Patent US4970176A successfully refreshed from Google Patents.
US4970176A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Multiple step metallization process
Assignee: NXP USA Inc
•
Filing: 1989-09-29
•
Granted: 1990-11-13
•
Expires: 2009-09-29
Abstract
Abstract Metal step coverage is improved by utilizing a multiple step metallization process. In the first step, a thick portion of a metal layer is deposited on a semiconductor wafer at a cold temperature. The remaining amount of metal is deposited in a second step as the temperature is ramped up to allow for reflow of the metal layer through grain growth, recrystallization and bulk diffusion. The thick portion of the metal layer deposited at the cold temperature is of adequate thickness so that it remains continuous at the higher temperature and enhances via filling.
Inventors
- 👤 Clarence J. Tracy
- 👤 John L. Freeman, Jr.
- 👤 Robert L. Duffin
- 👤 Anthony Polito
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 02:06
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/059; Y; Y10; Y10S; Y10S148/00; Y10S148/025
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
93 words
An in situ metallization process, comprising the steps of: providing a semiconductor wafer having a via formed therein; forming a thick portion of a predetermined thickness of a metal layer on the semiconductor wafer at a cold temperature, and wherein the portion of the metal layer is of sufficient thickness to remain continuous in the via at a high temperature; and forming the remaining portion of the predetermined thickness of the metal layer on the semiconductor wafer while increasing the temperature to the high temperature which allows for reflow of the metal layer.
Claim 2
Dependent Claim
93 words
An in situ metallization process, comprising the steps of: providing a semiconductor wafer having a via formed therein; forming a thick portion of a predetermined thickness of a metal layer on the semiconductor wafer at a cold temperature, and wherein the portion of the metal layer is of sufficient thickness to remain continuous in the via at a high temperature; and forming the remaining portion of the predetermined thickness of the metal layer on the semiconductor wafer while increasing the temperature to the high temperature which allows for reflow of the metal layer.
Claim 3
Dependent Claim
30 words
The process of claim 1, wherein the thick portion of metal layer deposited at the cold temperature is approximately 50% to 75% of the predetermined thickness of the metal layer.
Claim 4
Dependent Claim
26 words
The process of claim 1, wherein the cold temperature is approximately less than 200° C. and the high temperature is approximately 400° C. to 500° C.
Claim 5
Dependent Claim
37 words
The process of claim 1 wherein the remaining portion of the predetermined thickness of the metal layer is formed at a slow rate, then by a fast rate to achieve the predetermined thickness of the metal layer.
Claim 6
Dependent Claim
112 words
An in situ metallization process, comprising the steps of: providing a semiconductor wafer having a via formed therein; depositing, by conventional means, a first thick portion of a predetermined thickness of a metal layer on the semiconductor wafer at a cold temperature of approximately less than 200° C., wherein the first thick portion is of a sufficient thickness to form a continuous metal layer in the via at a high temperature of approximately 400° C. to 500° C.; and increasing the temperature to the high temperature which allows for reflow of the metal layer, and depositing a second portion of the metal layer on the semiconductor wafer to achieve the predetermined thickness.
Claim 7
Dependent Claim
112 words
An in situ metallization process, comprising the steps of: providing a semiconductor wafer having a via formed therein; depositing, by conventional means, a first thick portion of a predetermined thickness of a metal layer on the semiconductor wafer at a cold temperature of approximately less than 200° C., wherein the first thick portion is of a sufficient thickness to form a continuous metal layer in the via at a high temperature of approximately 400° C. to 500° C.; and increasing the temperature to the high temperature which allows for reflow of the metal layer, and depositing a second portion of the metal layer on the semiconductor wafer to achieve the predetermined thickness.
Claim 8
Dependent Claim
27 words
The process of claim 5 wherein the first thick portion of the metal layer is approximately 50% to 75% of the predetermined thickness of the metal layer.
Claim 9
Dependent Claim
22 words
The process of claim 5 wherein depositing the first and second portions of the metal layer is done at a high rate.
Claim 10
Dependent Claim
13 words
The process of claim 5 wherein the metal layer is an aluminum alloy.
Claim 11
Dependent Claim
129 words
An in situ metallization process, comprising the steps of: providing a semiconductor wafer having a via formed therein; depositing a first thick portion of a metal layer on the semiconductor wafer at a cold temperature, wherein the first thick portion is of sufficient thickness for a continuous metal layer to remain in the via at a high temperature; depositing a second portion of the metal layer while the temperature is being increased to the high temperature which allows for reflow of the metal layer, and wherein the second portion is deposited at a slower rate than the first portion; and depositing a third portion of the metal layer at a faster rate than the second portion to complete the formation of a final predetermined thickness of the metal layer.
Claim 12
Dependent Claim
129 words
An in situ metallization process, comprising the steps of: providing a semiconductor wafer having a via formed therein; depositing a first thick portion of a metal layer on the semiconductor wafer at a cold temperature, wherein the first thick portion is of sufficient thickness for a continuous metal layer to remain in the via at a high temperature; depositing a second portion of the metal layer while the temperature is being increased to the high temperature which allows for reflow of the metal layer, and wherein the second portion is deposited at a slower rate than the first portion; and depositing a third portion of the metal layer at a faster rate than the second portion to complete the formation of a final predetermined thickness of the metal layer.
Claim 13
Dependent Claim
31 words
The process of claim 9 wherein the first portion of the metal layer is of a thickness of approximately 50 to 75% of the final predetermined thickness of the metal layer.
Claim 14
Dependent Claim
26 words
The process of claim 9, wherein the cold temperature is approximately less than 200° C. and the high temperature is approximately 400° C. to 500° C.
References Cited (Backward Citations)
JPS5997848A
Cited
JPS59119744A
Cited
JPS6189648A
Cited
US4818723A
Cited
US4874719A
Cited
JPS63136547A
Cited
US4897709A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-11-12 | 1994-05-14 | 1994-11-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-11-12 | 1998-05-14 | 1998-11-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-11-12 | 2002-05-14 | 2002-11-13 | $7700.00 | Window Closed / Lapsed |