Patent US3546779A successfully refreshed from Google Patents.
Patent US866550A successfully refreshed from Google Patents.
Patent US4980338A successfully refreshed from Google Patents.
US4980338A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of producing superconducting ceramic patterns by etching
Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 1988-11-15
•
Granted: 1990-12-25
•
Expires: 2008-11-15
Abstract
Abstract Superconducting ceramic patterns are produced by dry etching. A superconducting ceramic film is deposited by plasma CVD on a semiconductor substrate which is covered with a blocking film in advance. The ceramic film is coated with a photomask followed by dry etching in order to remove portions of the ceramic in accordance with the prescribed pattern. The etchant includes bromine.
Inventors
- 👤 Shunpei Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 18:29
CPC Classifications
H; H10; H10N; H10N60/00; H10N60/01; H10N60/0268; H10N60/0661; H10N60/0688; Y; Y10; Y10S; Y10S505/00; Y10S505/725; Y10S505/728
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
52 words
A superconducting pattern manufacturing method comprising: forming a ceramic film on a substrate, the ceramic film being a high-temperature superconducting oxide; and removing a prescribed portion of said ceramic film, as bromides of constituents of said ceramic, by dry etching utilizing an etchant comprising bromine in order to produce a superconducting pattern.
Claim 2
Dependent Claim
52 words
A superconducting pattern manufacturing method comprising: forming a ceramic film on a substrate, the ceramic film being a high-temperature superconducting oxide; and removing a prescribed portion of said ceramic film, as bromides of constituents of said ceramic, by dry etching utilizing an etchant comprising bromine in order to produce a superconducting pattern.
Claim 3
Dependent Claim
19 words
The method of claim 1 wherein said substrate is a semiconduct substrate within which semiconductor devices will be formed.
Claim 4
Dependent Claim
37 words
The method of claim 2 further comprising the step of forming a blocking film on said semiconductor substrate in advance of forming said ceramic film in order to prevent said ceramic film from directly contacting said semiconductor.
Claim 5
Dependent Claim
44 words
The method of claim 3 wherein said blocking film comprises a conductive portion with which said superconducting ceramic pattern is electrically connected to a surface portion of said semiconductor substrate and an insulating film which insulates said superconducting ceramic pattern from said semiconductor substrate.
Claim 6
Dependent Claim
18 words
The method of claim 4 wherein said conductive portion is made of platinum, gold, silver, tungsten or titanium.
Claim 7
Dependent Claim
22 words
The method of claim 4 wherein said insulating portion is made of zirconium oxide, YSZ, yttirium oxide, strontium oxide or strontium titanate.
Claim 8
Dependent Claim
18 words
The method of claim 1 wherein said forming step is carried out by a microwave enhanced plasma CVD.
Claim 9
Dependent Claim
16 words
The method of claim 7 wherein said plasma CVD is carried out under a magnetic field.
Claim 10
Dependent Claim
79 words
The method of claim 1 wherein said ceramic film is formed in consistence with the stoichiometric formulae (A 1-x B x ) y Cu z O w X v , where A is one or more elements of Group IIIa of the Periodic Table, the, B is one or more elements of Group IIa of the Periodic Table, including beryllium and magnesium, X is one or more elements of a group consisting of Ge, Sn, Pb, F and C.
Claim 11
Dependent Claim
27 words
The method of claim 9, wherein A is one or more of the rare earth elements and B is one or more of the alkaline earth metals.
Claim 12
Dependent Claim
10 words
The method of claim 1 wherein said etchant includes bromine.
Claim 13
Dependent Claim
12 words
The method of claim 1 wherein said etchant includes CBr 4 .
Claim 14
Dependent Claim
10 words
The method of claim 1 wherein said etchant includes HBr.
Claim 15
Dependent Claim
28 words
The method of claim 1 further comprising the step of covering said ceramic film with a photomask in accordance with said prescribed pattern prior to said removing step.
Claim 16
Dependent Claim
20 words
The method of claim 1 further comprising the step of annealing said ceramic film before or after said removing step.
Claim 17
Dependent Claim
56 words
A superconducting pattern manufacturing method comprising: forming a ceramic film on a substrate, the ceramic film being a high-temperature superconducting oxide; and removing a prescribed portion of said ceramic film, as bromide of the consittuents of said ceramic, by dry etching utilizing an etchant comprising Br 2 or HBr in order to produce a superconducting pattern.
Claim 18
Dependent Claim
56 words
A superconducting pattern manufacturing method comprising: forming a ceramic film on a substrate, the ceramic film being a high-temperature superconducting oxide; and removing a prescribed portion of said ceramic film, as bromide of the consittuents of said ceramic, by dry etching utilizing an etchant comprising Br 2 or HBr in order to produce a superconducting pattern.
References Cited (Backward Citations)
US4557796A
Cited
US4837609A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-12-24 | 1994-06-25 | 1994-12-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-12-24 | 1998-06-25 | 1998-12-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-12-24 | 2002-06-25 | 2002-12-25 | $7700.00 | Window Closed / Lapsed |