Field effect controlled, bipolar power semiconductor component with silicide layer

Claim 1

A field effect controlled, bipolar semiconductor device, comprising (a) a disk-like semiconductor substrate having first and second parallel main surfaces, wherein the first of said main surfaces is connected to an anode (A), and the second of said main surfaces is connected to a cathode (K); (b) two successive layers provided within said semiconductor substrate extending in parallel with said main surfaces, wherein a first of said successive layers comprises a p-type emitter layer which abuts upon said first main surface, and the second of said successive layers comprises an n-type base layer which abuts upon said second main surface; (c) a plurality of individual p-type regions constituting a p-type base layer and being embedded side by side in said n-type base layer at said second main surface, and being separated from each other by gaps, wherein said n-type base layer emerges in said gaps at said second main surface of said semiconductor substrate; (d) a plurality of individual n-type regions being embedded in each of said p-type regions in a manner such that each said p-type region emerges at said second main surface of said semiconductor substrate at outer sides of said p-type region and between the n-type regions embedded therein; and (e) a gate-cathode structure with alternatingly disposed gate electrodes and cathode contacts provided on said second main surface, wherein one of said cathode contacts is disposed above each of said p-type regions and conductively connected to all n-type regions of the associated p-type region, and makes contact to said p-type region between said n-type regions, and wherein above each of said gaps between adjacent of said p-type regions is disposed one of said gate electrodes and which is electrically insulated from said semiconductor substrate and which covers those parts of said adjacent p-type regions which emerge at said second main surface; and (f) a first conductive layer provided for conductive connection between each of said cathode contacts and the associated n-type regions, said first conductive layer extending on said second main surface of said semiconductor substrate from between respective ones of said cathode contacts and said associated p-type region to all n-type regions of said p-type region, said first conductive layer covering said n-type regions partially and being composed of a metal silicide.