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US4975754A
Expired / Lapsed
US
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Trench dual-gate MOSFET
Assignee: Toshiba Corp
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Filing: 1989-06-29
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Granted: 1990-12-04
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Expires: 2009-06-29
Abstract
Abstract A trench dual-gate MOSFET comprises a projection which is bent to enclose a predetermined region on a semiconductor substrate of a first conductivity type. This projection is defined by a trench formed by selectively removing the surface region of the semiconductor substrate. A gate insulation film is formed on the side wall of the projection and on the semiconductor substrate portion located around the base of the projection. A gate electrode is formed on the side wall of the projection and on the semiconductor substrate portion located around the base of the projection, with the gate insulation film interposed and in a manner to surround the projection. A first impurity region of a second conductivity type, which serves as either a source or drain region, is formed in the top portion of the projection. A second impurity region of the second conductivity, which serves as either a drain or source region, is formed in the surface region of that portion of the semiconductor substrate which is located around the base of the projection.
Inventors
- 👤 Hidemi Ishiuchi
- 👤 Toshiharu Watanabe
- 👤 Kinuyo Tanaka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 18:34
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/63; H10D30/611
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
167 words
A vertical MOSFET, comprising: a semiconductor substrate of a first conductivity type; a projection formed from and being on a surface of the semiconductor substrate and having at least one bent portion, said projection being defined by a trench formed by selectively removing a surface region of the semiconductor substrate; a gate insulation film formed both on a side wall of the projection and on a semiconductor substrate portion located around a base of the projection; a gate electrode formed both on the side wall of the projection and on the semiconductor substrate portion located around the base of the projection, said gate electrode being formed with the gate insulation film interposed and surrounding the projection; a first impurity diffusion region of a second conductivity type, which is formed in a top portion of the projection; and a second impurity diffusion region of the second conductivity type, which is formed in a surface region under the semiconductor substrate portion located around the base portion of the projection.
Claim 2
Dependent Claim
167 words
A vertical MOSFET, comprising: a semiconductor substrate of a first conductivity type; a projection formed from and being on a surface of the semiconductor substrate and having at least one bent portion, said projection being defined by a trench formed by selectively removing a surface region of the semiconductor substrate; a gate insulation film formed both on a side wall of the projection and on a semiconductor substrate portion located around a base of the projection; a gate electrode formed both on the side wall of the projection and on the semiconductor substrate portion located around the base of the projection, said gate electrode being formed with the gate insulation film interposed and surrounding the projection; a first impurity diffusion region of a second conductivity type, which is formed in a top portion of the projection; and a second impurity diffusion region of the second conductivity type, which is formed in a surface region under the semiconductor substrate portion located around the base portion of the projection.
Claim 3
Dependent Claim
25 words
A vertical MOSFET according to claim 1, wherein said projection has a horizontal pattern enclosing a predetermined region on the surface of the semiconductor substrate.
Claim 4
Dependent Claim
20 words
A vertical MOSFET according to claim 2, wherein an electrical connection to a wire is provided in said predetermined region.
Claim 5
Dependent Claim
60 words
A vertical MOSFET according to claim 1, wherein said projection has a horizontal pattern enclosing a predetermined region on the surface of the semiconductor substrate, and a portion of the second impurity diffusion region which is located inside the predetermined region and a portion of the second impurity diffusion region which is located outside the predetermined region are connected together.
Claim 6
Dependent Claim
62 words
A vertical MOSFET according to claim 1, wherein said projection has a horizontal pattern enclosing a predetermined region on the surface of the semiconductor substrate, and a portion of the second impurity diffusion region which is located inside the predetermined region and a portion of the second impurity diffusion region which is located outside the predetermined region are disconnected from each other.
Claim 7
Dependent Claim
19 words
A vertical MOSFET according to claim 1, wherein said projection has a horizontal pattern in the form of "S".
Claim 8
Dependent Claim
188 words
A vertical MOSFET, comprising: a semiconductor substrate of a first conductivity type; a projection formed from and being on a surface of the semiconductor substrate, said projection including a first section extending in a first direction, and a second section extending from the first section in a second direction different from the first direction, said projection being defined by a trench formed by selectively removing a surface region of the semiconductor substrate; a gate insulation film formed both on a side wall of the projection and on a semiconductor substrate portion located around a base of the projection; a gate electrode formed both on the side wall of the projection and on the semiconductor substrate portion located around the the base of the projection, said gate electrode being formed with the gate insulation film interposed and surrounding the projection; a first impurity diffusion region of a second conductivity type, which is formed in a top portion of the projection; and a second impurity diffusion of the second conductivity type, which is formed in a surface region under the semiconductor substrate portion located around the base of the projection.
Claim 9
Dependent Claim
188 words
A vertical MOSFET, comprising: a semiconductor substrate of a first conductivity type; a projection formed from and being on a surface of the semiconductor substrate, said projection including a first section extending in a first direction, and a second section extending from the first section in a second direction different from the first direction, said projection being defined by a trench formed by selectively removing a surface region of the semiconductor substrate; a gate insulation film formed both on a side wall of the projection and on a semiconductor substrate portion located around a base of the projection; a gate electrode formed both on the side wall of the projection and on the semiconductor substrate portion located around the the base of the projection, said gate electrode being formed with the gate insulation film interposed and surrounding the projection; a first impurity diffusion region of a second conductivity type, which is formed in a top portion of the projection; and a second impurity diffusion of the second conductivity type, which is formed in a surface region under the semiconductor substrate portion located around the base of the projection.
Claim 10
Dependent Claim
19 words
A vertical MOSFET according to claim 7, wherein said projection has a horizontal pattern in the form of "H".
References Cited (Backward Citations)
JPS58125873A
Cited
US4729966A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-12-03 | 1994-06-04 | 1994-12-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-12-03 | 1998-06-04 | 1998-12-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-12-03 | 2002-06-04 | 2002-12-04 | $7700.00 | Window Closed / Lapsed |