US4982248A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Gated structure for controlling fluctuations in mesoscopic structures
Assignee: International Business Machines Corp
•
Filing: 1989-01-11
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Granted: 1991-01-01
•
Expires: 2009-01-11
Abstract
Abstract A new solid state device based on mesoscopic phenomena is described. A structure of the mesoscopic device includes phase altering scattering sites at various energy levels disposed in proximity to a conductive channel. The carries in the channel, being isolated by a potential barrier, are not in substantial scattering interaction with the phase altering scattering sites in the absence of a sufficiently large voltage at the gate of the mesoscopic device. Increasing the potential at the gate, imposes a localized electric field along the channel, increases the energy levels of the carriers in the channel, and allows the carriers to interact with the phase altering scattering sites, thereby controllably varying the conductance of the channel.
Inventors
- 👤 Robert B. Laibowitz
- 👤 Corwin P. Umbach
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 12:14
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/40
Claims Analysis
Total Claims: 42
Claim 1
Independent Claim
122 words
A solid state device comprising: a substrate of a given bandgap having a source region, a drain region, and a conductive channel disposed therebetween; phase altering scattering sites being at various energy levels and in proximity to said conductive channel; barrier means for creating a potential barrier to isolate said phase altering scattering sites from carriers in said conductive channel, said barrier means isolated in the absence of an applied electric field; and means for impressing a localized electric field disposed over said barrier means along said conductive channel to vary the energy level of carriers in said channel, such that said phase altering scattering sites change the phase altering interactions of said carriers and control the conductivity of said conductive channel.
Claim 2
Dependent Claim
122 words
A solid state device comprising: a substrate of a given bandgap having a source region, a drain region, and a conductive channel disposed therebetween; phase altering scattering sites being at various energy levels and in proximity to said conductive channel; barrier means for creating a potential barrier to isolate said phase altering scattering sites from carriers in said conductive channel, said barrier means isolated in the absence of an applied electric field; and means for impressing a localized electric field disposed over said barrier means along said conductive channel to vary the energy level of carriers in said channel, such that said phase altering scattering sites change the phase altering interactions of said carriers and control the conductivity of said conductive channel.
Claim 3
Dependent Claim
16 words
A solid state device in accordance with claim 1 wherein said substrate is a semiconductor material.
Claim 4
Dependent Claim
38 words
A solid state device in accordance with claim 2 wherein said means for impressing a localized electric field is a metal gate and said barrier means is a Schottky barrier formed by said metal gate over said semiconductor.
Claim 5
Dependent Claim
22 words
A solid state device in accordance with claim 3 wherein said phase altering scattering sites are made of high spin-orbit scattering material.
Claim 6
Dependent Claim
19 words
A solid state device in accordance with claim 3 wherein said phase altering scattering sites are elastic scattering material.
Claim 7
Dependent Claim
18 words
A solid state device in accordance with claim 3 wherein said phase altering scattering sites are magnetic material.
Claim 8
Dependent Claim
24 words
A solid state device in accordance with claim 3 wherein said phase altering scattering sites are disposed along the edges of said conductive channel.
Claim 9
Dependent Claim
23 words
A solid state device in accordance with claim 1 wherein said means for impressing a localized electric field is an insulated conductive gate.
Claim 10
Dependent Claim
22 words
A solid state device in accordance with claim 8 wherein said phase altering scattering sites are made of high spin-orbit scattering material.
Claim 11
Dependent Claim
19 words
A solid state device in accordance with claim 8 wherein said phase altering scattering sites are elastic scattering material.
Claim 12
Dependent Claim
18 words
A solid state device in accordance with claim 8 wherein said phase altering scattering sites are magnetic material.
Claim 13
Dependent Claim
24 words
A solid state device in accordance with claim 8 wherein said phase altering scattering sites are disposed along the edges of said conductive channel.
Claim 14
Dependent Claim
29 words
A solid state device in accordance with claim 1 wherein said barrier means is a barrier layer having a bandgap greater than said given bandgap overlying said conductive channel.
