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US4977434A
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Field-effect semiconductor device comprising an ancillary electrode
Assignee: Thomson Hybrides et Microondes
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Filing: 1988-07-28
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Granted: 1990-12-11
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Expires: 2008-07-28
Abstract
Abstract A field-effect transistor comprises an ancillary electrode in addition to the source, gate and drain electrodes. In this device, a semiconducting body bears source, gate and drain metallizations which define a main transistor. The metallization of the drain is separated into two parts which are separated by a channel on which is placed a second gate metallization defining a secondary transistor. The two parts of the drain are coupled by this secondary transistor, the channel of which is separated from the main channel. The secondary transistor can be used to control the gain of the main transistor or to modulate its amplitude signal or to mix two frequencies addressed on the two gates.
Inventors
- 👤 Daniel Delagebeaudeuf
- 👤 Henri Derewonko
- 👤 Jean J. Godart
- 👤 Patrick Resneau
- 👤 Pierre Gibeau
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 15:40
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/13; H10D62/149; H10D30/00; H10D30/60; H10D30/611; H10D30/80; H10D30/87; H10D30/873
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
104 words
A field-effect semiconductor device comprising: a semiconductor body formed by a substrate, a source, and at least one active layer; a first gate metallization; a drain metallization made up of two parts, wherein said first gate metallization and said drain metallization define a main transistor with a main channel formed between said gate and drain metallizations, and wherein said two drain metallization parts are separated from each other by a second channel of semiconductor material; a second gate metallization deposited on said second channel of semiconductor material; said two drain metallization parts, said second gate metallization and said second channel defining a second transistor.
Claim 2
Dependent Claim
104 words
A field-effect semiconductor device comprising: a semiconductor body formed by a substrate, a source, and at least one active layer; a first gate metallization; a drain metallization made up of two parts, wherein said first gate metallization and said drain metallization define a main transistor with a main channel formed between said gate and drain metallizations, and wherein said two drain metallization parts are separated from each other by a second channel of semiconductor material; a second gate metallization deposited on said second channel of semiconductor material; said two drain metallization parts, said second gate metallization and said second channel defining a second transistor.
Claim 3
Dependent Claim
23 words
A device according to claim 1 wherein the second channel of the second transistor is distinct from the channel of the main transistor.
Claim 4
Dependent Claim
39 words
A device according to claim 1 wherein the two drain metallizations are biased by a DC voltage V 0 through two chokes of high value, and wherein the second gate is biased by a control voltage V G2 .
Claim 5
Dependent Claim
39 words
A device according to claim 1 wherein the secondary transistor behaves like a variable resistor which couples the two parts of the drain metallizations, said coupling being a function of the difference in potentials V G2 -V O .
Claim 6
Dependent Claim
28 words
A device according to claim 3 wherein the gain of the main transistor is controlled by the voltage V G2 applied to the gate of the second transistor.
Claim 7
Dependent Claim
34 words
A device according to claim 3 wherein the amplitude of the output signal I out of the main transistor is modulated by a variable voltage VG2 applied to the gate of the second transistor.
Claim 8
Dependent Claim
44 words
A device according to claim 3 comprising a mixer of frequencies between a signal V S applied to the first gate and a signal V G2 applied to the second gate, the mixing of the frequencies being done by multiplication by the factor K.
References Cited (Backward Citations)
US4141023A
Cited
US4313126A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-12-10 | 1994-06-11 | 1994-12-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-12-10 | 1998-06-11 | 1998-12-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-12-10 | 2002-06-11 | 2002-12-11 | $7700.00 | Window Closed / Lapsed |