US4454527A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Thyristor having controllable emitter short circuits and a method for its operation
Assignee: Siemens AG
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Filing: 1981-04-09
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Granted: 1984-06-12
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Expires: 2001-04-09
Abstract
Abstract A thyristor which has outer emitter layers of opposite conductivity types and intermediate base layers of respective opposite conductivity types and metal-insulated-semiconductor emitter short circuit structures including a semiconductor region inserted in one of the outer emitters and doped opposite thereto and connected to the electrode carried thereby has an electrically conductive coating, connected to a terminal, carried on the boundary surface of the semiconductor body which contains the emitter layer having the MIS structure, a lateral zone of the conductive coating being insulated from the boundary surface and forming a gate electrode of the MIS structure and another zone which contacts the boundary surface and forms the trigger electrode.
Inventors
- 👤 Hubert Patalong
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 08:02
CPC Classifications
H; H10; H10D; H10D18/00; H10D18/60; H10D18/65; H10D18/655; H10D64/00; H10D64/20; H10D64/27; H10D64/291; H10D84/00; H10D84/101; H10D84/131; H10D84/138
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
222 words
In a thyristor of the type which includes a semiconductor body having a boundary surface and formed of a first emitter of a first conductivity type at the boundary surface, a first base of a second, opposite conductivity type carrying and extending about said emitter up to the boundary surface, a second base of the first conductivity type carrying said first base, a second emitter of the second conductivity type carrying said second base, a first electrode on said first emitter, a second electrode on said second emitter, a trigger electrode on the boundary surface spaced from said first electrode, and at least one metal-insulator-semiconductor controllable emitter short circuit structure for shorting the junction between said first emitter and said first base including a region of said first conductivity type in said first emitter electrically connected to said first electrode, a zone of said first base, a portion of said first emitter, and an insulated gate carried over said emitter portion on said boundary surface, the improvement therein comprising: a conductive layer adapted to receive control voltages and including a first section contacting the zone of the first base and serving as the trigger electrode, and a second section carried insulated over the adjacent portion of the first emitter and serving as the gate electrode of the metal-insulator-semiconductor controllable emitter short circuit.
Claim 2
Dependent Claim
222 words
In a thyristor of the type which includes a semiconductor body having a boundary surface and formed of a first emitter of a first conductivity type at the boundary surface, a first base of a second, opposite conductivity type carrying and extending about said emitter up to the boundary surface, a second base of the first conductivity type carrying said first base, a second emitter of the second conductivity type carrying said second base, a first electrode on said first emitter, a second electrode on said second emitter, a trigger electrode on the boundary surface spaced from said first electrode, and at least one metal-insulator-semiconductor controllable emitter short circuit structure for shorting the junction between said first emitter and said first base including a region of said first conductivity type in said first emitter electrically connected to said first electrode, a zone of said first base, a portion of said first emitter, and an insulated gate carried over said emitter portion on said boundary surface, the improvement therein comprising: a conductive layer adapted to receive control voltages and including a first section contacting the zone of the first base and serving as the trigger electrode, and a second section carried insulated over the adjacent portion of the first emitter and serving as the gate electrode of the metal-insulator-semiconductor controllable emitter short circuit.
Claim 3
Dependent Claim
28 words
The improved thyristor of claim 1, wherein: the first emitter and second base are of n-type conductivity and the first base and second emitter are of p-type conductivity.
Claim 4
Dependent Claim
93 words
The improved thyristor of claim 1, wherein: the first emitter is divided into a plurality of first emitter zones spaced apart in the first base; the first electrode is divided into a plurality of first electrode portions each contacting a respective first emitter zone; the conductive layer is divided into portions disposed between neighboring first emitter zones with each portion including the first section contacting the first base and a pair of the second sections lateral of the first section and over and insulated from edge portions of the neighboring first emitter zones.
Claim 5
Dependent Claim
16 words
The improved thyristor of claim 1, wherein: the metal-insulator-semiconductor controllable short circuits are depletion type structures.
Claim 6
Dependent Claim
16 words
The improved thyristor of claim 1, wherein: the metal-insulator-semiconductor controllable short circuits are enhancement type structures.
Claim 7
Dependent Claim
30 words
The improved thyristor of claim 1, wherein: the metal-insulator-semiconductor controllable short circuits are divided into a first group of depletion type structures and a second group of enhancement type structures.
Claim 8
Dependent Claim
24 words
The improved thyristor of claim 1, wherein: a plurality of first emitters and metal-insulator-semiconductors are provided and the first emitters are elongate parallel structures.
Claim 9
Dependent Claim
23 words
The improved thyristor of claim 1, wherein: a plurality of first emitters and metal-insulator-semiconductors are provided and the first emitters are annular structures.
Claim 10
Dependent Claim
51 words
The improved thyristor of claim 8, wherein: the annular structures include which are radially aligned with one another; the conductive layer is provided as a plurality of conductive rings between and insulatingly overlapping adjacent first emitters; and radially extending electrical connections in the area of the openings connecting the conductive rings.
Claim 11
Dependent Claim
28 words
The improved thyristor of claim 1, and further comprising: a plurality of the first electrodes contacting respective first emitters; and a plate contacting each of said first electrodes.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-06-12 | 1987-12-12 | 1988-06-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-06-12 | 1991-12-12 | 1992-06-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-06-12 | 1995-12-12 | 1996-06-12 | $7700.00 | Window Closed / Lapsed |