Claim 15
Dependent Claim
27 words
A solid state device in accordance with claim 13 wherein said phase altering scattering sites are disposed in the form of randomly positioned atoms of such sites.
Claim 16
Dependent Claim
24 words
A solid state device in accordance with claim 13 wherein said phase altering scattering sites are disposed along the edges of said conductive channel.
Claim 17
Dependent Claim
27 words
A solid state device in accordance with claim 13 wherein said phase altering scattering sites are disposed in the form of a layer of elastic scattering material.
Claim 18
Dependent Claim
136 words
A solid state device comprising: a substrate of a given bandgap having a source region, a drain region, and a conductive channel disposed therebetween; a scattering material having phase altering scattering sites at various energy levels; barrier means for creating a potential barrier to isolate said phase altering scattering sites from carriers in said conductive channel, said barrier means isolated in the absence of an applied electric field; an insulating layer having a bandgap greater than the bandgap of said barrier means disposed over said scattering material; and means for impressing a localized electric field over said insulating layer along said conductive channel to vary the energy level of carriers in said channel, such that said phase altering scattering sites change the phase altering interactions of said carriers and control the conductivity of said conductive channel.
Claim 19
Dependent Claim
136 words
A solid state device comprising: a substrate of a given bandgap having a source region, a drain region, and a conductive channel disposed therebetween; a scattering material having phase altering scattering sites at various energy levels; barrier means for creating a potential barrier to isolate said phase altering scattering sites from carriers in said conductive channel, said barrier means isolated in the absence of an applied electric field; an insulating layer having a bandgap greater than the bandgap of said barrier means disposed over said scattering material; and means for impressing a localized electric field over said insulating layer along said conductive channel to vary the energy level of carriers in said channel, such that said phase altering scattering sites change the phase altering interactions of said carriers and control the conductivity of said conductive channel.
Claim 20
Dependent Claim
32 words
A solid state device in accordance with claim 17 wherein said substrate is GaAs, said barrier means is AlGaAs, and said means for impressing a localized electric field is a conductive gate.
Claim 21
Dependent Claim
26 words
A solid state device in accordance with claim 18 wherein said phase altering scattering sites are disposed in the form of a layer of magnetic material.
Claim 22
Dependent Claim
28 words
A solid state device in accordance with claim 18 wherein said phase altering scattering sites are disposed in the form of a layer of high spin-orbit scattering material.
Claim 23
Dependent Claim
27 words
A solid state device in accordance with claim 18 wherein said phase altering scattering sites are disposed in the form of a layer of elastic scattering material.
Claim 24
Dependent Claim
56 words
A solid state device in accordance with claim 17 wherein said substrate is a semiconductor material, said scattering material is a metallic layer, said barrier means is a Schottky barrier formed by said metallic layer of said scattering material over said semiconductor substrate material, and said means for impressing localized electric field is a conductive gate.
Claim 25
Dependent Claim
19 words
A solid state device in accordance with claim 22 wherein said metallic layer of said scattering material is nickel.
Claim 26
Dependent Claim
133 words
A solid state device comprising: a semiconductor substrate of a given bandgap having a source region, a drain region, and a conductive channel disposed therebetween; phase altering scattering sites being at various energy levels and in proximity to said conductive channel; Schottky barrier means for creating a potential barrier to isolate said phase altering scattering sites from carriers in said conductive channel, said barrier means isolated in the absence of an applied electric field; and metal gate means disposed over said semiconductor substrate for impressing a localized electric field to said Schottky barrier means along said conductive channel so as to vary the energy level of carriers in said channel, and to change the phase altering interactions of said carriers with said phase altering scattering sites and controlling the conductivity of said channel.
Claim 27
Dependent Claim
133 words
A solid state device comprising: a semiconductor substrate of a given bandgap having a source region, a drain region, and a conductive channel disposed therebetween; phase altering scattering sites being at various energy levels and in proximity to said conductive channel; Schottky barrier means for creating a potential barrier to isolate said phase altering scattering sites from carriers in said conductive channel, said barrier means isolated in the absence of an applied electric field; and metal gate means disposed over said semiconductor substrate for impressing a localized electric field to said Schottky barrier means along said conductive channel so as to vary the energy level of carriers in said channel, and to change the phase altering interactions of said carriers with said phase altering scattering sites and controlling the conductivity of said channel.
