer by a chemical reaction of the gases are controlled by a control unit according to predetermined sequences, the improvement comprising temperature detecting means for detecting the temperature of the wafer in the reaction furnace, and output control means controlling the output of said source of heating according to a given reference value, wherein said control unit includes memory means for storing a program for executing said sequences and linearly raising and lowering the wafer temperature at a predetermined temperature gradient in a plurality of divided time interval units by making different rates of temperature change in respective time interval units, and means for processing said program.
Claim 3
Dependent Claim
81 words
The apparatus according to claim 1 further including means for taking the temperature of said wafer as a reference at the time of executing sequences of varying the temperature, and wherein said processing means includes means for determining the temperature reference value by correcting said rates of temperature change, in respective time interval units, in amounts adequate to reach a last target temperature in respective sequences, and means for applying said corrected rates of temperature changes to said source of heating.
Claim 4
Dependent Claim
24 words
The apparatus according to claim 1 wherein said memory means comprises a ROM storing a program storing program sequences for executing said temperature changes.
Claim 5
Dependent Claim
38 words
The apparatus according to claim 1 wherein said reaction furnace comprises a rotary support adapted to support a plurality of said semiconductor wafers, and said source for heating is a high frequency induction coil for heating said wafers.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-01-07 | 1994-07-09 | 1995-01-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-01-07 | 1998-07-09 | 1999-01-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-01-07 | 2002-07-09 | 2003-01-08 | $7700.00 | Window Closed / Lapsed |