Claim 28
Dependent Claim
22 words
A solid state device in accordance with claim 24 wherein said phase altering scattering sites are made of high spin-orbit scattering material.
Claim 29
Dependent Claim
19 words
A solid state device in accordance with claim 24 wherein said phase altering scattering sites are elastic scattering material.
Claim 30
Dependent Claim
18 words
A solid state device in accordance with claim 24 wherein said phase altering scattering sites are magnetic material.
Claim 31
Dependent Claim
24 words
A solid state device in accordance with claim 24 wherein said phase altering scattering sites are disposed along the edges of said conductive channel.
Claim 32
Dependent Claim
23 words
A solid state device in accordance with claim 24 wherein said means for impressing a localized electric field is an insulated conductive gate.
Claim 33
Dependent Claim
24 words
A solid state device in accordance with claim 29 wherein said phase altering scattering sites are disposed along the edges of said conductive channel.
Claim 34
Dependent Claim
29 words
A solid state device in accordance with claim 24 wherein said barrier means is a barrier layer having a bandgap greater than said given bandgap overlying said conductive channel.
Claim 35
Dependent Claim
27 words
A solid state device in accordance with claim 30 wherein said phase altering scattering sites are disposed in the form of randomly positioned atoms of such sites.
Claim 36
Dependent Claim
24 words
A solid state device in accordance with claim 30 wherein said phase altering scattering sites are disposed along the edges of said conductive channel.
Claim 37
Dependent Claim
27 words
A solid state device in accordance with claim 30 wherein said phase altering scattering sites are disposed in the form of a layer of elastic scattering material.
Claim 38
Dependent Claim
150 words
A solid state device comprising: a GaAs substrate of a given bandgap having a source region, a drain region, and a conductive channel disposed therebetween; a scattering material having phase altering scattering sites at various energy levels; a barrier means of a semiconductor material having a bandgap size higher than that of GaAs for creating a potential barrier to isolate said altering scattering sites from carriers in said conductive channel, said barrier means isolated in the absence of an applied electric field; an insulating layer having a bandgap greater than the bandgap of said barrier means disposed over said scattering material; and conductive means for impressing a localized electric field over said insulating layer along said conductive channel to vary the energy level of carriers in said channel, thereby changing the phase altering interactions of said carriers with said phase altering scattering sites and controlling the conductivity of said channel.
Claim 39
Dependent Claim
150 words
A solid state device comprising: a GaAs substrate of a given bandgap having a source region, a drain region, and a conductive channel disposed therebetween; a scattering material having phase altering scattering sites at various energy levels; a barrier means of a semiconductor material having a bandgap size higher than that of GaAs for creating a potential barrier to isolate said altering scattering sites from carriers in said conductive channel, said barrier means isolated in the absence of an applied electric field; an insulating layer having a bandgap greater than the bandgap of said barrier means disposed over said scattering material; and conductive means for impressing a localized electric field over said insulating layer along said conductive channel to vary the energy level of carriers in said channel, thereby changing the phase altering interactions of said carriers with said phase altering scattering sites and controlling the conductivity of said channel.
Claim 40
Dependent Claim
26 words
A solid state device in accordance with claim 35 wherein said phase altering scattering sites are disposed in the form of a layer of magnetic material.
Claim 41
Dependent Claim
28 words
A solid state device in accordance with claim 34 wherein said phase altering scattering sites are disposed in the form of a layer of high spin-orbit scattering material.
Claim 42
Dependent Claim
27 words
A solid state device in accordance with claim 34 wherein said phase altering scattering sites are disposed i the form of a layer of elastic scattering material.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-12-31 | 1994-07-02 | 1995-01-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-12-31 | 1998-07-02 | 1999-01-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-12-31 | 2002-07-02 | 2003-01-01 | $7700.00 | Window Closed / Lapsed |